公开(公告)号：WO2014062483A1

公开(公告)日：2014-04-24

申请号：PCT/US2013/064440

申请日：2013-10-11

Applicant: THE UNIVERSITY OF UTAH RESEARCH FOUNDATION

Inventor： KHAN, Faisal ,  NASRIN, Most, S. ,  ALAM, Mohammed, Khorshed

IPC: G01R31/3183 ,  G01R31/3181 ,  G01R31/40

CPC classification number: G01R31/40 ,  G01R31/007 ,  G01R31/06 ,  G01R31/2608 ,  G01R31/2621 ,  G01R31/2839 ,  G01R31/2843 ,  G01R31/327 ,  H02S50/10

Abstract: Systems, methods and devices which utilize Spread Spectrum Time Domain Reflectometry (SSTDR) techniques to measure degradation of electronic components are provided. Such measurements may be implemented while the components "live" or otherwise functioning within an overall system. In one embodiment, monitoring a power converter in a high power system is accomplished. In this embodiment, degradation of components within the power converter (e.g. metal-oxide-semiconductor field-effect transistors (MOSFETs), capacitors, insulated-gate bipolar transistors (IGBTs), and the like) may be monitored by processing data from reflections of an SSTDR signal to determine changes in impedance, capacitance, or any other changes that may be characteristic of components degrading. For example, an aging MOSFET may experience an increase of drain to source resistance which adds additional resistance to a current path within a power converter. Such a change is able to be analyzed monitored upon processing the reflected test signals.

Abstract translation: 提供了利用扩展时域反射计（SSTDR）技术测量电子元件退化的系统，方法和设备。 这些测量可以在组件“活”或在整个系统内以其他方式运行的情况下实现。 在一个实施例中，实现了监控大功率系统中的功率转换器。 在本实施例中，可以通过处理来自反射的数据来监视功率转换器内的部件（例如金属氧化物半导体场效应晶体管（MOSFET），电容器，绝缘栅双极晶体管（IGBT）等）的劣化 一个SSTDR信号，用于确定阻抗，电容或任何其他可能成分劣化的特征的变化。 例如，老化的MOSFET可能会遇到漏极到源极电阻的增加，这增加了功率转换器内的电流路径的附加电阻。 在处理反射的测试信号时，能够对这种变化进行分析。