US08680580B2
A field effect transistor includes: a channel layer 103 containing GaN or InGaN; a first electron-supplying layer 104 disposed over the channel layer 103 and containing InxAlyGa1-x-yN (0≦x<1, 0
US08680575B2
Embodiments of the present invention describe a semiconductor device having an buffer structure and methods of fabricating the buffer structure. The buffer structure is formed between a substrate and a quantum well layer to prevent defects in the substrate and quantum well layer due to lattice mismatch. The buffer structure comprises a first buffer layer formed on the substrate, a plurality of blocking members formed on the first buffer layer, and second buffer formed on the plurality of blocking members. The plurality of blocking members prevent the second buffer layer from being deposited directly onto the entire first buffer layer so as to minimize lattice mismatch and prevent defects in the first and second buffer layers.
US08680572B2
Some embodiments provide a microdisplay integrated circuit (IC), a substantially transparent protective cover coupled to the microdisplay IC, and a base coupled to the microdisplay IC. Thermal expansion characteristics of the base may be substantially similar to thermal expansion characteristics of the protective cover. According to some embodiments, at least one set of imaging elements is fabricated on an upper surface of a semiconductor substrate, and a base is affixed to a lower surface of the semiconductor substrate to generate substantially negligible mechanical stress between the semiconductor substrate and the base.
US08680568B2
A semiconductor light-emitting device includes a lead frame, a semiconductor light-emitting element mounted on the top surface of the bonding region, and a case covering part of the lead frame. The bottom surface of the bonding region is exposed to the outside of the case. The lead frame includes a thin extension extending from the bonding region and having a top surface which is flush with the top surface of the bonding region. The thin extension has a bottom surface which is offset from the bottom surface of the bonding region toward the top surface of the bonding region.
US08680557B2
A method for producing a light emitting diode device includes the steps of preparing a phosphor layer formed in a sheet state; forming a light semiconductor layer on one surface in a thickness direction of the phosphor layer; forming an electrode portion on one surface of the light semiconductor layer; forming an encapsulating resin layer containing a light reflecting component so as to cover the light semiconductor layer and the electrode portion; producing the light emitting diode element by partially removing the encapsulating resin layer so as to expose one surface of the electrode portion; and allowing the electrode portion to be electrically connected to the terminal, so that the light emitting diode element is flip-chip mounted on the base board.
US08680550B2
A wavelength-converted light emitting diode (LED) chip is provided. The wavelength-converted LED chip includes an LED chip and a wavelength-converted layer. The LED chip emits light in a predetermined wavelength region. The wavelength-converted layer is formed of a resin containing phosphor bodies of at least one kind which convert a portion of the light emitted from the LED chip into light in a different wavelength region. The wavelength-converted layer is formed on an upper surface of the LED chip, and has a convex meniscus-shaped upper surface.
US08680542B2
An organic light-emitting element includes a reflective anode, a first functional layer, an organic light-emitting layer that emits blue light, a second functional layer, a transparent cathode, and a coating layer. An optical thickness of the first functional layer is greater than 0 nm but not greater than 316 nm. A difference in refractive index between the transparent cathode and either a layer adjacent to the transparent cathode within the second functional layer or a layer adjacent to the transparent cathode within the coating layer is from 0.1 to 0.7 inclusive. The transparent cathode has a physical thickness greater than 0 nm but not greater than 70 nm, a refractive index from 2.0 to 2.4 inclusive, and an optical thickness greater than 0 nm but not greater than 168 nm.
US08680541B2
Disclosed is a light-emitting diode structure comprises a substrate, a plurality of light-emitting diodes on the substrate, and a conductive layer laid on the surface thereof. Each light-emitting diode comprises at least an electrical coupling side close to another electrical coupling side of an adjacent light-emitting diode. Each light-emitting diode comprises at least a first and a second electrode on the surface along the electrical coupling side, so that two close first or second electrodes can be soldered at the same time in wire soldering process, so as to make the light-emitting diodes connect in parallel. One end of the conductive layer is connected to the first electrode of a light-emitting diode and the other end is close to the second electrode of another light-emitting diode, so that the second electrode and the conductive layer can be soldered at the same time in wire soldering process, so as to make the light-emitting diodes connect in series.
US08680535B2
A HEMT includes a silicon substrate, an unintentionally doped gallium nitride (UID GaN) layer over the silicon substrate, a donor-supply layer over the UID GaN layer, a gate structure, a drain, and a source over the donor-supply layer, and a passivation material layer having one or more buried portions contacting or almost contacting the UID GaN layer. A carrier channel layer at the interface of the donor-supply layer and the UID GaN layer has patches of non-conduction in a drift region between the gate and the drain. A method for making the HEMT is also provided.
