公开(公告)号：WO2023278294A1

公开(公告)日：2023-01-05

申请号：PCT/US2022/035071

申请日：2022-06-27

Applicant: MICROCHIP TECHNOLOGY INCORPORATED

Inventor： DARYANANI, Sonu

IPC: G01K7/16 ,  H01L29/78 ,  H01L27/02 ,  G01K2217/00 ,  G01K7/01 ,  H01L27/0248 ,  H01L29/1608 ,  H01L29/7803 ,  H01L29/7838

Abstract: A temperature sensor integrated in a transistor array, e.g., metal–oxide–semiconductor field-effect transistor (MOSFET) array, is provided. The integrated temperature sensor may include a doped well region formed in a substrate (e.g., SiC substrate), a resistor gate formed over the doped well region, first and second sensor terminals conductively coupled to the doped well region on opposite sides of the resistor gate. The integrated temperature sensor includes a gate driver to apply a voltage to the resistor gate that affects a resistance of the doped well region below the resistor gate, and temperature analysis circuitry to determine a resistance of a conductive path passing through the doped well region, and determine a temperature associated with the transistor array.

公开(公告)号：WO2022197421A2

公开(公告)日：2022-09-22

申请号：PCT/US2022/017951

申请日：2022-02-25

Applicant: WOLFSPEED, INC.

Inventor： KIM, Joohyung ,  HAN, Kijeong ,  HARRINGTON, III, Thomas E. ,  VAN BRUNT, Edward Robert ,  RYU, Sei-Hyung

IPC: H01L21/76 ,  H01L21/761 ,  H01L27/06 ,  H01L29/739 ,  H01L29/78 ,  H01L29/861 ,  H01L29/06 ,  H01L29/16 ,  H01L49/02 ,  H01L21/7602 ,  H01L21/7605 ,  H01L27/0629 ,  H01L28/20 ,  H01L29/0619 ,  H01L29/0692 ,  H01L29/1608 ,  H01L29/7395 ,  H01L29/7803 ,  H01L29/7804 ,  H01L29/7811 ,  H01L29/7815

Abstract: Shielding techniques are used to provide an embedded sensor element such as a temperature sensing element on a wide bandgap power semiconductor device. A semiconductor device may include a drift layer and an embedded sensor element. The drift layer may be a wide bandgap semiconductor material. A shielding structure is provided in the drift layer below the embedded sensor element. The embedded sensor element may be provided between contacts that are in electrical contact with the shielding well. The distance between the contacts may be minimized. A noise reduction well may be provided between the contacts to further isolate the embedded sensor element from parasitic signals.

公开(公告)号：WO2021257303A1

公开(公告)日：2021-12-23

申请号：PCT/US2021/036138

申请日：2021-06-07

Applicant: POWER INTEGRATIONS, INC.

Inventor： VARADARAJAN, Kamal Raj ,  YANG, Kuo-Chang Robert ,  GEORGESCU, Sorin S.

IPC: H01L27/085 ,  H01L27/098 ,  H01L21/82 ,  H01L29/78 ,  H01L29/808 ,  H01L21/8213 ,  H01L29/1608 ,  H01L29/7803 ,  H01L29/8083

Abstract: Auxiliary junction field effect transistors (JFETs) for vertical power devices are disclosed herein. By adjusting a JFET channel width (W2) and providing an auxiliary connection (i.e., a tap connection 154) to one or more unit cells (152) in a power device (e.g., power MOSFET), an auxiliary JFET is formed to function as a tap element. The auxiliary JFET may be advantageously implemented in a conventional silicon (Si) and/or silicon carbide (SiC) process flow without introducing additional process steps. Additionally, the auxiliary JFET (i.e., tap element) may occupy a small portion (e.g., a standard pad size portion) of the total chip area.