METHOD AND APPARATUS FOR TREATING A FLUID
    1.
    发明申请
    METHOD AND APPARATUS FOR TREATING A FLUID 审中-公开
    用于处理流体的方法和装置

    公开(公告)号:WO2014076651A1

    公开(公告)日:2014-05-22

    申请号:PCT/IB2013/060129

    申请日:2013-11-14

    Abstract: A method and an apparatus for treating a fluid are disclosed. The apparatus includes a cylindrical chamber of non-magnetic material for holding a volume of fluid to be treated. The fluid contains a quantity of magnetic particles, preferably nanoparticles, having desired properties for treating the fluid. The apparatus includes a magnetic field generator for creating a non-static magnetic field within the chamber, thereby to induce motion in the magnetic particles within the chamber in use. The chamber has an inlet through which fluid to be treated can be introduced, and an outlet through which treated fluid can be removed from the chamber. Sets of windings are disposed concentrically about the chamber and arranged to create a rotating magnetic field within the chamber. Preferably the rotating magnetic field rotates in the opposite sense to swirling rotation of the fluid in the chamber. This enhances contact between the nanoparticles and the fluid to be treated.

    Abstract translation: 公开了一种用于处理流体的方法和装置。 该装置包括用于保持待处理流体体积的非磁性材料的圆柱形室。 流体含有一定数量的具有所需性能的磁性颗粒,优选纳米颗粒,用于处理流体。 该装置包括用于在室内产生非静态磁场的磁场发生器,从而在使用中在室内的磁性颗粒中引起运动。 腔室具有入口,通过该入口可以将被处理流体引入,并且可以从腔室移除经处理的流体的出口。 绕组集合围绕腔室同心设置,并且布置成在腔室内产生旋转磁场。 优选地,旋转磁场以相反的方向旋转,以使腔室中的流体旋转。 这增强了纳米颗粒和待处理流体之间的接触。

    NON-VOLATILE RESISTIVE RANDOM ACCESS MEMORY AND A MANUFACTURING METHOD THEREFOR

    公开(公告)号:WO2020109991A1

    公开(公告)日:2020-06-04

    申请号:PCT/IB2019/060168

    申请日:2019-11-26

    Abstract: The invention relates to a non-volatile resistive random access memory (ReRAM), a non-volatile ReRAM composition and to a method for manufacturing a non-volatile non-volatile ReRAM. The ReRAM includes a first electrode, a second electrode and a resistive switching/active layer which is located between the first and second electrodes. The switching layer contains chitosan and aluminium doped/incorporated zinc oxide. The switching/active layer may be configured to perform a switching operation according to an applied voltage. The switching/active layer may be in the form of a film. The switching/active layer may be coated/applied onto the first electrode and the second electrode may be placed/applied/provided over the switching/active layer such that the switching/active layer is located/wedged in-between the two electrodes.

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