US08680534B2
A vertical light-emitting diode (VLED) includes a metal substrate, a p-electrode coupled to the metal substrate, a p-contact coupled to the p-electrode, a p-GaN portion coupled to the p-electrode, an active region coupled to the p-GaN portion, an n-GaN portion coupled to the active region, and a phosphor layer coupled to the n-GaN portion.
US08680533B2
A light-emitting device operating on a high drive voltage and a small drive current. LEDs (1) are two-dimensionally formed on an insulating substrate (10) of e.g., sapphire monolithically and connected in series to form an LED array. Two such LED arrays are connected to electrodes (32) in inverse parallel. Air-bridge wiring (28) is formed between the LEDs (1) and between the LEDs (1) and electrodes (32). The LED arrays are arranged zigzag to form a plurality of LEDs (1) to produce a high drive voltage and a small drive current. Two LED arrays are connected in inverse parallel, and therefore an AC power supply can be used as the power supply.
US08680530B2
An array substrate for a display device includes: a substrate; first and second gate electrodes of impurity-doped polycrystalline silicon on the substrate; a gate insulating layer on the first and second gate electrodes; first and second active layers of intrinsic polycrystalline silicon on the gate insulating layer, the first and second active layers corresponding to the first and second active layers, respectively; an interlayer insulating layer on the first and second active layers and including first to fourth active contact holes, the first and second active contact holes exposing side portions of the first active layer, the third and fourth active contact holes exposing side portions of the second active layer; first and second ohmic contact layers of impurity-doped amorphous silicon on the interlayer insulating layer, the first ohmic contact layer contacting the first active layer through the first and second active contact holes, the second ohmic contact layer contacting the second active layer through the third and fourth active contact hole; first source and drain electrodes on the first ohmic contact layer and second source and drain electrodes on the second ohmic contact layer; a data line on the interlayer insulating layer, the data line connected to the first source electrode; a first passivation layer on the first source and drain electrodes, the second source and drain electrodes and the data line; a gate line on the first passivation layer, the gate line connected to the first gate electrode and crossing the data line to define a pixel region; a second passivation layer on the gate line; and a pixel electrode on the second passivation layer, the pixel electrode connected to the second drain electrode.
US08680526B2
An electronic device includes: a substrate; a lower electrode which is provided on the substrate and has an edge portion cross-section having a taper angle of 60° or less; a SiO2 film which is provided on the lower electrode, the SiO2 film including hydrogen atoms in a ratio of 3 atomic % or less, and having a refractive index n of 1.475 or less at a wavelength of 650 nm; and an upper electrode which is provided on the SiO2 film and has an overlapping portion with the lower electrode.
US08680523B2
The present invention provides in-situ positioning of a sensor within each functional block, as well as at critical locations, of a semiconductor system. Sensor quantity and location is optimized for maximum sensitivity to known process variations. The sensor models a behavior of the location in which it is positioned and comprises a plurality of stages connected as a network and a self-digitizer. Each sensor has a mode selection input for selecting a mode thereof and an operational trigger input for enabling the sensor to model the behavior. The model selection input and operation trigger enable the sensor to have an operational mode in which the plurality of sensors are subject to an aging process, as well as a measurement mode in which an age of the plurality of sensors is outputted. Based on the output, one or more functional blocks are modified to reduce semiconductor system gradation in real-time.
US08680522B2
An oxide semiconductor film which has more stable electric conductivity is provided. Further, a semiconductor device which has stable electric characteristics and high reliability is provided by using the oxide semiconductor film. An oxide semiconductor film includes a crystalline region, and the crystalline region includes a crystal in which an a-b plane is substantially parallel with a surface of the film and a c-axis is substantially perpendicular to the surface of the film; the oxide semiconductor film has stable electric conductivity and is more electrically stable with respect to irradiation with visible light, ultraviolet light, and the like. By using such an oxide semiconductor film for a transistor, a highly reliable semiconductor device having stable electric characteristics can be provided.
US08680519B1
A cuttable organic light emitting diode (OLED) light source device is provided, including a lower substrate, a plurality of OLED modules disposed on the lower substrate and arranged in a matrix, a plurality of sensing electrodes disposed on respective OLED modules for sensing an external magnetic field in order to provide power to the OLED modules, and an upper substrate disposed on the OLED modules and the sensing electrodes. The present disclosure independently provides power to each OLED module through the sensing electrodes, and allows the cuttable OLED light source device with wireless transmission to arbitrarily cut into different shapes, so that the service life and light emitting performance are not affected by the cutting.
