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1.
公开(公告)号:WO2023088859A1
公开(公告)日:2023-05-25
申请号:PCT/EP2022/081875
申请日:2022-11-15
发明人: HALBRITTER, Hubert , RUSSELL, Ann
摘要: A semiconductor laser device is specified, the semiconductor laser device comprising an active layer having a main extension plane, a first cladding layer and a second cladding layer, the active layer being arranged between the first and second cladding layer in a direction perpendicular to the main extension plane, a light-outcoupling surface parallel to the main extension direction and arranged on a side of the second cladding layer opposite to the active layer, a photonic crystal layer arranged in the first cladding layer or in the second cladding layer, and an integrated optical element directly fixed to the light-outcoupling surface. Furthermore, a method for manufacturing a semiconductor laser device and a projection device are specified.
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公开(公告)号:WO2023018371A2
公开(公告)日:2023-02-16
申请号:PCT/SG2022/050561
申请日:2022-08-05
发明人: SORG, Jörg Erich , BERNHARD, Stefan
IPC分类号: H01S5/40 , H01S5/0239 , H01S5/024 , H01S5/0234 , H01S5/00 , H01S5/02 , H01S5/02208 , H01S5/10 , H01S2301/176 , H01S5/0217 , H01S5/02255 , H01S5/02315 , H01S5/02326 , H01S5/02345 , H01S5/02476 , H01S5/04256 , H01S5/1039 , H01S5/4031 , H01S5/4043 , H01S5/4087
摘要: A laser component (20) is provided, the laser component (20) comprising at least one first laser diode (21), and at least one second laser diode (22), the first laser diode (21) and the second laser diode (22) each comprising an active zone (23) in a semiconductor layer (24), the active zones (23) each extend parallel to the main plane of extension of the respective laser diode (21, 22), the semiconductor layers (24) each comprise a first side (25) and a second side (26) facing away from the first side (25), the first side (25) and the second side (26) each extending parallel to the main plane of extension of the respective laser diode (21, 22), the second laser diode (22) being arranged on the first laser diode (21) in a vertical direction (z) which is perpendicular to the main plane of extensions of the laser diodes (21, 22), the first laser diode (21) having a larger extent in its main plane of extension than the second laser diode (22) in its main plane of extension and at least one electrical contact (28) is arranged in a contact region (27) of the first laser diode (21) which is arranged on the side of the first laser diode (21) facing the second laser diode (22). A laser device (38) is also disclosed.
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公开(公告)号:WO2023009324A1
公开(公告)日:2023-02-02
申请号:PCT/US2022/037073
申请日:2022-07-14
发明人: WITHMORE, Alexander Jason , DANIEL, Brian Adam , LANOVAZ, Marcus Daniel , ROWLETTE, John Robert Jr.
IPC分类号: H01S5/00 , H01S5/02 , H01S5/02216 , H01S5/02325 , H01S5/40 , H01S3/1055 , H01S5/024 , H01S5/14 , H01S5/34
摘要: A laser assembly (10) for generating an output beam (12) includes: (i) a first laser (16) that generates a first laser beam (16A) having a first polarization state; (ii) a second laser (20) that generates a second laser beam (20A); (iii) a polarization beam combiner (24) that combines the first laser beam (16A) and the rotated second laser beam (20A) to form a combination beam (25); and (iv) an optical assembly (32) that expands and collimates the combination beam (25) to provide the output beam (12). The optical assembly (32) include an on-axis telescope plus a projection lens.
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公开(公告)号:WO2023283769A1
公开(公告)日:2023-01-19
申请号:PCT/CN2021/105789
申请日:2021-07-12
申请人: 广东粤港澳大湾区硬科技创新研究院
摘要: 一种激光合束装置(100)及其组合式阶梯反射镜(20),激光合束装置(100)包括二维发光阵列(10)和组合式阶梯反射镜(20),组合式阶梯反射镜(20)用于反射由二维发光阵列(10)发射的多个激光束,组合式阶梯反射镜(20)由长度相同但宽度逐渐增大的多个反射镜(21,22)依次叠合组成,其中经组合式阶梯反射镜(20)反射后的激光束的中心距离比入射前的中心距离小,以此能够提高二维发光阵列(10)发射的激光束的填充率;还提供了一种激光合束装置(100)的填充率计算方法,根据激光芯片的光斑宽度,预设反射镜的厚度,从而求得组合式阶梯反射镜(20)的阶梯宽度,最终计算得出激光束的填充率,提供了工程应用的计算方法。
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公开(公告)号:WO2022245236A1
公开(公告)日:2022-11-24
申请号:PCT/RU2021/000204
申请日:2021-05-20
摘要: According to an aspect, there is provided an optical memory unit. The optical memory unit comprises first and second slave lasers configured, respectively, to output first and second laser beams having a first frequency when injection-locked with first and second injection laser beams having the first frequency. The first and second slave lasers are configured to be mutually coupled and the optical memory unit is configured so that an optical path length between the first and second slave lasers corresponds to a phase shift of at the first frequency. Said injection-locking enables maintaining, at a time, one of two steady states when the first and second injection beams have the same amplitude and phase while switching between the two steady states is enabled by introducing an amplitude and phase or amplitude and polarization perturbation component to at least one of the first and second injection laser beams.
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公开(公告)号:WO2022231991A1
公开(公告)日:2022-11-03
申请号:PCT/US2022/026078
申请日:2022-04-23
摘要: A visible light source (1802) includes a substrate, a first reflector (1822) and a second reflector (1830) configured to reflect infrared light and arranged vertically to form a vertical cavity on the substrate, an active region (1824) in the vertical cavity and configured to emit infrared light, a micro-resonator (1850, 1860, 1870) on the substrate and configured to receive the infrared light emitted by the active region and generate visible light through optical parametric oscillation, and an output coupler (1852, 1862, 1872) configured to couple the visible light generated in the micro-resonator out of the micro-resonator.
