公开(公告)号：WO2017192096A1

公开(公告)日：2017-11-09

申请号：PCT/SE2017/050430

申请日：2017-05-03

Applicant: SMOLTEK AB

Inventor： KABIR, M Shafiqul ,  JOHANSSON, Anders ,  DESMARIS, Vincent ,  AMIN SALEEM, Muhammad

IPC: H01L23/498 ,  H01L23/50

Abstract: An assembly platform for arrangement as an interposer device between an integrated circuit and a substrate to interconnect the integrated circuit and the substrate through the assembly platform, the assembly platform comprising: an assembly substrate; a plurality of conducting vias extending through the assembly substrate; at least one nanostructure connection bump on a first side of the assembly substrate, the nanostructure connection bump being conductively connected to the vias and defining connection locations for connection with at least one of the integrated circuit and the substrate, wherein each of the nanostructure connection bumps comprises: a plurality of elongated conductive nanostructures vertically grown on the first side of the assembly substrate, wherein the plurality of elongated nanostructures are embedded in a metal for the connection with at least one of the integrated circuit and the substrate, at least one connection bump on a second side of the assembly substrate, the second side being opposite to the first side, the connection bump being conductively connected to the vias and defining connection locations for connection with at least one of the integrated circuit and the substrate.

Abstract translation: 一种用于布置为集成电路和衬底之间的中介层设备以通过所述组装平台将所述集成电路和所述衬底互连的组装平台，所述组装平台包括：组装平台; 延伸穿过组装衬底的多个导电通孔; 在所述组件衬底的第一侧上的至少一个纳米结构连接凸点，所述纳米结构连接凸点导电地连接到所述通孔并且限定用于与所述集成电路和所述衬底中的至少一个连接的连接位置，其中，所述纳米结构连接凸点 包括：在所述组件衬底的所述第一侧上垂直生长的多个细长导电纳米结构，其中所述多个细长纳米结构嵌入金属中以用于与所述集成电路和所述衬底中的至少一个连接，至少一个连接凸块 在组装衬底的第二侧上，第二侧与第一侧相对，连接凸起导电地连接到通孔并且限定用于与集成电路和衬底中的至少一个连接的连接位置。

公开(公告)号：WO2017151040A1

公开(公告)日：2017-09-08

申请号：PCT/SE2017/050177

申请日：2017-02-24

Applicant: SMOLTEK AB

Inventor： KABIR, M Shafiqul ,  JOHANSSON, Anders ,  AMIN SALEEM, Muhammad ,  ENOKSSON, Peter ,  DESMARIS, Vincent ,  ANDERSSON, Rickard

IPC: H01L23/498 ,  H01G4/35 ,  H01L23/50

Abstract: An interposer device comprising an interposer substrate;a plurality of conducting vias extending through the interposer substrate;a conductor pattern on the interposer substrate, and a nanostructure energy storage device. The nanostructure energy storage device comprises at least a first plurality of conductive nanostructures formed on the interposer substrate;a conduction controlling material embedding each nanostructure in the first plurality of conductive nanostructures;a first electrode connected to each nanostructure in the first plurality of nanostructures; and a second electrode separated from each nanostructure in the first plurality of nanostructures by the conduction controlling material,wherein the first electrode and the second electrode are configured to allow electrical connection of the nanostructure energy storage device to the integrated circuit.

Abstract translation: 一种中介层装置，包括中介层基板;延伸穿过中介层基板的多个导电过孔;中介层基板上的导体图案以及纳米结构能量存储装置。 所述纳米结构能量存储装置包括至少第一多个导电纳米结构，所述第一多个导电纳米结构形成在所述中介层基底上;导电控制材料，将每个纳米结构嵌入所述第一多个导电纳米结构中;第一电极，连接到所述第一多个纳米结构中的每个纳米结构; 以及通过所述传导控制材料与所述第一多个纳米结构中的每个纳米结构分离的第二电极，其中所述第一电极和所述第二电极被配置为允许所述纳米结构能量存储装置与所述集成电路电连接。