Abstract:
An organic light-emitting diode (OLED) device includes a substrate, a well structure on the substrate with the well structure having a recess with side walls and a floor, a lower metal layer covering the floor and side-walls of the well, an upper conductive layer on the lower metal layer covering the floor of the well and contacting the lower metal layer, the upper conductive layer having outer edges at about an intersection of the side walls and the floor, a dielectric layer formed of an oxide of the lower metal layer covering the side walls of the well without covering the upper conductive layer, a stack of OLED layers covering at least the floor of the well, the upper conductive layer providing an electrode for the stack of OLED layers, and a light extraction layer (LEL) in the well over the stack of OLED layers and the dielectric layer.
Abstract:
Embodiments described herein relate to graded slope bottom reflective electrode layer structures for top-emitting organic light-emitting diode (OLED) display pixels. An EL device includes a pixel definition layer having a top surface, a bottom surface, and graded sidewalls interconnecting the top and bottom surfaces and a bottom reflective electrode layer disposed over the pixel definition layer. The bottom reflective electrode layer includes a planar electrode portion disposed over the bottom surface and a graded reflective portion disposed over the graded sidewalls, where the graded reflective portion has a non-linear profile. The EL device includes an organic layer disposed over the bottom reflective electrode layer and a top electrode disposed over the organic layer. Also described herein are methods for fabricating the EL device.
Abstract:
An organic light-emitting diode (OLED) structure includes a stack of OLED layers; a light extraction layer (LEL) comprising a UV-cured ink; and a UV blocking layer between the LEL and the stack of OLED layers.
Abstract:
Exemplary subpixel structures include a directional light-emitting diode structure characterized by a full-width-half-maximum (FWHM) of emitted light having a divergence angle of less than or about 10°. The subpixel structure further includes a lens positioned a first distance from the light-emitting diode structure, where the lens is shaped to focus the emitted light from the light-emitting diode structure. The subpixel structure still further includes a patterned light absorption barrier positioned a second distance from the lens. The patterned light absorption barrier defines an opening in the barrier, and the focal point of the light focused by the lens is positioned within the opening. The subpixels structures may be incorporated into a pixel structure, and pixel structures may be incorporated into a display that is free of a polarizer layer.
Abstract:
A light-emitting pixel structure is described that may include a group of light-emitting diode structures, where each of the light-emitting diode structures is operable to emit light characterized by a different peak emission wavelength. The structures may also include a patterned light absorption barrier characterized by a group of openings in the barrier, where each of the openings permit a transmission of a portion of the light from one of the light-emitting diode structures through the barrier. The structures may further include a metasurface layer operable to change a direction of at least some of the light transmitted through the openings of the patterned light absorption barrier from the light-emitting diode structures.
Abstract:
Embodiments of the present disclosure generally relate to electroluminescent devices, such as organic light-emitting diodes, and displays including electroluminescent devices. In an embodiment is provided an electroluminescent device that includes a pixel defining layer, an organic emitting unit disposed over at least a portion of the pixel defining iayer, and a filler layer disposed over at least a portion of the organic emitting unit, wherein a refractive index of the pixel defining iayer is iower than a refractive index of the filler Iayer, and wherein the refractive index of the pixel defining Iayer is Iower than a refractive index of one or more layers of the organic emitting unit, in another embodiment is provided a display device that includes a substrate, a thin film transistor formed on the substrate, an interconnection electrically coupled to the thin film transistor, and an electroluminescent device electrically coupled to the interconnection.
Abstract:
An organic light-emitting diode (OLED) structure including a substrate; a dielectric layer on the substrate having an array of well structures, wherein each well structure includes a recess with side walls and a floor, and the well structures are separated by plateaus; a stack of OLED layers covering at least the floor of the well; a light extraction layer (LEL) in the well over the stack of OLED layers; and a coating covering a portion of the stack of OLED layers such that a top surface of the plateaus is more hydrophobic than a surface in the well on which the light extraction layer is formed.
Abstract:
Embodiments of the disclosure generally provide methods of forming a capacitor with high capacitance and low leakage as well as a good interface control for thin film transistor (TFT) applications. In one embodiment, a thin film transistor structure includes a capacitor formed in a thin film transistor device. The capacitor further includes a common electrode disposed on a substrate, a dielectric layer formed on the common electrode and a pixel electrode formed on the dielectric layer. An interface protection layer formed between the common electrode and the dielectric layer, or between the dielectric layer and the pixel electrode. A gate insulating layer fabricated by a high-k material may also be utilized in the thin film transistor structure.
Abstract:
A method of manufacturing a layer for a plurality of thin film transistors for display manufacturing and an apparatus therefore is described. The method includes sputtering a transparent conductive oxide layer from an indium oxide containing target in a processing gas atmosphere. The processing gas atmosphere (222) comprises water vapor, H 2 , and an inert gas, wherein the content of water vapor is from 1% to 10%, wherein the content of H 2 is from 2.2% to 20.0%, and wherein the content of inert gas is from 55.0% to 96.3 %. The apparatus (200) includes a vacuum chamber (210); one or more indium oxide containing targets (220a, 220b) within the vacuum chamber for sputtering a transparent conductive oxide layer; a gas distribution system (230) for providing a processing gas within the vacuum chamber; and a controller (240) connected to the gas distribution system and configured to execute a program code for conducting the method.
Abstract:
The present disclosure is generally related to 3D imaging capable OLED displays. A light field display comprises an array of 3D light field pixels, each of which comprises an array of corrugated OLED pixels, a metasurface layer disposed adjacent to the array of 3D light field pixels, and a plurality of median layers disposed between the metasurface layer and the corrugated OLED pixels. Each of the corrugated OLED pixels comprises primary or non-primary color subpixels, and produces a different view of an image through the median layers to the metasurface to form a 3D image. The corrugated OLED pixels combined with a cavity effect reduce a divergence of emitted light to enable effective beam direction manipulation by the metasurface. The metasurface having a higher refractive index and a smaller filling factor enables the deflection and direction of the emitted light from the corrugated OLED pixels to be well controlled.