公开(公告)号：WO2017032754A1

公开(公告)日：2017-03-02

申请号：PCT/EP2016/069840

申请日：2016-08-22

Applicant: UNIVERSITEIT GENT ,  IMEC VZW

Inventor： BAETS, Roeland ,  ROELKENS, Günther ,  DE GROOTE, Andreas ,  CARDILE, Paolo ,  SUBRAMANIAN, Ananth

IPC: H01S5/026 ,  H01L33/00 ,  H01L33/20 ,  H01L33/58

CPC classification number: H01S5/026 ,  H01L33/0045 ,  H01L33/0079 ,  H01L33/30 ,  H01L33/58

Abstract: The present invention relates to an on-chip broadband radiation source, and methods for its manufacture. The photonics IC comprises an optical waveguide such as a semiconductor waveguide, a thin III-V material membrane with absorption capability for absorbing an optical pump signal induced in the waveguide. The III-V membrane comprises a LED implemented therein. The photonics IC also comprises a coupling means between the waveguide and the membrane. The device provides a broadband radiation source at a wavelength longer than the wavelength of the transferred radiation. The broadband signal can then be coupled out through the waveguide and used in the chip.

Abstract translation: 本发明涉及片上宽带辐射源及其制造方法。 光子IC包括诸如半导体波导的光波导，具有用于吸收在波导中感应的光泵信号的吸收能力的薄III-V材料膜。 III-V膜包括其中实现的LED。 光子IC还包括在波导和膜之间的耦合装置。 该装置提供的波长比传输的辐射波长长的宽带辐射源。 然后可以通过波导将宽带信号耦合出来并在芯片中使用。