公开(公告)号：WO2021202335A1

公开(公告)日：2021-10-07

申请号：PCT/US2021/024581

申请日：2021-03-29

Applicant: VERSUM MATERIALS US, LLC

Inventor： XIAO, Manchao ,  ENTLEY, William Robert ,  SPENCE, Daniel P. ,  NICHOLAS, Raymond ,  ACHTYL, Jennifer Lynn Anne ,  RIDGEWAY, Robert Gordon ,  LEI, Xinjian

IPC: C23C16/40 ,  C23C16/50 ,  H01L21/02 ,  C07F7/18

Abstract: A method for making a dense organosilicon film with improved mechanical properties, the method comprising the steps of: providing a substrate within a reaction chamber; introducing into the reaction chamber a gaseous composition comprising hydridodimethyl-alkoxysilane; and applying energy to the gaseous composition comprising hydridodimethyl-alkoxysilane in the reaction chamber to induce reaction of the gaseous composition comprising hydrido-dimethyl-alkoxysilane to deposit an organosilicon film on the substrate, wherein the organosilicon film has a dielectric constant from ~ 2.70 to ~ 3.50, an elastic 10 modulus of from ~ 6 to ~ 36 GPa, and an at. % carbon from ~ 10 to ~ 36 as measured by XPS.

公开(公告)号：WO2022245742A1

公开(公告)日：2022-11-24

申请号：PCT/US2022/029471

申请日：2022-05-16

Applicant: VERSUM MATERIALS US, LLC

Inventor： ENTLEY, William Robert ,  ACHTYL, Jennifer Lynn Anne ,  LEI, Xinjian ,  XIAO, Manchao ,  SPENCE, Daniel P. ,  RIDGEWAY, Robert Gordon ,  VRTIS, Raymond N.

IPC: C23C16/40 ,  C23C16/50 ,  H01L21/02

Abstract: A method for making a dense organosilicon film with improved mechanical properties, the method comprising the steps of: providing a substrate within a reaction chamber; introducing into the reaction chamber a gaseous composition comprising hydrido-dimethyl-alkoxysilane; and applying energy to the gaseous composition comprising hydrido-dimethyl-alkoxysilane in the reaction chamber to induce reaction of the gaseous composition comprising hydrido-dimethyl-alkoxysilane to deposit an organosilicon film on the substrate, wherein the organosilicon film has a dielectric constant from ~ 2.70 to ~ 3.50, an elastic modulus of from ~ 6 to ~ 32 GPa, and an at. % carbon from ~ 10 to ~ 35 as measured by XPS.

公开(公告)号：WO2022087151A1

公开(公告)日：2022-04-28

申请号：PCT/US2021/055879

申请日：2021-10-20

Applicant: VERSUM MATERIALS US, LLC

Inventor： XIAO, Manchao ,  SPENCE, Daniel P. ,  LEI, Xinjian ,  ENTLEY, William Robert ,  VRTIS, Raymond Nicholas ,  ACHTYL, Jennifer Lynn Anne ,  RIDGEWAY, Robert Gordon

IPC: C23C16/40 ,  C23C16/505 ,  H01L21/02 ,  B05D1/00

Abstract: A method for making a dense organosilicon film with improved mechanical properties includes the steps of: providing a substrate within a reaction chamber; introducing into the reaction chamber a gaseous composition comprising alkoxydisiloxane; and applying energy to the gaseous composition comprising alkoxydisiloxane in the reaction chamber to induce reaction of the gaseous composition comprising alkoxydisiloxane to deposit an organosilicon film on the substrate, wherein the organosilicon film has a dielectric constant of from ~ 2.50 to ~ 3.30, an elastic modulus of from ~ 6 to ~ 35 GPa, and an at. % carbon of from ~ 10 to ~ 40 as measured by.

公开(公告)号：WO2022066508A1

公开(公告)日：2022-03-31

申请号：PCT/US2021/050736

申请日：2021-09-16

Applicant: VERSUM MATERIALS US, LLC

Inventor： ENTLEY, William Robert ,  ACHTYL, Jennifer Lynn Anne ,  VRTIS, Raymond Nicholas ,  RIDGEWAY, Robert Gordon

IPC: C23C16/40 ,  C23C16/505 ,  H01L21/02 ,  C08G77/18 ,  C08G77/12 ,  H01B3/46

Abstract: A method for improving the elastic modulus of dense organosilica dielectric films (k ≥ 2.7) without negatively impacting the film's electrical properties and with minimal to no reduction in the carbon content of the film. The method comprising the steps of: providing a substrate within a reaction chamber; introducing into the reaction chamber a gaseous composition comprising a mixture of an alkyl-alkoxysilacyclic compound and 5% or less of certain bis(alkoxy)silanes or mono-alkoxysilanes; and applying energy to the gaseous composition comprising the mixture of the alkyl-alkoxysilacyclic compound and 5% or less of certain bis(alkoxy)silanes or mono-alkoxysilanes to deposit an organosilicon film on the substrate, wherein the organosilicon film has a dielectric constant from ~ 2.70 to ~ 3.30, an elastic modulus of from ~ 6 to ~ 30 GPa, and an at. % carbon from ~ 10 to ~ 45 as measured by XPS.

公开(公告)号：WO2021050798A1

公开(公告)日：2021-03-18

申请号：PCT/US2020/050283

申请日：2020-09-11

Applicant: VERSUM MATERIALS US, LLC

Inventor： XIAO, Manchao ,  ENTLEY, William Robert ,  SPENCE, Daniel P. ,  VRTIS, Raymond Nicholas ,  ACHTYL, Jennifer Lynn Anne ,  RIDGEWAY, Robert Gordon ,  LEI, Xinjian

IPC: C23C16/44 ,  C23C16/50 ,  B05D1/00

Abstract: A method for making a dense organosilicon film with improved mechanical properties, the method comprising the steps of: providing a substrate within a reaction chamber; introducing into the reaction chamber a gaseous composition comprising a novel mono- or dialkoxysilane; and applying energy to the gaseous composition comprising the novel mono- or dialkoxysilane in the reaction chamber to induce reaction of the gaseous composition comprising the novel mono-or dialkoxysilane to deposit an organosilicon film on the substrate, wherein the organosilicon film has a dielectric constant of from about 2.8 to about 3.3, an elastic modulus of from about 7 to about 30 GPa, and an at. % carbon of from about 10 to about 30 as measured by XPS.

公开(公告)号：WO2021050659A1

公开(公告)日：2021-03-18

申请号：PCT/US2020/050095

申请日：2020-09-10

Applicant: VERSUM MATERIALS US, LLC

Inventor： XIAO, Manchao ,  ENTLEY, William Robert ,  SPENCE, Daniel P. ,  VRTIS, Raymond Nicholas ,  ACHTYL, Jennifer Lynn Anne ,  RIDGEWAY, Robert Gordon ,  LEI, Xinjian

IPC: C23C14/12 ,  C23C16/18 ,  H01L21/02

Abstract: A method for making a dense organosilicon film with improved mechanical properties, the method comprising the steps of: providing a substrate within a reaction chamber; introducing into the reaction chamber a gaseous composition comprising a novel 5 monoalkoxysilane; and applying energy to the gaseous composition comprising a novel monoalkoxysilane in the reaction chamber to induce reaction of the gaseous composition comprising a novel monoalkoxysilane to deposit an organosilicon film on the substrate, wherein the organosilicon film has a dielectric constant of from about 2.80 to about 3.30, an elastic modulus of from about 9 to about 32 GPa, and an at. % carbon of from about 10 to 10 about 30 as measured by XPS.