Abstract:
A system and method for mixing and/or diluting ultrapure fluids, such as liquid acids, for semiconductor processing. The system includes first and second chemical dispensers, the first and second chemical dispensers adapted to contain first and second fluids to be mixed, respectively; a process connection between the first and second chemical dispensers which allows the first and second fluids to flow therethrough and intermingle to form a mixed fluid, the process connection further allowing the mixed fluid to flow to a location needed by the operator; and an ultrasonic wave emitting device (28), the device (28) provided in a location sufficient to transmit an ultrasonic wave through the mixed fluid, the device (28) including means to measure the velocity of the wave through the mixed fluid, and thus indirectly measure a ratio defined by a quantity of the first chemical to a quantity of the second chemical in the mixed fluid.
Abstract:
Highly purified ammonia for use in processes for the production of high-precision electronic components is prepared on-site by drawing ammonia vapor from a liquid ammonia reservoir, passing the vapor through a filter capable of filtering out particles of less than 0.005 micron in size, and scrubbing the filtered vapor in a high-pH aqueous liquid-vapor contact unit.
Abstract:
Highly purified HCl for use in semiconductor manufacturing is prepared on-site by drawing HCl vapor (12) from a liquid HCl reservoir (11), and scrubbing (17) the filtered vapor (15) in a low-pH aqueous scrubber (17).
Abstract:
A system for purification and generation of hydrofluoric acid on-site at a semiconductor device fabrication facility. An evaporation stage (optionally with arsenic oxidation) is followed by a fractionating column to remove most other impurities, an Ionic Purifier column to suppress contaminants not removed by the fractionating column, and finally the HF Supplier (HFS).
Abstract:
A process for preparing ultra-high-purity buffered hydrofluoric acid on-site at a semiconductor manufacturing facility. Anhydrous ammonia is purified by scrubbing (17) in a high-pH liquor, and then combined with high-purity aqueous HF which has been purified by a similar process. The generation is monitored by a density measurement to produce an acid whose pH and buffering are accurately controlled.
Abstract:
Die Erfindung betrifft ein Verfahren und eine Vorrichtung zum Herstellen von verdünnter Flusssäure mittels einer Elektrodenanordnung (1), die eine Anodenkammer (2) mit einer Anode (4) und eine Kathodenkammer (6) mit einer Kathode (8) aufweist, die durch eine Anionen-Tauschermembran (10) voneinander getrennt sind, wobei bei dem Verfahren - reines Wasser durch die Anodenkammer (2) und - reines Wasser, in dem sich wenigstens ein Elektrolyt befindet, der Fluorid-Ionen (F-) bildet, durch die Kathodenkammer (6) geleitet wird - und eine elektrische Spannung zwischen der Anode (4) und der Kathode 8 angelegt wird, so dass die Fluorid-Ionen (F-) durch die Anionen-Tauschermembran (10) in die Anodenkammer (2) bewegt werden und ein elektrischer Strom fließt.
Abstract:
The present invention relates to an azeotropic or azeotrope-like mixture consisting essentially of 1,1,1,2,3,3-hexafluoropropane, hexafluoropropene and hydrogen fluoride.
Abstract:
The present invention relates to an azeotropic or azeotrope-like mixture consisting essentially of 1,1,1,2,3,3-hexafluoropropane, hexafluoropropene and hydrogen fluoride.
Abstract:
Highly purified ammonia for use in semiconductor manufacturing is prepared on-site by drawing ammonia vapor from a liquid ammonia reservoir, passing the vapor through a filter capable of filtering out particles of less than 0.005 micron in size, and scrubbing the filtered vapor in a high-pH aqueous scrubber.
Abstract:
A system and method for semiconductor manufacture using on-site distillation to obtain ultra pure nitric acid from technical grade starting material. The source material for distillation (T-3) is provided at a concentration higher than that of the high boiling point azeotrope, so that dilution does not occur during condensation (C-1). A reflux condenser (CD-1) is used, with a purge of at least 5 % to prevent impurities from accumulating. This is performed on site, at a semiconductor manufacturing facility and the ultrapure chemical thus generated is routed directly, through ultraclean piping, to the point of use in a semiconductor front end (T-5).