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公开(公告)号:WO2023059457A1
公开(公告)日:2023-04-13
申请号:PCT/US2022/044630
申请日:2022-09-23
Applicant: APPLIED MATERIALS, INC.
Inventor: WU, Chung-Chih , CHEN, Po-Jui , LIN, Hoang Yan , SU, Guo-Dong , LEE, Wei-Kai , CHANG, Chi-Jui , LIN, Wan-Yu , KWAK, Byung Sung , VISSER, Robert Jan
IPC: H10K50/80 , H10K71/00 , H10K50/858 , H10K50/865
Abstract: Exemplary subpixel structures include a directional light-emitting diode structure characterized by a full-width-half-maximum (FWHM) of emitted light having a divergence angle of less than or about 10°. The subpixel structure further includes a lens positioned a first distance from the light-emitting diode structure, where the lens is shaped to focus the emitted light from the light-emitting diode structure. The subpixel structure still further includes a patterned light absorption barrier positioned a second distance from the lens. The patterned light absorption barrier defines an opening in the barrier, and the focal point of the light focused by the lens is positioned within the opening. The subpixels structures may be incorporated into a pixel structure, and pixel structures may be incorporated into a display that is free of a polarizer layer.
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公开(公告)号:WO2023059456A1
公开(公告)日:2023-04-13
申请号:PCT/US2022/044629
申请日:2022-09-23
Applicant: APPLIED MATERIALS, INC.
Inventor: WU, Chung-Chih , CHEN, Po-Jui , LIN, Hoang Yan , SU, Guo-Dong , LEE, Wei-Kai , LIN, Wan-Yu , KWAK, Byung Sung , VISSER, Robert Jan , CHANG, Chi-Jui
IPC: H01L27/15 , H01L33/58 , H01L25/075 , H01L33/50 , H10K2102/351 , H10K50/85 , H10K50/865 , H10K59/38 , H10K71/00
Abstract: A light-emitting pixel structure is described that may include a group of light-emitting diode structures, where each of the light-emitting diode structures is operable to emit light characterized by a different peak emission wavelength. The structures may also include a patterned light absorption barrier characterized by a group of openings in the barrier, where each of the openings permit a transmission of a portion of the light from one of the light-emitting diode structures through the barrier. The structures may further include a metasurface layer operable to change a direction of at least some of the light transmitted through the openings of the patterned light absorption barrier from the light-emitting diode structures.
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