US08680516B2
The present invention discloses a packaging structure and method for organic light emitting devices, in which the packaging structure comprises a substrate; an OLED device, which disposing on the substrate; a first transparent protection layer, which forming on the OLED device; and a second transparent protection layer, which forming on the first transparent protection layer.
US08680514B2
An electric energy generator may include a semiconductor layer and a plurality of nanowires having piezoelectric characteristics. The electric energy generator may convert optical energy into electric energy if external light is applied and may generate piezoelectric energy if external pressure (e.g., sound or vibration) is applied.
US08680512B2
A transistor structure is provided which includes a graphene layer located on an insulating layer, a first metal portion overlying a portion of the graphene layer, a second metal portion contacting and overhanging the first metal portion, a first electrode contacting a portion of the graphene layer and laterally offset from a first sidewall of the first metal portion by a lateral spacing, and a second electrode contacting another portion of the graphene layer and laterally offset from a second sidewall of the first metal portion by the lateral spacing.
US08680511B2
A silicon nitride layer is provided on an uppermost surface of a graphene layer and then a hafnium dioxide layer is provided on an uppermost surface of the silicon nitride layer. The silicon nitride layer acts as a wetting agent for the hafnium dioxide layer and thus prevents the formation of discontinuous columns of hafnium dioxide atop the graphene layer. The silicon nitride layer and the hafnium dioxide layer, which collectively form a low EOT bilayer gate dielectric, exhibit continuous morphology atop the graphene layer.
US08680509B2
A nitride semiconductor device is provided, in which a superlattice strain buffer layer using AlGaN layers having a low Al content or GaN layers is formed with good flatness, and a nitride semiconductor layer with good flatness and crystallinity is formed on the superlattice strain buffer layer. A nitride semiconductor device includes a substrate; an AlN strain buffer layer made of AlN formed on the substrate; a superlattice strain buffer layer formed on the AlN strain buffer layer; and a nitride semiconductor layer formed on the superlattice strain buffer layer, and is characterized in that the superlattice strain buffer layer has a superlattice structure formed by alternately stacking first layers made of AlxGa1-xN (0≦x≦0.25), which further contain p-type impurity, and second layers made of AlN.
US08680507B1
A DBR/gallium nitride/aluminum nitride base grown on a silicon substrate includes a Distributed Bragg Reflector (DBR) positioned on the silicon substrate. The DBR is substantially crystal lattice matched to the surface of the silicon substrate. A first layer of III-N material is positioned on the surface of the DBR, an inter-layer of aluminum nitride (AlN) is positioned on the surface of the first layer of III-N material and an additional layer of III-N material is positioned on the surface of the inter-layer of aluminum nitride. The inter-layer of aluminum nitride and the additional layer of III-N material are repeated n-times to reduce or engineer strain in a final III-N layer.
US08680504B2
A method of forming a phase-change random access memory (PRAM) cell, and a structure of a phase-change random access memory (PRAM) cell are disclosed. The PRAM cell includes a bottom electrode, a heater resistor coupled to the bottom electrode, a phase change material (PCM) thrilled over and coupled to the heater resistor, and a top electrode coupled to the phase change material. The phase change material contacts a portion of a vertical surface of the heater resistor and a portion of a horizontal surface of the heater resistor to form an active region between the heater resistor and the phase change material.
US08680495B1
Techniques are described that enhance power from an extreme ultraviolet light source with feedback from a target material that has been modified prior to entering a target location into a spatially-extended target distribution or expanded target. The feedback from the spatially-extended target distribution provides a nonresonant optical cavity because the geometry of the path over which feedback occurs, such as the round-trip length and direction, can change in time, or the shape of the spatially-extended target distribution may not provide a smooth enough reflectance. However, it may be possible that the feedback from the spatially-extended target distribution provides a resonant and coherent optical cavity if the geometric and physical constraints noted above are overcome. In any case, the feedback can be generated using spontaneously emitted light that is produced from a non-oscillator gain medium.
