公开(公告)号：WO2014190165A2

公开(公告)日：2014-11-27

申请号：PCT/US2014/039164

申请日：2014-05-22

Applicant: SUNEDISON SEMICONDUCTOR LIMITED ,  BASAK, Soubir

Inventor： BASAK, Soubir ,  HUDSON, Carissima M. ,  SAMANTA, Gaurab ,  RYU, Jae Woo ,  SREEDHARAMURTHY, Hariprasad ,  MCCALLUM, Kirk D. ,  LEE, HyungMin

IPC: C30B15/30

CPC classification number: C30B15/20 ,  C30B15/04 ,  C30B15/30 ,  C30B15/305 ,  C30B29/06 ,  C30B30/04 ,  H01L29/165 ,  H01L29/167 ,  H01L29/7393

Abstract: An method for producing a silicon ingot includes melting polycrystalline silicon in a crucible enclosed in a vacuum chamber to form a melt, generating a cusped magnetic field within the vacuum chamber, dipping a seed crystal into the melt, withdrawing the seed crystal from the melt to pull a single crystal that forms the silicon ingot, wherein the silicon ingot has a diameter greater than about 150 millimeters (mm), and simultaneously regulating a plurality of process parameters such that the silicon ingot has an oxygen concentration less than about 5 parts per million atoms (ppma). The plurality of process parameters include a wall temperature of the crucible, a transport of silicon monoxide (SiO) from the crucible to the single crystal, and an evaporation rate of SiO from the melt.

Abstract translation: 一种生产硅锭的方法包括将包围在真空室中的坩埚中的多晶硅熔化以形成熔体，在真空室内产生一个切割的磁场，将晶种浸入熔体中，将晶种从熔体中取出， 拉出形成硅锭的单晶，其中硅锭的直径大于约150毫米（mm），同时调节多个工艺参数，使得硅锭的氧浓度小于约百万分之五 原子（ppma）。 多个工艺参数包括坩埚的壁温，从坩埚向单晶输送一氧化硅（SiO）和从熔体中的SiO的蒸发速率。

公开(公告)号：WO2018125958A1

公开(公告)日：2018-07-05

申请号：PCT/US2017/068632

申请日：2017-12-28

Applicant: SUNEDISON SEMICONDUCTOR LIMITED

Inventor： DAGGOLU, Parthiv ,  GITLIN, Eric ,  STANDLEY, Robert ,  LEE, HyungMin ,  ZHANG, Nan ,  RYU, Jae-Woo ,  BASAK, Soubir ,  PHILLIPS, Richard J.

IPC: C30B15/04 ,  C30B29/06

Abstract: Methods for forming single crystal silicon ingots with improved resistivity control and, in particular, methods that involve gallium or indium doping are disclosed. In some embodiments, the ingots are characterized by a relatively high resistivity.

公开(公告)号：WO2017214084A1

公开(公告)日：2017-12-14

申请号：PCT/US2017/036061

申请日：2017-06-06

Applicant: SUNEDISON SEMICONDUCTOR LIMITED ,  BASAK, Soubir

Inventor： BASAK, Soubir ,  PEIDOUS, Igor ,  HUDSON, Carissima Marie ,  LEE, HyungMin ,  KIM, ByungChun ,  FALSTER, Robert J.

IPC: C30B29/06 ,  C30B15/30

Abstract: A method for preparing a single crystal silicon ingot and a wafer sliced therefrom are provided. The ingots and wafers comprise nitrogen at a concentration of at least about 1x1014 atoms/cm3 and/or germanium at a concentration of at least about 1x1019 atoms/cm3, interstitial oxygen at a concentration of less than about 6 ppma, and a resistivity of at least about 1000 ohm cm.

Abstract translation: 提供了用于制备单晶硅锭和从中切割的晶片的方法。 晶锭和晶片包含浓度至少约1×10 14原子/ cm 3的氮和/或浓度至少约1×10 19原子/ cm 3的锗，浓度低于约6ppma的间隙氧，电阻率为 至少约1000欧姆厘米。