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    SUBSTANTIALLY PURE DISUBSTITUTED BERYLLIUM COMPOUNDS AND USES THEREOF
    4.
    发明申请
    SUBSTANTIALLY PURE DISUBSTITUTED BERYLLIUM COMPOUNDS AND USES THEREOF 审中-公开
    基本上纯的双取代铍化合物及其用途

    公开(公告)号：WO2013019849A3

    公开(公告)日：2013-05-10

    申请号：PCT/US2012049141

    申请日：2012-08-01

    申请人： GRAPHEA INC ,  BIELAWSKI CHRISTOPHER W ,  HUDNALL TODD ,  RONALTER MICHAEL

    发明人： BIELAWSKI CHRISTOPHER W ,  HUDNALL TODD ,  RONALTER MICHAEL

    IPC分类号： C01F3/02 ,  B01J19/24 ,  C07F3/00

    CPC分类号： C07F3/006 ,  C01F3/02 ,  C23C16/403

    摘要： The disclosure relates to the preparation of substantially pure disubstituted beryllium compounds suitable for the preparation of semiconductive beryllium oxide films. In some embodiments, the purification of the disubstituted beryllium compounds is achieved with the aid of a sublimation vessel that provides uniform heating. The sublimation vessel, along with its heating chamber subassembly, is disclosed. In one embodiment, a beryllium oxide film is prepared from the substantially pure disubstituted beryllium compounds. The disclosure further relates to the deposition of beryllium oxide film layers onto surfaces in a variety of applications.

    摘要翻译： 本公开涉及适用于制备半导体氧化铍膜的基本上纯的二取代的铍化合物的制备。 在一些实施方案中，二取代的铍化合物的纯化借助于提供均匀加热的升华容器来实现。 公开了升华容器及其加热室子组件。 在一个实施方案中，从基本上纯的二取代的铍化合物制备氧化铍膜。 本公开还涉及在各种应用中将氧化铍膜层沉积到表面上。

    SUBSTANTIALLY PURE DISUBSTITUTED BERYLLIUM COMPOUNDS AND USES THEREOF
    5.
    发明申请
    SUBSTANTIALLY PURE DISUBSTITUTED BERYLLIUM COMPOUNDS AND USES THEREOF 审中-公开
    大量分解的BALLLIUM化合物及其用途

    公开(公告)号：WO2013019849A2

    公开(公告)日：2013-02-07

    申请号：PCT/US2012/049141

    申请日：2012-08-01

    申请人： GRAPHEA, INC. ,  BIELAWSKI, Christopher, W. ,  HUDNALL, Todd ,  RONALTER, Michael

    发明人： BIELAWSKI, Christopher, W. ,  HUDNALL, Todd ,  RONALTER, Michael

    IPC分类号： C01F3/02 ,  C07F3/00 ,  B01J19/24

    CPC分类号： C07F3/006 ,  C01F3/02 ,  C23C16/403

    摘要： The disclosure relates to the preparation of substantially pure disubstituted beryllium compounds suitable for the preparation of semiconductive beryllium oxide films. In some embodiments, the purification of the disubstituted beryllium compounds is achieved with the aid of a sublimation vessel that provides uniform heating. The sublimation vessel, along with its heating chamber subassembly, is disclosed. In one embodiment, a beryllium oxide film is prepared from the substantially pure disubstituted beryllium compounds. The disclosure further relates to the deposition of beryllium oxide film layers onto surfaces in a variety of applications.

    摘要翻译： 本公开涉及制备适用于制备半导体铍氧化物膜的基本上纯的二取代铍化合物。 在一些实施方案中，二取代的铍化合物的纯化是借助于提供均匀加热的升华容器来实现的。 公开了升华容器及其加热室子组件。 在一个实施方案中，由基本上纯的二取代铍化合物制备氧化铍膜。 本公开还涉及在各种应用中将氧化铍膜层沉积到表面上。