公开(公告)号：WO2021127464A1

公开(公告)日：2021-06-24

申请号：PCT/US2020/066050

申请日：2020-12-18

Applicant: L'AIR LIQUIDE, SOCIETE ANONYME POUR L'ETUDE ET L'EXPLOITATION DES PROCEDES GEORGES CLAUDE ,  AMERICAN AIR LIQUIDE, INC.

Inventor： NODA, Naoto ,  OSHCHEPKOV, Ivan ,  GIRARD, Jean-Marc

IPC: H01L21/31 ,  H01L21/318 ,  C23C16/308 ,  C23C16/345 ,  C23C16/45536 ,  C23C16/45553 ,  H01L21/0214 ,  H01L21/0217 ,  H01L21/02208 ,  H01L21/02219 ,  H01L21/02274 ,  H01L21/0228 ,  H01L21/0337

Abstract: Disclosed is a method for forming Si-containing films, such as SiN film, by PEALD using trisilylamine (TSA) at ultralow temperature, such as a temperature below 250°C.

公开(公告)号：WO2021252788A1

公开(公告)日：2021-12-16

申请号：PCT/US2021/036856

申请日：2021-06-10

Applicant: ENTEGRIS, INC.

Inventor： CHEN, Philip S. H. ,  CONDO, Eric ,  HENDRIX, Bryan C. ,  BAUM, Thomas H. ,  KUIPER, David

IPC: C23C16/455 ,  C23C16/36 ,  H01L21/02 ,  C07F7/10 ,  C07F7/18 ,  C01B21/0828 ,  C07F7/0814 ,  C07F7/1804 ,  C23C16/308 ,  C23C16/401 ,  C23C16/45536 ,  C23C16/45542 ,  C23C16/45553 ,  H01L21/02126 ,  H01L21/0214 ,  H01L21/02211 ,  H01L21/02274 ,  H01L21/0228

Abstract: Provided is a plasma enhanced atomic layer deposition (PEALD) process for depositing etch-resistant SiOCN films. These films provide improved growth rate, improved step coverage and excellent etch resistance to wet etchants and post-deposition plasma treatments containing O2 and NH3 co-reactants. This PEALD process relies on one or more precursors reacting in tandem with the plasma exposure to deposit the etch-resistant thin-films of SiOCN. The films display excellent resistance to wet etching with dilute aqueous HF solutions, both after deposition and after post-deposition plasma treatment(s). Accordingly, these films are expected to display excellent stability towards post-deposition fabrication steps utilized during device manufacturing and build.

公开(公告)号：WO2021142602A1

公开(公告)日：2021-07-22

申请号：PCT/CN2020/071896

申请日：2020-01-14

Applicant: YANGTZE MEMORY TECHNOLOGIES CO., LTD.

Inventor： LIU, Song ,  SHEN, Chao ,  CHEN, Dejian ,  WANG, Wenting ,  HUANG, Xinxin ,  XU, Zhiping

IPC: H01L27/11524 ,  H01L21/0214 ,  H01L21/0228 ,  H01L21/3105 ,  H01L21/324 ,  H01L27/11563 ,  H01L27/11568 ,  H01L27/1157 ,  H01L27/11578 ,  H01L27/11582 ,  H01L29/40117 ,  H01L29/4234 ,  H01L29/518

Abstract: Embodiments of memory devices and fabrication methods thereof are disclosed. In an example, a memory device includes a substrate, a memory stack, and a channel structure. The memory stack includes interleaved conductor layers and dielectric layers over the substrate. The channel structure extends through the memory stack into the substrate and includes a functional layer that includes a tunneling layer of which a nitrogen weight percent is not greater than about 28%.