公开(公告)号：WO2018080647A1

公开(公告)日：2018-05-03

申请号：PCT/US2017/050946

申请日：2017-09-11

Applicant: VARIAN SEMICONDUCTOR EQUIPMENT ASSOCIATES, INC.

Inventor： GILCHRIST, Glen FR ,  BILOIU, Costel ,  LIANG, Shurong ,  CAMPBELL, Christopher R. ,  SINGH, Vikram

IPC: H01J37/32 ,  B08B7/00 ,  C23C16/44

CPC classification number: B08B7/00 ,  C23C16/4405 ,  H01J37/32458 ,  H01J37/32513 ,  H01J37/32862

Abstract: A workpiece processing apparatus allowing in situ cleaning of metal deposited formed on the extraction plate and in the plasma chamber is disclosed. The apparatus includes an extraction plate having an extraction aperture through which the sputtering material is passed. The apparatus also includes a sealed volume disposed within the plasma chamber which is in communication with a cleaning aperture on the extraction plate. The sealed volume is in communication with a cleaning gas, which is excited by the plasma in the plasma chamber, and can be used to clean the exterior surface of the extraction plate. The feed gas used in the plasma chamber can be selected from a sputtering species and the cleaning gas. Since the volume in the sealed volume is separated from the rest of the plasma chamber, the cleaning of the extraction plate and the cleaning of the plasma chamber may be performed independently.

Abstract translation: 公开了一种工件处理设备，其允许就地清洁在提取板和等离子体室中形成的沉积金属。 该设备包括具有提取孔的提取板，溅射材料穿过该提取孔。 该设备还包括设置在等离子体腔室内的密封体积，其与提取板上的清洁孔连通。 密封容积与清洁气体连通，清洁气体被等离子体腔室中的等离子体激发，并且可用于清洁提取板的外表面。 在等离子体室中使用的进料气体可以选自溅射物质和清洁气体。 由于密封体积中的体积与等离子体腔室的其余部分分离，所以提取板的清洁和等离子体腔室的清洁可以独立进行。

公开(公告)号：WO2017027165A1

公开(公告)日：2017-02-16

申请号：PCT/US2016/042497

申请日：2016-07-15

Applicant: VARIAN SEMICONDUCTOR EQUIPMENT ASSOCIATES, INC.

Inventor： LIANG, Shurong ,  BILOIU, Costel ,  GILCHRIST, Glen F. R. ,  SINGH, Vikram ,  CAMPBELL, Christopher ,  HERTEL, Richard ,  KONTOS, Alexander ,  SFERLAZZO, Piero ,  CHEN, Tsung-Liang

IPC: H01L21/3065 ,  H01L21/67 ,  H01L21/3213 ,  H01L21/02

CPC classification number: H05H1/24 ,  H01J37/32009 ,  H01J37/32357 ,  H01J37/3244 ,  H01J37/32834 ,  H01J2237/327 ,  H01L21/3065 ,  H01L21/308 ,  H01L22/12 ,  H01L22/20

Abstract: An apparatus to treat a substrate. The apparatus may include a reactive gas source having a reactive gas outlet disposed in a process chamber, the reactive gas outlet to direct a first reactive gas to the substrate; a plasma chamber coupled to the process chamber and including an extraction plate having an extraction aperture extending along a first direction, disposed within the process chamber and movable along a second direction perpendicular to the first direction between a first position facing the reactive gas source and a second position facing the extraction aperture; and a gas flow restrictor disposed between the reactive gas outlet and the extraction aperture, the gas flow restrictor defining a differential pumping channel between at least the plasma chamber and substrate stage.

Abstract translation: 一种处理基材的设备。 该装置可以包括反应气体源，其具有布置在处理室中的反应气体出口，反应气体出口将第一反应气体引导到基底; 等离子体室，其耦合到所述处理室并且包括提取板，所述提取板具有沿着第一方向延伸的提取孔，所述提取孔设置在所述处理室内并且可沿着与所述反应气体源相对的第一位置和与所述第一方向垂直的第二方向 面向提取孔的第二位置; 以及设置在所述反应气体出口和所述提取孔之间的气体限流器，所述气体流量限制器在至少所述等离子体室和衬底台之间限定差分泵送通道。

公开(公告)号：WO2018048566A1

公开(公告)日：2018-03-15

申请号：PCT/US2017/046207

申请日：2017-08-10

Applicant: VARIAN SEMICONDUCTOR EQUIPMENT ASSOCIATES, INC.

Inventor： GILCHRIST, Glen FR ,  LIANG, Shurong

IPC: H01J37/305 ,  H01J37/304

Abstract: A workpiece processing apparatus allowing independent control of the extraction angles of charged ions and reactive neutrals is disclosed. The apparatus includes an extraction plate having an extraction aperture through which charged ions pass. Plasma sheath modulation and electric fields may be used to determine the extraction angle of the charged ions. The extraction plate also includes one or more neutral species channels, separate from the extraction aperture, through which reactive neutrals are passed at a selected extraction angle. The geometric configuration of the neutral species channels determines the extraction angle of the reactive neutrals. The neutral species channel may also comprise a suppressor, to reduce the number of charged ions that pass through the neutral species channel. The apparatus may be used for various applications, such as directed reactive ion etching.

