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1.
公开(公告)号:WO2023088869A2
公开(公告)日:2023-05-25
申请号:PCT/EP2022/081910
申请日:2022-11-15
Applicant: MERCK PATENT GMBH
Inventor: LI, Zhong , WU, Hengpeng , CHEN, Chunwei , LIU, Weihong , CHEN, Hung-Yang
IPC: G03F7/022 , G03F7/023 , G03F7/027 , G03F7/032 , G03F7/033 , G03F7/038 , G03F7/039 , G03F7/085 , G03F7/16 , G03F7/0226 , G03F7/0233 , G03F7/0236 , G03F7/0382 , G03F7/0392
Abstract: One aspect of this invention is a photoresist composition comprising a thiol derivatives where the thiol moiety is attached to an SP2 carbon which is part of ring which has structures (H1), (H2) (H3), or (H4), and where this thiol additive is present in a range of about 0.5 wt. % to about 3 wt. % of total solids. Another aspect of this invention is to use this photoresist composition on a metal substrate a patterned photoresist which is use as a etch mask in anisotropic wet chemical etching of the metal substate to produce a patterned metallic substrate. Yet Another aspect of this invention is a composition which comprises the above-described thiol derivatives in a spin casting solution and the process of treating a metal substrate which allows overlaid patterned photo resist to be used as an etch mask for wet chemical etching to affect anisotropic etching of the metal substate to also generate patterned metallic substate.
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公开(公告)号:WO2022072275A1
公开(公告)日:2022-04-07
申请号:PCT/US2021/052183
申请日:2021-09-27
Applicant: ILLUMINA, INC.
Inventor: HONG, Sahngki , KRAFT, Lewis J.
IPC: B01J19/00 , B01L3/00 , C12Q1/68 , G01N21/05 , B01J19/0046 , B01J2219/00317 , B01J2219/00608 , B01J2219/00619 , B01J2219/00621 , B01J2219/00722 , G01N2021/7763 , G03F7/0382 , G03F7/0392 , G03F7/2002 , G03F7/2043 , G03F7/343 , G03F7/38
Abstract: An example flow cell includes a multi-layer stack including a transparent base support; a patterned sacrificial layer over the transparent base support; and a transparent layer over the patterned sacrificial layer. The flow cell further includes first and second functionalized layers over different portions of the transparent layer, wherein at least one of the first and second functionalized layers aligns with a pattern of the patterned sacrificial layer; and first and second primer sets respectively attached to the first and second functionalized layer.
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3.
公开(公告)号:WO2022272226A1
公开(公告)日:2022-12-29
申请号:PCT/US2022/072986
申请日:2022-06-16
Applicant: HERAEUS EPURIO LLC
Inventor: SHARMA, Ram B. , ZHANG, Yongqiang , JEWETT, Kyle , SAKAVUYI, Kaumba
IPC: C07C381/00 , G03F7/038 , G03F7/039 , C07C2602/42 , C07C309/10 , C07D327/06 , G03F7/0045 , G03F7/0046 , G03F7/0382 , G03F7/0392 , G03F7/0397
Abstract: A sulfonic acid derivative compound represented by Formula (I): (Formula (I)), wherein R is a substituted or unsubstituted C1-C12 alkyl group; and Z is selected from the group consisting of a substituted or unsubstituted polycyclic C3-C30 cycloalkyl group, a substituted or unsubstituted monocyclic C3-C30 cycloalkyl group, and a substituted or unsubstituted C3-C30 monocyclic heteroalkyl group. Compounds and compositions disclosed herein are useful as photoactive components in chemically amplified resist compositions for various microfabrication applications.
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公开(公告)号:WO2021144582A1
公开(公告)日:2021-07-22
申请号:PCT/GB2021/050091
申请日:2021-01-15
Applicant: LINTFIELD LIMITED , TOKYO ELECTRON LIMITED
Inventor: WALL, Christopher , DINH, Cong-Que , NAGAHARA, Seiji
IPC: C07D335/16 , C07D495/10 , C07D519/00 , G03F7/00 , G03F7/0045 , G03F7/027 , G03F7/031 , G03F7/038 , G03F7/0392 , G03F7/168
Abstract: Latent photoinitiator compounds are described, as well as compositions containing such compounds and their uses in photoinitated methods for producing photoresist structured.
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