公开(公告)号：WO2014018707A1

公开(公告)日：2014-01-30

申请号：PCT/US2013/051943

申请日：2013-07-25

Applicant: VARIAN SEMICONDUCTOR EQUIPMENT ASSOCIATES, INC.

Inventor： GODET, Ludovic ,  SARAJLIC, Adjin

IPC: C23C14/34 ,  H01J37/32 ,  H01J37/34 ,  H01J37/08

CPC classification number: H01J37/32422 ,  C23C14/046 ,  C23C14/3407 ,  C23C14/345 ,  H01J37/32357 ,  H01J37/32403 ,  H01J37/32623 ,  H01J37/32633 ,  H01J37/32642 ,  H01J37/3414 ,  H01J37/3417 ,  H01J37/3467 ,  H01J2237/08 ,  H01J2237/31701

Abstract: A plasma processing apparatus (200) is disclosed. The plasma processing apparatus includes a source (206) configured to generate a plasma (140) in a process chamber (202) having a plasma sheath (242) adjacent to the front surface of a workpiece (138), and a plasma sheath modifier (208). The plasma sheath modifier controls a shape of a boundary (241) between the plasma and the plasma sheath so a portion of the shape of the boundary is not parallel to a plane (151) defined by a front surface of the workpiece facing the plasma. A metal target (209) is affixed to the back surface of the plasma sheath modifier so as to be electrically insulated from the plasma sheath modifier and is electrically biased such that ions (102) exiting the plasma and passing through an aperture in the plasma sheath modifier are attracted toward the metal target. These ions cause sputtering of the metal target, allowing three dimensional metal deposition of the workpiece.

Abstract translation: 公开了一种等离子体处理装置（200）。 等离子体处理装置包括：源（206），被配置为在具有与工件（138）的前表面相邻的等离子体鞘（242）的处理室（202）中产生等离子体（140） 208）。 等离子体护套修改器控制等离子体和等离子体护套之间的边界（241）的形状，使得边界形状的一部分不平行于由面向等离子体的工件的前表面限定的平面（151）。 金属靶（209）固定到等离子体护套改性剂的背面，以便与等离子体护套改性剂电绝缘，并被电偏置，使得离开等离子体并通过等离子体护套中的孔的离子（102） 改性剂被吸引到金属靶。 这些离子引起金属靶溅射，允许工件的三维金属沉积。