Abstract translation: 公开了允许独立控制带电离子和反应性中性点的提取角度的工件加工装置。 该设备包括具有提取孔的提取板，带电离子通过该提取孔。 可以使用等离子体鞘调制和电场来确定带电离子的提取角度。 提取板还包括一个或多个中性物质通道，与提取孔分开，反应性中性物通过该通道以选定的提取角度通过。 中性物质通道的几何构型决定了反应性中性物质的提取角度。 中性物质通道还可以包含抑制器，以减少通过中性物质通道的带电离子的数量。 该装置可用于各种应用，例如定向反应离子蚀刻。

公开(公告)号：WO2017112352A1

公开(公告)日：2017-06-29

申请号：PCT/US2016/063840

申请日：2016-11-28

Applicant: VARIAN SEMICONDUCTOR EQUIPMENT ASSOCIATES, INC.

Inventor： CHEN, Tsung-Liang ,  HAUTALA, John ,  LIANG, Shurong ,  OLSON, Joseph

IPC: H01J37/32 ,  C23C16/455

CPC classification number: C23C14/54 ,  C23C14/221 ,  C23C14/48 ,  C23C16/045 ,  C23C16/345 ,  C23C16/45544 ,  C23C16/52 ,  H01J37/32422 ,  H01L21/0217 ,  H01L21/02274

Abstract: Approaches herein increase a ratio of reactive ions to a neutral species in a plasma processing apparatus. Exemplary approaches include providing a processing apparatus having a plasma source chamber including a first gas inlet, and a deposition chamber coupled to the plasma source chamber, wherein the deposition chamber includes a second gas inlet for delivering a point of use (POU) gas to an area proximate a substrate disposed within the deposition chamber. Exemplary approaches further include generating an ion beam for delivery to the substrate, and modifying a pressure within the deposition chamber in the area proximate the substrate to increase an amount of reactive ions present for impacting the substrate when the ion beam is delivered to the substrate.

Abstract translation: 本文的方法增加等离子体处理设备中反应离子与中性物种的比率。 示例性方法包括提供具有等离子体源室的处理设备，该等离子体源室包括第一气体入口和耦合到等离子体源室的沉积室，其中该沉积室包括第二气体入口，用于将使用点（POU）气体输送到 区域靠近设置在沉积室内的衬底。 示例性方法进一步包括生成用于递送到衬底的离子束并且修改靠近衬底的区域中的沉积室内的压力以增加当离子束被递送到衬底时用于冲击衬底的反应离子的量。

公开(公告)号：WO2017100053A1

公开(公告)日：2017-06-15

申请号：PCT/US2016/064169

申请日：2016-11-30

Applicant: VARIAN SEMICONDUCTOR EQUIPMENT ASSOCIATES, INC.

Inventor： CHEN, Tsung-Liang ,  HAUTALA, John ,  LIANG, Shurong

IPC: H01L21/768 ,  H01L21/265 ,  H01L21/02

CPC classification number: H01L21/02274 ,  C23C16/045 ,  C23C16/402 ,  C23C16/513 ,  H01L21/02164 ,  H01L21/02211 ,  H01L21/31116 ,  H01L21/76224 ,  H01L21/76831

Abstract: A method may include generating a plasma in a plasma chamber and directing the ions comprising at least one of a condensing species and inert gas species from the plasma to a cavity within a substrate at a non-zero angle of incidence with respect to a perpendicular to a plane of the substrate. The method may further include; depositing a fill material within the cavity using the condensing species, the depositing taking place concurrently with the directing the ions, wherein the fill material accumulates on a lower surface of the cavity at a first rate, and wherein the fill material accumulates on an upper portion of a sidewall of the cavity at a second rate less than the first rate.

Abstract translation: 一种方法可以包括在等离子体室中产生等离子体并且将包括来自等离子体的冷凝物质和惰性气体物质中的至少一种的离子引导至衬底内的空腔以非零角度 相对于垂直于衬底平面的入射角。 该方法可以进一步包括： 使用冷凝物质在腔内沉积填充材料，沉积与引导离子同时进行，其中填充材料以第一速率积聚在腔的下表面上，并且其中填充材料积聚在腔的上部 以小于所述第一速率的第二速率传播所述空腔的侧壁。

公开(公告)号：WO2017019312A1

公开(公告)日：2017-02-02

申请号：PCT/US2016/042261

申请日：2016-07-14

Applicant: VARIAN SEMICONDUCTOR EQUIPMENT ASSOCIATES, INC.

Inventor： LIANG, Shurong ,  BILOIU, Costel ,  GILCHRIST, Glen ,  SINGH, Vikram ,  CAMPBELL, Christopher ,  HERTEL, Richard ,  KONTOS, Alexander C.

