FEMTOSECOND LASER-INDUCED FORMATION OF SINGLE CRYSTAL PATTERNED SEMICONDUCTOR SURFACE
    1.
    发明申请
    FEMTOSECOND LASER-INDUCED FORMATION OF SINGLE CRYSTAL PATTERNED SEMICONDUCTOR SURFACE 审中-公开
    FEMTOSECOND激光诱导单晶图形化半导体表面的形成

    公开(公告)号:WO2017053198A3

    公开(公告)日:2017-05-04

    申请号:PCT/US2016052212

    申请日:2016-09-16

    Abstract: The interaction between multiple intense ultrashort laser pulses and solids typically produces a regular nanoscale surface corrugation. A coupled mechanism has been identified that operates in a specific range of fluences in GaAs that exhibits transient loss of the imaginary part of the dielectric function and X2, which produces a unique corrugation known as high spatial frequency laser induced periodic surface structures (HSFL). This mechanism is unique in that the corrugation does not involve melting or ablation.

    Abstract translation: 多次强烈的超短激光脉冲与固体之间的相互作用通常产生规则的纳米级表面波纹。 已经确定了耦合机制,其在GaAs中的特定范围的能量中展现介电函数的虚部和X2,其产生被称为高空间频率激光诱导的周期表面结构(HSFL)的独特波纹的瞬态损失。 这种机制是独特的,因为波纹不涉及熔化或消融。

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