Abstract:
A method of preparing a boron nitride material, such as boron nitride (BN) or boron carbonitride (BCN), is provided. The method may include providing a substrate, and sublimating an amine borane complex onto the substrate to obtain the boron nitride material. The amine borane complex may include, but is not limited to, borazine, amino borane, trimethylamine borane and triethylamine borane. In addition, the temperature at which the sublimating is carried out may be varied to control composition of the boron nitride material formed. In addition, various morphologies can be obtained by using the present method, namely films, nanotubes and porous foam.
Abstract:
The invention provides new methods for synthesis of B 9 H 9 , B 10 H 10 2- , B 11 H 14 , and B 12 H 12 2- salts, particularly alkylammonium salts of B 9 H 9 , B 10 H 10 2- , B 11 H 14 , and B 12 H 12 2- . More particularly, the invention provides methods of preparing tetraalkylammonium salts of B 9 H 9 , B 10 H 10 2-, B 11 H 14 , and B 12 H 12 2- by pyrolysis of tetraalkylammonium borohydrides under controlled conditions. The invention additionally provides methods of preparing, in an atom efficient process, octadecaborane from the tetraalkylammonium salts of the invention. Preferred methods of the invention are suitable for preparation of isotopically enriched boranes, particularly isotopically enriched 10B 18 H 22 and 11 B 18 H 22 .