IPC: H01L21/3065 ,  H05H1/46 ,  H01L21/02 ,  H01L21/3213

CPC classification number: H01J37/3053 ,  C23F4/00 ,  H01J37/08 ,  H01J37/1471

Abstract: In one embodiment, an apparatus to treat a substrate may include an extraction plate to extract a plasma beam from a plasma chamber and direct the plasma beam to the substrate. The plasma beam may comprise ions forming a non-zero angle of incidence with respect to a perpendicular to a plane of the substrate; and a gas outlet system disposed outside the plasma chamber, the gas outlet system coupled to a gas source and arranged to deliver to the substrate a reactive gas received from the gas source, wherein the reactive gas does not pass through the plasma chamber.

Abstract translation: 在一个实施例中，用于处理衬底的设备可以包括提取板，以从等离子体室提取等离子体束并将等离子体束引导到衬底。 等离子体束可以包括相对于衬底的平面的垂直线形成非零入射角的离子; 以及设置在所述等离子体室外部的气体出口系统，所述气体出口系统耦合到气体源并被布置成将从所述气体源接收的反应性气体输送到所述衬底，其中所述反应气体不通过所述等离子体室。

公开(公告)号：WO2019005304A1

公开(公告)日：2019-01-03

申请号：PCT/US2018/032182

申请日：2018-05-11

Applicant: VARIAN SEMICONDUCTOR EQUIPMENT ASSOCIATES, INC.

Inventor： GILCHRIST, Glen F. R ,  PERVAIZ, Raees ,  STARKS, Kenneth ,  LIANG, Shurong ,  ROCKWELL, Tyler

IPC: H01L21/3065 ,  H01L21/311 ,  H01L21/3213 ,  H01L21/67

Abstract: A method may include generating a plasma in a plasma chamber, the plasma comprising an etchant species and extracting a pulsed ion beam from the plasma chamber and directing the pulsed ion beam to a substrate, where the pulsed ion beam comprises an ON portion and an OFF portion. During the OFF portion the substrate may not be biased with respect to the plasma chamber, and the duration of the OFF portion may be less than a transit time of the etchant species from the plasma chamber to the substrate.

公开(公告)号：WO2018118263A1

公开(公告)日：2018-06-28

申请号：PCT/US2017/061067

申请日：2017-11-10

Applicant: VARIAN SEMICONDUCTOR EQUIPMENT ASSOCIATES, INC.

Inventor： WALLACE, Jay R. ,  ALLEN, Ernest E. ,  HERTEL, Richard J. ,  KONTOS, Alexander C. ,  LIANG, Shurong ,  KRAMPERT, Jeffrey E. ,  ROCKWELL, Tyler

IPC: H01J37/32 ,  H01J37/02 ,  H01J37/305

Abstract: A gas injection system, including an extraction plate having an extraction aperture for allowing passage of an ion beam through the extraction plate, the extraction plate further having a gas slot for expulsion of a residue removal gas from the extraction plate. The gas injection system may include a gas conduit extending through the extraction plate between the gas slot and a gas manifold, a gas source connected in fluid communication with the gas manifold, the gas source containing the residue removal gas. The gas manifold may include a valve adjustable between a first position, wherein the residue removal gas is allowed to flow into the extraction plate, and a second portion, wherein the residue removal gas can be vented from the extraction plate. The gas injection system may further include a manifold cover coupled to the gas manifold.

公开(公告)号：WO2017176566A1

公开(公告)日：2017-10-12

申请号：PCT/US2017/025265

申请日：2017-03-31

Applicant: VARIAN SEMICONDUCTOR EQUIPMENT ASSOCIATES, INC.

Inventor： CHEN, Tsung-Liang ,  LIANG, Shurong ,  KONTOS, Alexander C.

IPC: H01L43/02 ,  H01L43/10 ,  H01L43/08 ,  H01L43/12

CPC classification number: H01L43/02 ,  H01L43/08 ,  H01L43/12

Abstract: A method may include: providing a device stack, the device stack comprising sidewall portions and extending above a substrate base, the device stack further including a plurality of metal layers; depositing an interface layer conformally over the device stack using an atomic layer deposition process, the interface layer comprising a first insulator material; depositing an encapsulation layer on the interface layer, the encapsulation layer comprising a second insulator material; and depositing an interlevel dielectric disposed on the encapsulation layer, the interlevel dielectric comprising a third insulator material.

Abstract translation: 一种方法可以包括：提供器件堆叠，所述器件堆叠包括侧壁部分并且在衬底基底上方延伸，所述器件堆叠还包括多个金属层; 使用原子层沉积工艺在器件堆叠上共形地沉积界面层，界面层包括第一绝缘体材料; 在所述界面层上沉积封装层，所述封装层包括第二绝缘体材料; 以及沉积设置在所述封装层上的层间电介质，所述层间电介质包括第三绝缘体材料。