公开(公告)号：WO2023280619A1

公开(公告)日：2023-01-12

申请号：PCT/EP2022/067600

申请日：2022-06-27

Applicant: SMOLTEK AB

Inventor： ANDERSSON, Rickard ,  BYLUND, Maria ,  DESMARIS, Vincent ,  LI, Qi ,  MARKNÄS, Victor ,  PASSALACQUA, Elisa ,  SALEEM, Muhammad Amin ,  WENGER, Fabian ,  ZARE, Simin

IPC: H01M8/0234 ,  H01M8/0245 ,  H01M8/1004 ,  H01M8/0232 ,  H01M8/10

Abstract: A separator element arrangement (300) for an electrochemical cell is presented. The separator element arrangement comprises a separator element (310) and a diffusion layer (320) arranged adjacent to the separator element (310). The separator element comprises a plurality of elongated nanostructures (311). At least some of the elongated nanostructures are arranged to connect the separator element (310) to the diffusion layer (320) by extending into the diffusion layer.

公开(公告)号：WO2017151040A1

公开(公告)日：2017-09-08

申请号：PCT/SE2017/050177

申请日：2017-02-24

Applicant: SMOLTEK AB

Inventor： KABIR, M Shafiqul ,  JOHANSSON, Anders ,  AMIN SALEEM, Muhammad ,  ENOKSSON, Peter ,  DESMARIS, Vincent ,  ANDERSSON, Rickard

IPC: H01L23/498 ,  H01G4/35 ,  H01L23/50

Abstract: An interposer device comprising an interposer substrate;a plurality of conducting vias extending through the interposer substrate;a conductor pattern on the interposer substrate, and a nanostructure energy storage device. The nanostructure energy storage device comprises at least a first plurality of conductive nanostructures formed on the interposer substrate;a conduction controlling material embedding each nanostructure in the first plurality of conductive nanostructures;a first electrode connected to each nanostructure in the first plurality of nanostructures; and a second electrode separated from each nanostructure in the first plurality of nanostructures by the conduction controlling material,wherein the first electrode and the second electrode are configured to allow electrical connection of the nanostructure energy storage device to the integrated circuit.

Abstract translation: 一种中介层装置，包括中介层基板;延伸穿过中介层基板的多个导电过孔;中介层基板上的导体图案以及纳米结构能量存储装置。 所述纳米结构能量存储装置包括至少第一多个导电纳米结构，所述第一多个导电纳米结构形成在所述中介层基底上;导电控制材料，将每个纳米结构嵌入所述第一多个导电纳米结构中;第一电极，连接到所述第一多个纳米结构中的每个纳米结构; 以及通过所述传导控制材料与所述第一多个纳米结构中的每个纳米结构分离的第二电极，其中所述第一电极和所述第二电极被配置为允许所述纳米结构能量存储装置与所述集成电路电连接。

公开(公告)号：WO2021262067A1

公开(公告)日：2021-12-30

申请号：PCT/SE2021/050582

申请日：2021-06-15

Applicant: SMOLTEK AB

Inventor： KABIR, M Shafiqul ,  DESMARIS, Vincent ,  JOHANSSON, Anders ,  TIVERMAN, Ola ,  LUNDAHL, Karl ,  ANDERSSON, Rickard ,  SALEEM, Muhammad Amin ,  BYLUND, Maria ,  MARKNÄS, Victor

IPC: H01L27/146 ,  H01L21/78 ,  H01L27/14609 ,  H01L27/14634

Abstract: An image sensor comprising an image sensor layer having a plurality of image sensor layer contact pads; and a plurality of photo-sensitive elements, each being coupled to a respective image sensor layer contact pad; and a capacitor layer having: a plurality of first capacitor contact structures, each being constituted by a capacitor layer top contact pad bonded to a respective image sensor layer contact pad of the image sensor layer; a plurality of second capacitor contact structures; and a plurality of capacitors, embedded in a first dielectric material, each capacitor including at least one electrically conductive vertical nanostructure electrically conductively connected to one of a respective first capacitor contact structure and a respective second capacitor contact structure, and conductively separated from the other one of the respective first capacitor contact structure and the respective second capacitor contact structure by a layer of a second dielectric material.

公开(公告)号：WO2021158158A1

公开(公告)日：2021-08-12

申请号：PCT/SE2021/050053

申请日：2021-01-28

Applicant: SMOLTEK AB

Inventor： KABIR, M Shafiqul ,  DESMARIS, Vincent ,  JOHANSSON, Anders ,  TIVERMAN, Ola ,  LUNDAHL, Karl ,  ANDERSSON, Rickard ,  SALEEM, Muhammad Amin ,  BYLUND, Maria ,  MARKNÄS, Victor

IPC: H01L23/522 ,  H01G4/008 ,  H01G4/06 ,  H01L27/02 ,  H05K1/18 ,  B82B1/00 ,  B82Y40/00 ,  H03K19/003

Abstract: An electronic system comprising a substrate with a substrate conductor pattern including substrate pads; a semiconductor component with active circuitry, and component pads coupled to the active circuitry of the semiconductor component and connected to the substrate pads of the substrate; a power source interface for receiving power from a power source; and a power distribution network for distributing power from the power source interface to the active circuitry of the semiconductor component. The power distribution network includes a first capacitor realized by conductive structures comprised in the semiconductor component, the first capacitor being coupled to a first component pad and a second component pad of the semiconductor component; a second capacitor arranged between the substrate and the semiconductor component, the second capacitor being coupled to the first component pad and the second component pad of the component package; and a power grid portion of the substrate conductor pattern.

