公开(公告)号：WO2021142602A1

公开(公告)日：2021-07-22

申请号：PCT/CN2020/071896

申请日：2020-01-14

Applicant: YANGTZE MEMORY TECHNOLOGIES CO., LTD.

Inventor： LIU, Song ,  SHEN, Chao ,  CHEN, Dejian ,  WANG, Wenting ,  HUANG, Xinxin ,  XU, Zhiping

IPC: H01L27/11524 ,  H01L21/0214 ,  H01L21/0228 ,  H01L21/3105 ,  H01L21/324 ,  H01L27/11563 ,  H01L27/11568 ,  H01L27/1157 ,  H01L27/11578 ,  H01L27/11582 ,  H01L29/40117 ,  H01L29/4234 ,  H01L29/518

Abstract: Embodiments of memory devices and fabrication methods thereof are disclosed. In an example, a memory device includes a substrate, a memory stack, and a channel structure. The memory stack includes interleaved conductor layers and dielectric layers over the substrate. The channel structure extends through the memory stack into the substrate and includes a functional layer that includes a tunneling layer of which a nitrogen weight percent is not greater than about 28%.