公开(公告)号：WO2008019362A3

公开(公告)日：2008-10-16

申请号：PCT/US2007075344

申请日：2007-08-07

Applicant: SOKUDO CO LTD ,  MICHAELSON TIM ,  BEKIARIS NIKOLAOS

Inventor： MICHAELSON TIM ,  BEKIARIS NIKOLAOS

IPC: H01L21/00 ,  G01R31/26 ,  G06F19/00 ,  H01L21/66 ,  H05B3/68

CPC classification number: H01L22/20 ,  H01L22/12

Abstract: A method of controlling wafer critical dimension (CD) uniformity on a track lithography tool includes obtaining a CD map for a wafer (432) The CD map includes a plurality of CD data points correlated with a multi-zone heater geometry map (434) The multi-zone heater includes a plurality of heater zones The method also includes determining a CD value for a first heater zone of the plurality of heater zones based on one or more of the CD data points and computing a difference between the determined CD value for the first heater zone and a target CD value for the first heater zone (438) The method further includes determining a temperature variation for the first heater zone based, in part, on the computed difference and a temperature sensitivity of a photoresist deposited on the wafer an modifying a temperature of the first heater zone based, in part, on the temperature variation (440)

Abstract translation: 控制轨道光刻工具上的晶片临界尺寸（CD）均匀性的方法包括获得晶片的CD映射（432）.CD图包括与多区加热器几何图相关的多个CD数据点。 多区加热器包括多个加热器区域。该方法还包括基于一个或多个CD数据点确定多个加热器区域中的第一加热器区域的CD值，并计算所确定的CD值 第一加热器区域和用于第一加热器区域（438）的目标CD值。该方法还包括部分地基于计算出的差异和沉积在晶片上的光致抗蚀剂的温度敏感度来确定第一加热器区域的温度变化 部分地基于温度变化（440）改变第一加热器区域的温度，