METHOD AND APPARATUS FOR ANALYZING AND FOR REMOVING A DEFECT OF AN EUV PHOTOMASK
    1.
    发明申请
    METHOD AND APPARATUS FOR ANALYZING AND FOR REMOVING A DEFECT OF AN EUV PHOTOMASK 审中-公开
    用于分析和消除EUV光电片缺陷的方法和设备

    公开(公告)号:WO2013010976A3

    公开(公告)日:2013-03-14

    申请号:PCT/EP2012063881

    申请日:2012-07-16

    CPC classification number: G01Q30/02 B82Y10/00 B82Y40/00 G03F1/22 G03F1/84 G03F1/86

    Abstract: The invention refers to a method for analyzing a defect of an optical element for the extreme ultra-violet wavelength range comprising at least one substrate and at least one multi-layer structure, the method comprising the steps: (a) determining first data by exposing the defect to ultra-violet radiation, (b) determining second data by scanning the defect with a scanning probe microscope, (c) determining third data by scanning the defect with a scanning particle microscope, and (d) combining the first, the second and the third data.

    Abstract translation: 本发明涉及一种用于分析包括至少一个衬底和至少一个多层结构的极紫外波长范围的光学元件的缺陷的方法,该方法包括以下步骤:(a)通过曝光来确定第一数据 (b)通过用扫描探针显微镜扫描缺陷来确定第二数据,(c)通过用扫描粒子显微镜扫描缺陷来确定第三数据,以及(d)将第一,第二 和第三个数据。

    METHOD AND DEVICE FOR DETERMINING A REFERENCE POINT OF AN ORIENTATION MARKING ON A SUBSTRATE OF A PHOTOLITHOGRAPHIC MASK IN AN AUTOMATED MANNER
    2.
    发明申请
    METHOD AND DEVICE FOR DETERMINING A REFERENCE POINT OF AN ORIENTATION MARKING ON A SUBSTRATE OF A PHOTOLITHOGRAPHIC MASK IN AN AUTOMATED MANNER 审中-公开
    METHOD AND APPARATUS FOR AUTOMATED确定登记号码的一个参考点ON A SUBSTRATE光刻掩模

    公开(公告)号:WO2014202517A3

    公开(公告)日:2015-02-26

    申请号:PCT/EP2014062533

    申请日:2014-06-16

    CPC classification number: G01B11/14 G03F7/70141 G03F9/7007 G03F9/7088

    Abstract: The invention relates to a method for determining a reference point of an orientation marking on a substrate of a photolithographic mask in an automated manner, comprising the following steps: (a) performing a first line scan within a start region of the substrate in a first direction on a surface of the substrate, wherein the orientation marking is arranged within the start region, in order to find a first element of the orientation marking; (b) performing a second line scan within the start region in at least one second direction on the surface of the substrate, which at least one second direction intersects with the first direction, in order to find a second element of the orientation marking; (c) estimating the reference point of the orientation marking from the found first element and the found second element of the orientation marking; and (d) imaging a target region around the estimated reference point of the orientation marking in order to determine the reference of the orientation marking, wherein the imaging is performed with a higher resolution than the performance of the line scans in steps (a) and (b).

    Abstract translation: 本发明涉及自动确定光刻掩模的衬底上的对准标记的参考点,其包含以下步骤的方法:(a)所述基材的起始范围内以第一方向在基板的一个表面上执行第一线扫描,其中,所述对准标记 设置用于定位的第一构件的对准标记的开始区域内; (B)在至少一个第二方向上的衬底的表面上的启动区域内执行的第二扫描线,相交的第一方向上,以定位对准标记的第二元素; (C)估计从所述检索到的第一元件和对准标记的发现第二元件的对准标记的参考点; 和(d)成像围绕对准标记的估计出的基准点的目标区域周围,用于确定对准标记的参考点,其中以更高的分辨率比确实在步骤执行行扫描的映射的(a)和(b)。

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