公开(公告)号：WO2020080993A1

公开(公告)日：2020-04-23

申请号：PCT/SE2019/050975

申请日：2019-10-07

Applicant: SMOLTEK AB

Inventor： DESMARIS, Vincent ,  ANDERSSON, Rickard ,  SALEEM, Muhammad Amin ,  BYLUND, Maria ,  JOHANSSON, Anders ,  LILJEBERG, Fredrik ,  TIVERMAN, Ola ,  KABIR, M Shafiqul

IPC: H01G4/008 ,  H01G4/06 ,  H01G11/04 ,  H01G11/36 ,  H01L27/02 ,  H05K1/18 ,  B82B1/00 ,  B82Y40/00 ,  B82Y10/00 ,  H01G11/56 ,  H01L28/65 ,  H05K1/181

Abstract: A discrete metal-insulator-metal (MIM) energy storage component, the energy storage component comprising: a MIM-arrangement comprising: a first electrode layer; a plurality of conductive nanostructures grown from the first electrode layer; a conduction controlling material covering each nanostructure in the plurality of conductive nanostructures and the first electrode layer uncovered by the conductive nanostructures; and a second electrode layer covering the conduction controlling material;a first connecting structure for external electrical connection of the capacitor component;a second connecting structure for external electrical connection of the capacitor component; and an electrically insulating encapsulation material at least partly embedding the MIM-arrangement.

公开(公告)号：WO2019045619A1

公开(公告)日：2019-03-07

申请号：PCT/SE2018/050848

申请日：2018-08-23

Applicant: SMOLTEK AB

Inventor： KABIR, M Shafiqul ,  JOHANSSON, Anders ,  SALEM, Muhammad Amin ,  ANDERSSON, Rickard ,  DESMARIS, Vincent

IPC: H01L23/498 ,  H01L23/50 ,  H01G4/35

Abstract: An interposer device comprising a first conductor pattern on a first side defining a portion of the interposer device to be covered by a first electrical circuit element; and a second conductor pattern on a second side to be connected to a second electrical circuit element. The second conductor pattern is electrically coupled to the first conductor pattern. The interposer device further comprises a plurality of nanostructure energy storage devices arranged within the portion of the interposer device to be covered by the first electrical circuit element. Each of the nanostructure energy storage devices comprises at least a first plurality of conductive nanostructures;a conduction controlling material embedding the nanostructures;a first electrode connected to each nanostructure in the first plurality of nanostructures; and a second electrode separated from each nanostructure in the first plurality of nanostructures by the conduction controlling material.

公开(公告)号：WO2021211038A1

公开(公告)日：2021-10-21

申请号：PCT/SE2021/050335

申请日：2021-04-13

Applicant: SMOLTEK AB

Inventor： KABIR, M Shafiqul ,  DESMARIS, Vincent ,  JOHANSSON, Anders ,  TIVERMAN, Ola ,  LUNDAHL, Karl ,  ANDERSSON, Rickard ,  SALEEM, Muhammad Amin ,  BYLUND, Maria ,  MARKNÄS, Victor

IPC: H01G4/005 ,  H01G4/06 ,  H01G4/30 ,  H01L27/02 ,  H05K1/18 ,  B82B1/00 ,  B82Y40/00

Abstract: A MIM energy storage device comprising a bottom electrode; a plurality of electrically conductive vertical nanostructures; a bottom conduction- controlling layer conformally coating each nanostructure in the plurality of electrically conductive vertical nanostructures; and a layered stack of alternating conduction-controlling layers and electrode layers conformally coating the bottom conduction-controlling layer, the layered stack including at least a first odd-numbered electrode layer at a bottom of the layered stack, a first odd-numbered conduction-controlling layer directly on the first odd- numbered electrode layer, and a first even-numbered electrode layer directly on the first odd-numbered conduction-controlling layer. Each even-numbered electrode layer in the layered stack is electrically conductively connected to the bottom electrode; and each odd-numbered electrode layer in the layered stack is electrically conductively connected to any other odd-numbered electrode layer in the layered stack.

公开(公告)号：WO2020112005A1

公开(公告)日：2020-06-04

申请号：PCT/SE2019/051176

申请日：2019-11-20

Applicant: SMOLTEK AB

Inventor： KABIR, M Shafiqul ,  DESMARIS, Vincent ,  ANDERSSON, Rickard ,  SALEEM, Muhammad Amin ,  BYLUND, Maria ,  JOHANSSON, Anders ,  LILJEBERG, Fredrik ,  TIVERMAN, Ola

IPC: H01G4/008 ,  H01G4/06 ,  H01L23/498 ,  H01L23/538 ,  H01L23/64 ,  H01L27/02 ,  H05K1/18 ,  B82B1/00 ,  B82Y40/00 ,  H01L25/11

Abstract: A semiconductor assembly, comprising: a first semiconductor die including processing circuitry and pads, said first semiconductor die having a first surface and a second surface opposite the first surface; a second semiconductor die including memory circuitry and pads, said second semiconductor die being arranged on one of the first surface and the second surface of said first semiconductor die, and pads of said second semiconductor die being coupled to pads of said first semiconductor die; and at least a first capacitor having terminals, said first capacitor being arranged on one of the first surface and the second surface of said first semiconductor die and the terminals of said capacitor being coupled to pads of said first semiconductor die.