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    METHODS FOR PRODUCING LOW OXYGEN SILICON INGOTS
    1.
    发明申请
    METHODS FOR PRODUCING LOW OXYGEN SILICON INGOTS 审中-公开
    生产低氧含硅金属的方法

    公开(公告)号：WO2014190165A2

    公开(公告)日：2014-11-27

    申请号：PCT/US2014/039164

    申请日：2014-05-22

    Applicant: SUNEDISON SEMICONDUCTOR LIMITED ,  BASAK, Soubir

    Inventor： BASAK, Soubir ,  HUDSON, Carissima M. ,  SAMANTA, Gaurab ,  RYU, Jae Woo ,  SREEDHARAMURTHY, Hariprasad ,  MCCALLUM, Kirk D. ,  LEE, HyungMin

    IPC: C30B15/30

    CPC classification number: C30B15/20 ,  C30B15/04 ,  C30B15/30 ,  C30B15/305 ,  C30B29/06 ,  C30B30/04 ,  H01L29/165 ,  H01L29/167 ,  H01L29/7393

    Abstract: An method for producing a silicon ingot includes melting polycrystalline silicon in a crucible enclosed in a vacuum chamber to form a melt, generating a cusped magnetic field within the vacuum chamber, dipping a seed crystal into the melt, withdrawing the seed crystal from the melt to pull a single crystal that forms the silicon ingot, wherein the silicon ingot has a diameter greater than about 150 millimeters (mm), and simultaneously regulating a plurality of process parameters such that the silicon ingot has an oxygen concentration less than about 5 parts per million atoms (ppma). The plurality of process parameters include a wall temperature of the crucible, a transport of silicon monoxide (SiO) from the crucible to the single crystal, and an evaporation rate of SiO from the melt.

    Abstract translation: 一种生产硅锭的方法包括将包围在真空室中的坩埚中的多晶硅熔化以形成熔体，在真空室内产生一个切割的磁场，将晶种浸入熔体中，将晶种从熔体中取出， 拉出形成硅锭的单晶，其中硅锭的直径大于约150毫米（mm），同时调节多个工艺参数，使得硅锭的氧浓度小于约百万分之五 原子（ppma）。 多个工艺参数包括坩埚的壁温，从坩埚向单晶输送一氧化硅（SiO）和从熔体中的SiO的蒸发速率。

    SYSTEMS AND METHODS FOR PRODUCTION OF LOW OXYGEN CONTENT SILICON
    3.
    发明申请
    SYSTEMS AND METHODS FOR PRODUCTION OF LOW OXYGEN CONTENT SILICON 审中-公开
    用于生产低含氧量硅的系统和方法

    公开(公告)号：WO2017096057A1

    公开(公告)日：2017-06-08

    申请号：PCT/US2016/064448

    申请日：2016-12-01

    Applicant: SUNEDISON SEMICONDUCTOR LIMITED ,  SAMANTA, Gaurab

    Inventor： SAMANTA, Gaurab ,  DAGGOLU, Parthiv ,  BHAGAVAT, Sumeet ,  BASAK, Soubir ,  ZHANG, Nan

    IPC: C30B15/20 ,  C30B29/06 ,  C30B15/30

    CPC classification number: C30B15/20 ,  C30B15/305 ,  C30B29/06

    Abstract: A method for producing a silicon ingot includes withdrawing a seed crystal from a melt that includes melted silicon in a crucible that is enclosed in a vacuum chamber containing a cusped magnetic field. At least one process parameter is regulated in at least two stages, including a first stage corresponding to formation of the silicon ingot up to an intermediate ingot length, and a second stage corresponding to formation of the silicon ingot from the intermediate ingot length to the total ingot length. During the second stage process parameter regulation may include reducing a crystal rotation rate, reducing a crucible rotation rate, and/or increasing a magnetic field strength relative to the first stage.

    Abstract translation: 用于制造硅锭的方法包括从包含熔化的硅的熔体中取出晶种，所述熔化的硅在封闭在包含会切磁场的真空室中的坩埚中。 在至少两个阶段中调节至少一个工艺参数，包括对应于形成直至中间锭长度的硅锭的第一阶段和对应于从中间锭长度到总长度形成硅锭的第二阶段 锭长度。 在第二阶段过程中，参数调节可包括降低晶体旋转速率，降低坩埚旋转速率和/或相对于第一阶段增加磁场强度。

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