US08680488B2
A system and method for using electron beams with engineered phase dislocations as scanned probes in electron probe beam instruments such as scanning transmission electron microscopes. These types of electron beams have unique properties and can provide better information about a specimen than conventional electron beams. Phase dislocations may be created based on a pattern disposed on a nanoscale hologram, which may be placed in the electron optical column of the electron probe beam instrument. When an electron beam from the instrument is directed onto the hologram, phase dislocations may be imprinted onto the electron beam when electrons are diffracted from these holograms. For example, electron probe beams with spiral phase dislocations may occur. These spiral phase dislocations are formed using a hologram with a fork-patterned grating. Spiral phase dislocations may be used to provide magnetic contrast images of a specimen.
US08680487B2
A simulation device includes an input unit which receives an input of simulation data including material information of the irradiation target and irradiation information of a charged particle beam, and an arithmetic unit which calculates the dose distribution of the charged particle beam in the irradiation target on the basis of simulation data received by the input unit and the dose distribution kernel. The arithmetic unit segments the charged particle beam spread to a predetermined range at an intermediate portion in the traveling direction of the charged particle beam, hypothesizes a plurality of virtual shapes having conical spread with a segmented position as a start point, and calculates the dose distribution of the charged particle beam in the irradiation target on the basis of simulation data received by the input unit and a plurality of virtual shapes of the charged particle beam.
US08680485B2
There is provided a method of avoiding deterioration of the accuracy in the number of detected light-emitting particles due to that two or more light-emitting particles are encompassed at a time in the light detection region in the scanning molecule counting method using an optical measurement with a confocal microscope or a multiphoton microscope. In the inventive optical analysis technique, in the detection of an individual signal indicating light of a light-emitting particle by selectively detecting a signal having an intensity beyond a threshold value as a signal indicating light of a light-emitting particle in light intensity data produced through measuring light intensity during moving the position of a light detection region in a sample solution, the threshold value is set so that a signal indicating light from a light-emitting particle encompassed in a region narrower than the light detection region will be detected selectively.
US08680476B2
A beta radiation monitor (70,90), comprising a gas flow proportional detector (60) for detecting beta radiation emitted by a beta emitter external to the detector; a fill gas supply (51) configured to supply a fill gas to the detector, wherein the fill gas comprises nitrogen; a temperature sensor (72) for measuring temperature; and a controller (64) in communication with the temperature sensor for adjusting an operational parameter of the monitor in accordance with the measured temperature. The operational parameter may comprise a voltage applied across the fill gas, which may be thermistor controlled, or a beta radiation detection threshold of the detector. The fill gas is supplied by a nitrogen generator. The gas flow proportional detector may be a large-area detector.
US08680475B2
Portable digital X-ray detectors are provided. One X-ray detector includes an outer assembly and a detector assembly disposed within the outer assembly. The detector assembly includes an imager having a scintillator that converts radiographic energy to light and a detector array having one or more detector elements that detect the light from the scintillator. The detector assembly also includes electronic circuitry mounted on at least one printed circuit board and adapted to control operation of the imager during data acquisition and readout. Further, an elastomeric assembly is disposed between the imager and the electronic circuitry, and the elastomeric assembly is configured to absorb backscattered X-rays that pass through the imager or deflect off of a portion of the outer assembly during an X-ray exposure.
US08680470B2
The present invention provides a radiographic imaging device, a computer-readable medium storing a program for controlling a radiographic imaging device, and a method for controlling a radiographic imaging device, that may suppress feed-through without narrowing a dynamic range. Namely, a control section outputs control signals via scan lines to gates of TFT switches to perform control in such a way that the timing when a TFT switch n−1 of a pixel n−1 is switched to an OFF state and the timing when a TFT switch n of a pixel n is switched to an ON state become simultaneous timings, or timings that can be regarded substantially simultaneous even though the time period in which the TFT switch n is in an ON state and part of the time period in which the TFT switch n−1 is in an ON state overlap.
US08680469B1
A neutron irradiation history sensor and detection method for detection of thermal neutrons exploit transmutation of 164Dy into 165Ho and 166Er and significant differences in optical properties of Dy, Ho, and Er in order to enable detection of relative fractions of Dy, Ho, and Er and thus the degree and timing of prior thermal neutron exposure that has occurred, providing a tamper-proof forensic record of the prior thermal neutron exposure. The irradiation history sensor and detection method advantageously employ Dy-containing nanocrytals (NCs) residing in a transparent host.
US08680464B2
A mass spectrometer having a resolution improved by introducing ions into a mass spectrometry part with a high efficiency is provided with a small-sized, simple configuration. The mass spectrometer includes an opening/closing mechanism provided between a sample introducing piping part for introducing a sample into the mass spectrometry part and the mass spectrometry part to conduct gas introduction intermittently and control sample passage. The mass spectrometer further includes a pump mechanism to evacuate a high pressure side of the sample introducing piping part, that is, an opposite side of the opening/closing mechanism to the mass spectrometry part to have a pressure in a range of 100 to 10,000 Pa.
