公开(公告)号：WO2017030666A3

公开(公告)日：2017-05-26

申请号：PCT/US2016040781

申请日：2016-07-01

Applicant: UNIV MICHIGAN REGENTS

Inventor： NAJAFI KHALIL ,  TANG YEMIN

IPC: B81B3/00 ,  B81C1/00 ,  H01L27/04

CPC classification number: H04R19/00 ,  H04R17/00 ,  H04R31/00 ,  H04R2201/003

Abstract: Techniques are presented for fabricating transducers and other types of microstructures having high aspect ratios. To achieve high aspect ratios, wafers are etched from both sides for example using deep reactive ion etching. The three-dimensional structure is designed to have an overall footprint less than four hundred micrometers with a thickness on the order of 0.5-2 millimeters as compared to conventional planar devices.

Abstract translation: 提出了用于制造具有高纵横比的换能器和其他类型的微结构的技术。 为了实现高纵横比，例如使用深反应离子蚀刻从两侧蚀刻晶片。 与常规平面器件相比，三维结构被设计为具有小于四百微米的整体占地面积，厚度为0.5-2毫米。