公开(公告)号：WO2017027165A1

公开(公告)日：2017-02-16

申请号：PCT/US2016/042497

申请日：2016-07-15

Applicant: VARIAN SEMICONDUCTOR EQUIPMENT ASSOCIATES, INC.

Inventor： LIANG, Shurong ,  BILOIU, Costel ,  GILCHRIST, Glen F. R. ,  SINGH, Vikram ,  CAMPBELL, Christopher ,  HERTEL, Richard ,  KONTOS, Alexander ,  SFERLAZZO, Piero ,  CHEN, Tsung-Liang

IPC: H01L21/3065 ,  H01L21/67 ,  H01L21/3213 ,  H01L21/02

CPC classification number: H05H1/24 ,  H01J37/32009 ,  H01J37/32357 ,  H01J37/3244 ,  H01J37/32834 ,  H01J2237/327 ,  H01L21/3065 ,  H01L21/308 ,  H01L22/12 ,  H01L22/20

Abstract: An apparatus to treat a substrate. The apparatus may include a reactive gas source having a reactive gas outlet disposed in a process chamber, the reactive gas outlet to direct a first reactive gas to the substrate; a plasma chamber coupled to the process chamber and including an extraction plate having an extraction aperture extending along a first direction, disposed within the process chamber and movable along a second direction perpendicular to the first direction between a first position facing the reactive gas source and a second position facing the extraction aperture; and a gas flow restrictor disposed between the reactive gas outlet and the extraction aperture, the gas flow restrictor defining a differential pumping channel between at least the plasma chamber and substrate stage.

Abstract translation: 一种处理基材的设备。 该装置可以包括反应气体源，其具有布置在处理室中的反应气体出口，反应气体出口将第一反应气体引导到基底; 等离子体室，其耦合到所述处理室并且包括提取板，所述提取板具有沿着第一方向延伸的提取孔，所述提取孔设置在所述处理室内并且可沿着与所述反应气体源相对的第一位置和与所述第一方向垂直的第二方向 面向提取孔的第二位置; 以及设置在所述反应气体出口和所述提取孔之间的气体限流器，所述气体流量限制器在至少所述等离子体室和衬底台之间限定差分泵送通道。