公开(公告)号：WO2019070545A1

公开(公告)日：2019-04-11

申请号：PCT/US2018/053675

申请日：2018-10-01

Applicant: TOKYO ELECTRON LIMITED ,  TOKYO ELECTRON U.S. HOLDINGS, INC.

Inventor： YU, Kai-Hung ,  JOY, Nicholas ,  LIU, Eric ,  O'MEARA, David ,  ROSENTHAL, David ,  IGETA, Masanobu ,  WAJDA, Cory ,  LEUSINK, Gerrit

IPC: H01L21/768 ,  H01L21/28 ,  H01L21/285 ,  H01L21/3065 ,  H01L21/02 ,  H01L21/324

Abstract: A method is provided for void-free Ru metal filling of features in a substrate. The method includes providing a substrate containing features, depositing a Ru metal layer in the features, removing the Ru metal layer from a field area around an opening of the features, and depositing additional Ru metal in the features, where the additional Ru metal is deposited in the features at a higher rate than on the field area. According to one embodiment, the additional Ru metal is deposited until the features are fully filled with Ru metal.