Abstract:
The invention refers to a method for analyzing a defect of an optical element for the extreme ultra-violet wavelength range comprising at least one substrate and at least one multi-layer structure, the method comprising the steps: (a) determining first data by exposing the defect to ultra-violet radiation, (b) determining second data by scanning the defect with a scanning probe microscope, (c) determining third data by scanning the defect with a scanning particle microscope, and (d) combining the first, the second and the third data.
Abstract:
The invention relates to a method for determining a reference point of an orientation marking on a substrate of a photolithographic mask in an automated manner, comprising the following steps: (a) performing a first line scan within a start region of the substrate in a first direction on a surface of the substrate, wherein the orientation marking is arranged within the start region, in order to find a first element of the orientation marking; (b) performing a second line scan within the start region in at least one second direction on the surface of the substrate, which at least one second direction intersects with the first direction, in order to find a second element of the orientation marking; (c) estimating the reference point of the orientation marking from the found first element and the found second element of the orientation marking; and (d) imaging a target region around the estimated reference point of the orientation marking in order to determine the reference of the orientation marking, wherein the imaging is performed with a higher resolution than the performance of the line scans in steps (a) and (b).