公开(公告)号：WO2015187389A3

公开(公告)日：2016-03-17

申请号：PCT/US2015032177

申请日：2015-05-22

Applicant: UNIV MICHIGAN STATE

Inventor： ASMUSSEN JES ,  LU JING ,  GU YAJUN ,  NAD SHREYA

IPC: C23C16/27 ,  C23C16/511

CPC classification number: C23C16/511 ,  C23C16/274 ,  C23C16/52 ,  H01J37/32192 ,  H01J37/32256 ,  H01J37/32926 ,  H01J2237/3321

Abstract: The disclosure relates to microwave cavity plasma reactor (MCPR) apparatus and associated tuning and process control methods that enable the microwave plasma assisted chemical vapor deposition (MPACVD) of a component such as diamond. Related methods enable the control of the microwave discharge position, size and shape, and enable efficient matching of the incident microwave power into the reactor prior to and during component deposition. Pre-deposition tuning processes provide a well matched reactor exhibiting a high plasma reactor coupling efficiency over a wide range of operating conditions, thus allowing operational input parameters to be modified during deposition while simultaneously maintaining the reactor in a well-matched state. Additional processes are directed to realtime process control during deposition, in particular based on identified independent process variables which can effectively control desired dependent process variables during deposition while still maintaining a well-matched power coupling reactor state.

Abstract translation: 本公开涉及使微波等离子体辅助化学气相沉积（MPACVD）等元件如金刚石的微波空腔等离子体反应器（MCPR）装置和相关的调谐和过程控制方法。 相关方法能够控制微波放电位置，尺寸和形状，并且能够在组件沉积之前和期间有效地将入射的微波功率匹配到反应器中。 预沉积调谐过程提供了良好匹配的反应器，其在宽范围的操作条件下表现出高等离子体反应器耦合效率，从而允许在沉积期间修改操作输入参数，同时将反应器维持在良好匹配的状态。 额外的过程涉及沉积期间的实时过程控制，特别是基于所确定的独立过程变量，其可以在沉积期间有效地控制期望的依赖过程变量，同时仍保持良好匹配的功率耦合反应器状态。