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公开(公告)号:WO2022223365A2
公开(公告)日:2022-10-27
申请号:PCT/EP2022/059729
申请日:2022-04-12
发明人: HALBRITTER, Hubert , RUSSEL, Ann
IPC分类号: H01S5/11 , H01S5/026 , H01S5/187 , H01S5/00 , H01S5/40 , H01S5/42 , G02B27/48 , G03B21/20 , H04N9/31 , H01S5/042 , G02B1/005 , G02B26/101 , G02B27/281 , G03B21/2033 , H01S5/0071 , H01S5/34 , H01S5/4012 , H01S5/4075 , H01S5/4087 , H01S5/4093 , H04N9/3129 , H04N9/3164
摘要: A semiconductor laser device comprises an active layer having a main extension plane, a first cladding layer and a second cladding layer where the active layer is arranged between the first and second cladding layer in a direction perpendicular to the main extension plane, at least one first emission region and at least one second emission region arranged next to each other in a direction parallel to the main extension plane, a light-outcoupling surface parallel to the main extension direction and arranged on a side of the second cladding layer opposite to the active layer, and a photonic crystal layer arranged in the first cladding layer or in second cladding layer. The photonic crystal layer may include a first photonic crystal structure in the first emission region and a second photonic crystal structure in the second emission region where the first and the second photonic crystal structures are different.
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8.
公开(公告)号:WO2022161714A1
公开(公告)日:2022-08-04
申请号:PCT/EP2021/087302
申请日:2021-12-22
发明人: HALBRITTER, Hubert , KREINER, Laura
IPC分类号: H01S5/11 , H01S5/185 , H01S5/02 , H01S5/0234 , H01S5/042 , H01S5/42 , H01S5/20 , H01S5/343 , H01S5/30 , H01S5/028 , H01S5/00 , H01S5/40
摘要: Ein oberflächenemittierender Halbleiterlaser (10) umfasst eine erste Halbleiterschicht (110) von einem ersten Leitfähigkeitstyp, eine aktive Zone (115), die geeignet ist, elektromagnetische Strahlung (20) zu erzeugen, eine geordnete photonische Struktur (132) und eine zweite Halbleiterschicht (120) von einem zweiten Leitfähigkeitstyp. Die aktive Zone (115) ist zwischen der ersten und der zweiten Halbleiterschicht (110, 120) angeordnet. Die geordnete photonische Struktur (132) ist in der ersten Halbleiterschicht (110) ausgebildet, und ein Teil der ersten Halbleiterschicht (110) grenzt an beide Seiten der geordneten photonischen Struktur (132) an. Alternativ ist die geordnete photonische Struktur (132) in einer zusätzlichen Halbleiterschicht (130) zwischen der aktiven Zone (115) und der zweiten Halbleiterschicht (120) angeordnet. Ein Teil der zusätzlichen Halbleiterschicht (130) ist zwischen der geordneten photonischen Struktur (132) und der zweiten Halbleiterschicht (120) angeordnet.
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公开(公告)号:WO2022135701A1
公开(公告)日:2022-06-30
申请号:PCT/EP2020/087672
申请日:2020-12-22
发明人: GALLET, Antonin , BRENOT, Romain
IPC分类号: H01S5/50 , H04B10/291 , H01S5/00 , H01S5/0683
摘要: Described is an optical amplifier comprising a polarization beam splitter (PBS) (303) arranged to receive an optical beam and to split it into a first beam and a second beam, the first beam being transverse magnetic (TM), the second beam being transverse electric (TE); a first amplifier channel (350) arranged to receive the first beam and to amplify it; a second amplifier channel (351) arranged to receive the second beam and to amplify it; and a polarization beam combiner (PBC) (304) arranged to combine an output beam of the first amplifier channel (350) and an output beam of the second amplifier channel (351). The first amplifier (350) channel comprises: (i) a TM-to-TE-mode converter (352) arranged to receive the first beam and to convert it from TM to TE; and (ii) a first amplifier arrangement (305, 306, 307) arranged to receive an output beam of the TM-to-TE-mode converter and to apply an adjustable amplification to it. The second amplifier channel comprises: (i) a second amplifier arrangement (308, 309, 310) arranged to receive the second beam and to apply an adjustable amplification to it; and (ii) a TE-to-TM-mode converter (353) configured to convert an output beam of the second amplifier arrangement from TE to TM. This may result in an optical amplifier with decreased polarization dependent loss.
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公开(公告)号:WO2022095168A1
公开(公告)日:2022-05-12
申请号:PCT/CN2020/132304
申请日:2020-11-27
申请人: 苏州镭智传感科技有限公司
发明人: 梁伟
摘要: 一种激光芯片,包括光模块;光模块集成在激光芯片上;光模块包括:第一激光器、调制单元、第二激光器、第一耦合单元和第二耦合单元;第一激光器设置为输出激光光束;第一耦合单元设置于第一激光器和调制单元之间,并设置为将激光光束耦合至调制单元;调制单元设置为根据线性调频微波信号和激光光束产生单级或多级的调制边带;第二耦合单元设置于调制单元和第二激光器之间,并设置为将调制边带耦合至第二激光器;第二激光器设置为根据调制边带输出线性调频激光;线性调频激光的频率与调制边带的一个边带的频率相关。
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