公开(公告)号：WO1993002979A1

公开(公告)日：1993-02-18

申请号：PCT/JP1992001015

申请日：1992-08-07

Applicant: TDK CORPORATION

Inventor： TDK CORPORATION ,  KAWAMURA, Keizou ,  KOBAYASHI, Makoto

IPC: C03C08/14

CPC classification number: C03C8/14 ,  C03C4/16 ,  C03C8/20 ,  H01B3/085 ,  H05K1/0306

Abstract: A dielectric material for high frequencies, wherein a glass, an oxide aggregate having a dielectric constant whose temperature coefficient τε is positive, and an oxide aggregate having a dielectric constant whose temperature coefficient τε is negative are used, these are blended in a predetermined volumetric ratio, the temperature coefficient τε of high frequency dielectric material is about -12 ppm/°C. Thereby the temperature coefficient τf of the resonance frequency of the high-frequency resonator made of the dielectric material is about zero.

公开(公告)号：WO1993008672A1

公开(公告)日：1993-04-29

申请号：PCT/JP1992000619

申请日：1992-05-14

Applicant: TDK CORPORATION

Inventor： TDK CORPORATION ,  KAWAMURA, Keizou ,  KOBAYASHI, Makoto ,  NAKAMURA, Akira ,  YASUDA, Norikazu ,  KONDOH, Suguru ,  MIURA, Taro ,  NAKAI, Shinya ,  FUJII, Tadao

IPC: H05K03/46

CPC classification number: B32B18/00 ,  C04B37/003 ,  C04B2237/10 ,  C04B2237/124 ,  C04B2237/125 ,  C04B2237/126 ,  C04B2237/34 ,  C04B2237/341 ,  C04B2237/343 ,  C04B2237/346 ,  C04B2237/348 ,  C04B2237/62 ,  C04B2237/68 ,  C04B2237/704 ,  H01G4/30 ,  H01L21/4857 ,  H01L21/4867 ,  H01L23/49805 ,  H01L23/49883 ,  H01L23/5383 ,  H01L23/5384 ,  H01L2924/0002 ,  H01L2924/09701 ,  H01L2924/19105 ,  H05K1/0306 ,  H05K1/092 ,  H05K3/403 ,  H05K3/46 ,  H05K3/4629 ,  H05K2203/128 ,  H01L2924/00

Abstract: A multilayer ceramic part in which its inner conductor is compacted, and the loss of a line is reduced, the performance such as the Q value is improved, and the variation of the performance is reduced. The paste of the inner conductor is made of powder of conductor, preferably silver or copper, and a glass frit, if necessary. The layers of the paste of the inner conductor and dielectric ceramic material layers are stacked and are baked simultaneously at a temperature higher than the melting point of the conductor.