公开(公告)号：WO2021195512A1

公开(公告)日：2021-09-30

申请号：PCT/US2021/024382

申请日：2021-03-26

Applicant: MENLO MICROSYSTEMS, INC.

Inventor： MINNICK, Andrew ,  KEIMEL, Christopher, F. ,  ZHU, Xu

IPC: B81B7/00 ,  B81C1/00 ,  B81B2201/014 ,  B81B7/0041 ,  B81C1/0015 ,  B81C1/00166 ,  B81C1/00182 ,  B81C1/00293 ,  H01H1/0237 ,  H01H2001/0052 ,  H01H49/00 ,  H01H59/0009 ,  H01L21/00

Abstract: A method of fabricating and packaging an ohmic micro-electro-mechanical system (MEMS) switch device may comprise constructing the switch device on an insulating substrate. The switch device may have contacts that consist of a platinum- group metal. The method may further comprise forming an oxidized layer of the platinum-group metal on an outer surface of each of the one or more contacts. The method may further comprise bonding an insulating cap to the insulating substrate, to hermetically seal the switch device. The bonding may occur in an atmosphere that has a proportion of oxygen within a range of 0.5% to 30%, such that, after the switch device has been hermetically sealed within the sealed cavity, an atmosphere within the sealed cavity has a proportion of oxygen within the range of 0.5% to 30%. The platinum-group metal may be ruthenium, and the oxidized layer of the platinum-group metal may be ruthenium dioxide.

公开(公告)号：WO2021140207A2

公开(公告)日：2021-07-15

申请号：PCT/EP2021/050283

申请日：2021-01-08

Applicant: NANUSENS SL

Inventor： MONTANYÀ SILVESTRE, Josep

IPC: B81C1/00 ,  B81B2201/0228 ,  B81B2201/0235 ,  B81B2203/0163 ,  B81B2203/053 ,  B81B2207/07 ,  B81B3/0021 ,  B81B7/0006 ,  B81C1/00142 ,  B81C1/00182 ,  B81C1/00325 ,  B81C2203/0714

Abstract: A MEMS device formed using the materials of the BEOL of a CMOS process where a post-processing of vHF and post backing was applied to form the MEMS device and where a total size of the MEMS device is between 50um and 150um. The MEMS device may be implemented as an inertial sensor among other applications.