公开(公告)号：WO2022197421A2

公开(公告)日：2022-09-22

申请号：PCT/US2022/017951

申请日：2022-02-25

Applicant: WOLFSPEED, INC.

Inventor： KIM, Joohyung ,  HAN, Kijeong ,  HARRINGTON, III, Thomas E. ,  VAN BRUNT, Edward Robert ,  RYU, Sei-Hyung

IPC: H01L21/76 ,  H01L21/761 ,  H01L27/06 ,  H01L29/739 ,  H01L29/78 ,  H01L29/861 ,  H01L29/06 ,  H01L29/16 ,  H01L49/02 ,  H01L21/7602 ,  H01L21/7605 ,  H01L27/0629 ,  H01L28/20 ,  H01L29/0619 ,  H01L29/0692 ,  H01L29/1608 ,  H01L29/7395 ,  H01L29/7803 ,  H01L29/7804 ,  H01L29/7811 ,  H01L29/7815

Abstract: Shielding techniques are used to provide an embedded sensor element such as a temperature sensing element on a wide bandgap power semiconductor device. A semiconductor device may include a drift layer and an embedded sensor element. The drift layer may be a wide bandgap semiconductor material. A shielding structure is provided in the drift layer below the embedded sensor element. The embedded sensor element may be provided between contacts that are in electrical contact with the shielding well. The distance between the contacts may be minimized. A noise reduction well may be provided between the contacts to further isolate the embedded sensor element from parasitic signals.