Abstract:
A solid-state imaging device includes a photoelectric conversion section configured to generate photocharges and a transfer gate that transfers the photocharges to a semiconductor region. A method for driving a unit pixel includes a step of accumulating photocharges in a photoelectric conversion section and a step of accumulating the photocharges in a semiconductor region. A method of forming a solid-state imaging device includes implanting ions into a well layer through an opening in a mask, implanting additional ions into the well layer through an opening in another mask, and implanting other ions into the well layer through an opening in yet another mask. An electronic device includes the solid-state imaging device.
Abstract:
An imaging device includes a pixel region in which light sensing pixels are grouped into pixel-units that each include multiple pixels, each column including pixels from at least two of the pixel-units. Each of the pixel-units is connected, via a corresponding readout line, to a corresponding readout unit configured to perform analog-to-digital conversion on pixel signals output thereto. A scanning unit that extends in a column direction is configured to select pixels for readout by applying row scanning pulses to scan lines connected to rows. A scanning unit that extends in a row direction for applying readout-enabling scan pulses to lines connected to columns is omitted. Those pixels that are selected for readout by one of the row scanning pulses are read out independently of any enabling pulses applied to lines connected to columns.
Abstract:
A solid-state imaging device comprises a plurality of pixel blocks arranged in a matrix, each of the pixel blocks including a plurality of pixels that generate a charge in response to input light; a control unit including a vertical scanning unit and a horizontal scanning unit; and a plurality of analog-to-digital converters, each of the analog-to-digital converters disposed corresponding to pixel blocks. The control unit is configured to sequentially scan the pixels at a timing so that adjacent pixels which are located on a boundary of adjacent pixel blocks are scanned simultaneously.
Abstract:
There is provided an imaging device that includes photovoltaic type pixels that have photoelectric conversion regions generating photovoltaic power for each pixel depending on irradiation light; and an element isolation region that is provided between the photoelectric conversion regions of adjacent pixels and in a state of substantially surrounding the photoelectric conversion region.
Abstract:
A solid-state imaging device and method of making a solid-state imaging device are described herein. By way of example, the solid-state imaging device includes a first wiring layer formed on a sensor substrate and a second wiring layer formed on a circuit substrate. The sensor substrate is coupled to the circuit substrate, the first wiring layer and the second wiring layer being positioned between the sensor substrate and the circuit substrate. A first electrode is formed on a surface of the first wiring layer, and a second electrode is formed on a surface of the second wiring layer. The first electrode is in electrical contact with the second electrode.
Abstract:
A solid state imaging element including a drive circuit and a pixel unit with pixels arranged in a matrix form. The pixels include a photoelectric conversion element configured to convert light incident thereupon into a charge and to accumulate the charge, a charge holding unit connected to the photoelectric conversion element, and a floating diffusion region. The drive circuit transfers a first portion of the charge accumulated in the photoelectric conversion element to the charge holding unit and concurrently transfers a second portion of the charge accumulated in the photoelectric conversion element to the floating diffusion region. Electronic global shutter is realized by transferring charge from the photoelectric conversion elements of each of the pixels at substantially the same time.