公开(公告)号：WO2021167724A2

公开(公告)日：2021-08-26

申请号：PCT/US2021/013760

申请日：2021-01-15

申请人： SLT TECHNOLOGIES, INC.

发明人： CARDWELL, Drew W. ,  D'EVELYN, Mark P.

IPC分类号： H01L31/0232 ,  H01L31/0304 ,  H01L31/036 ,  H01L31/054 ,  H01L31/0693 ,  H01L31/105 ,  G02B6/10 ,  G02B6/00 ,  H01L31/02327 ,  H01L31/03044 ,  H01L31/03048

摘要： According to the present disclosure, techniques related to manufacturing and applications of power photodiode structures and devices based on group-Ill metal nitride and gallium-based substrates are provided. More specifically, embodiments of the disclosure include techniques for fabricating photodiode devices comprising one or more of GaN, AIN, InN, InGaN, AIGaN, and AllnGaN, structures and devices. Such structures or devices can be used for a variety of applications including optoelectronic devices, photodiodes, power-over-fiber receivers, and others.

公开(公告)号：WO2022212485A1

公开(公告)日：2022-10-06

申请号：PCT/US2022/022521

申请日：2022-03-30

申请人： RAYTHEON COMPANY

发明人： DEJARLD, Matthew, T. ,  LAROCHE, Jeffrey, R. ,  LONG, Clay, T. ,  SOIREZ, Lovelace, J.

IPC分类号： H01L31/0304 ,  H01L27/144 ,  H01L31/09 ,  H01L31/03044

摘要： An integrated circuit structure comprising a substrate having an upper surface; a gallium nitride layer disposed on the upper surface of the substrate; and a photoconductive semiconductor switch laterally disposed alongside a transistor on the gallium nitride layer integrated into the integrated circuit structure.

公开(公告)号：WO2022212487A1

公开(公告)日：2022-10-06

申请号：PCT/US2022/022523

申请日：2022-03-30

申请人： RAYTHEON COMPANY

发明人： DEJARLD, Matthew, T. ,  LAROCHE, Jeffrey, R. ,  LONG, Clay, T. ,  SOIREZ, Lovelace, J.

IPC分类号： H01L31/09 ,  H01L31/0304 ,  H01L27/144 ,  H01L27/146 ,  H01L31/02019 ,  H01L31/03044 ,  H01L31/1035

摘要： An integrated circuit structure comprising a substrate having an upper surface; a gallium nitride layer disposed on the upper surface of the substrate; and a photoconductive semiconductor switch laterally disposed alongside a transistor on the gallium nitride layer integrated into the integrated circuit structure wherein a regrown gallium nitride material is disposed on the photoconductive semiconductor switch and operatively coupled with the wafer.

公开(公告)号：WO2021142319A1

公开(公告)日：2021-07-15

申请号：PCT/US2021/012772

申请日：2021-01-08

申请人： ARRAY PHOTONICS, INC. ,  MAROS, Aymeric

发明人： SUAREZ, Ferran ,  LIEBOWITZ, Jay

IPC分类号： H01L31/0304 ,  H01L31/055 ,  H01L31/101 ,  H01L31/105 ,  H01L31/107 ,  H01L31/18 ,  H01L27/1446 ,  H01L31/02162 ,  H01L31/02322 ,  H01L31/03044 ,  H01L31/03048 ,  H01L31/1013 ,  H01L31/1075 ,  H01L31/1848 ,  H01L31/1852 ,  H01L31/1856

摘要： Broadband photodetectors, detector arrays, sensors and systems, capable of detection and sensing ultraviolet (UV), visible (VIS) and shortwave infrared (8WTR) wavelengths of light, are disclosed. The devices may operate over a wavelength range between about 0.2 μm and 1.8 μm. in particular, the devices include a dilute nitride active layer with a bandgap within a range from 0.7 eV and 1 eV and a luminescent layer.