公开(公告)号：WO2023031760A1

公开(公告)日：2023-03-09

申请号：PCT/IB2022/058064

申请日：2022-08-29

Applicant: UNIVERSITY OF SOUTH AFRICA

Inventor： VALLABHAPURAPU, Sreedevi ,  VALLABHAPURAPU, Vijaya Srinivasu ,  DLAMINI, Zolille Wiseman

IPC: H01L51/05 ,  H01L51/30 ,  H01L27/00 ,  H01L27/28 ,  H01L45/00 ,  H01L51/00 ,  H01L51/10

Abstract: A non-volatile resistive random-access memory (ReRAM), which includes a first electrode, a second electrode, and a resistive switching/active layer which is located between the first and second electrode. The switching layer contains milk or is milk-based, or contains an emulsion containing lactose, fat, protein and water. The switching layer may more specifically contain cow milk.

公开(公告)号：WO2020109991A1

公开(公告)日：2020-06-04

申请号：PCT/IB2019/060168

申请日：2019-11-26

Applicant: UNIVERSITY OF SOUTH AFRICA

Inventor： SRINIVASAN, Ananthakrishnan ,  VALLABHAPURAPU, Sreedevi ,  VALLABHAPURAPU, Vijaya Srinivasu

IPC: H01L27/00 ,  H01L27/24 ,  H01L45/00

Abstract: The invention relates to a non-volatile resistive random access memory (ReRAM), a non-volatile ReRAM composition and to a method for manufacturing a non-volatile non-volatile ReRAM. The ReRAM includes a first electrode, a second electrode and a resistive switching/active layer which is located between the first and second electrodes. The switching layer contains chitosan and aluminium doped/incorporated zinc oxide. The switching/active layer may be configured to perform a switching operation according to an applied voltage. The switching/active layer may be in the form of a film. The switching/active layer may be coated/applied onto the first electrode and the second electrode may be placed/applied/provided over the switching/active layer such that the switching/active layer is located/wedged in-between the two electrodes.