US08680461B2
A sample analysis apparatus (10) includes processing circuitry (22) coupled to a data set device (20) and a storage device (24) to acquire one data set from an analysis component (14) according to one analysis parameter set and to prepare another analysis parameter set using another previously acquired data set.
US08680460B2
A disruptor apparatus comprises a nozzle comprising: a converging section; a diverging section; and a throat between the converging section and the diverging section. The disruptor apparatus also comprises a holder configured to receive a fluid conduit, which comprises an outlet located in the converging section; and a channel disposed about the holder and configured to guide a gas past the outlet of the fluid conduit, through the converging section, through the throat and into the diverging section where the gas travels at supersonic speed and establishes a standing shock wave in the diverging section. A mass spectrometer and a method are also described.
US08680444B2
A soldering apparatus for connecting solar cells includes an induction heat source to connect cell conducting tracks, provided with soldering medium, with electric conductors. The heat source has a high-frequency generator and an inductor loop in which the flow of a high-frequency current causes a high-frequency magnetic field to induce in the conducting track and in the electric conductor arranged along the conducting track eddy currents that generate the heat that is necessary for the soldering operation. The U-shaped inductor loop has narrowings and widenings that serve to optimize the heat development in the soldering zone and thus also save energy. Each widening affords access to the soldering point for a magnetic-field-neutral pressure foot that presses the conductor onto the conducting track. The inductor loop extends the entire length of the conducting track of the cell upper and lower sides to solder to the conductor in one soldering operation.
US08680439B2
Apparatus for and methods of rethermalizing a package of refrigerated or frozen food are disclosed. In general, heating mechanisms are brought into conductive heat transfer contact with the package of food and operated for a duration of rethermalization time to rethermalize the package of food by heating the food to a rethermalized temperature, and then, if desired, to hold the rethermalized package of food at a desired holding temperature for a duration of holding time. The rethermalization time can be relatively short (e.g., thirty minutes or less), and the holding time can range from a very short period of time to a very long period of time (e.g., four, six, eight or more hours) without significant loss of food quality. Other features of the apparatus and methods are disclosed.
US08680430B2
A method of accomplishing high-throughput laser processing of workpiece features arranged in a densely spaced pattern minimizes workpiece feature processing inaccuracy and quality degradation that result from dynamic and thermal loads on laser beam positioning and optical components directing the laser beam during workpiece feature processing. A preferred embodiment is implemented with a laser beam positioning system composed of a zero-inertia optical deflector of an acousto-optic beam deflector (AOD) or an electro-optical deflector (EOD) type, a galvanometer head, and a linear stage cooperating to position the laser beam among the workpiece features.
US08680424B2
A microwave plasma processing device includes a fixing device for fixing a substrate as a processing target on a central axis in a plasma processing chamber, a exhausting device for depressurizing an inside and outside of the substrate, a metal processing gas supply member which is present in the substrate and forms a reentrant cylindrical resonating system along with the plasma processing chamber, and a microwave introducing device for introducing a microwave into the plasma processing chamber to perform processing. A microwave sealing member is provided at a substrate-holding portion of the fixing device, and a connection position of the microwave introducing device is located at a node of an electric field intensity distribution formed on the processing gas supply member by introducing the microwave.
US08680413B2
An illuminating push-button device includes a key-top part having a key-top surface and a first protrusion that protrudes from a back side of the key-top surface. The device also includes a key rubber part made of a transparent or semi-transparent elastic material and having a second protrusion that receives the first protrusion, the second protrusion being oriented in a common direction as the first protrusion. A switching device is included that opposes the second protrusion and is configured to be actuated in response to the key-top part being depressed. A light-source element emits light from a light-emitting surface and cooperates with a light-blocking sheet disposed between the light-source element and key rubber part and covers at least a portion of the light-emitting surface of the light-source element and has a loose hole through which the second protrusion of the key rubber part is passed.
US08680407B1
A modular enclosure assembly comprising: an upper and lower enclosure subassemblies, interconnected by a partial interpenetration, and a pair of hinged panel subassemblies for opening/closing the inner space of the enclosure subassemblies. Each of the enclosure subassemblies incorporates a back base plate having a first interpenetrating zone, located at an end of a lower left side of the back base plate, and a second interpenetrating zone, located at an end of a lower right side of the back base plate and juxtaposed with the first interpenetrating zone. The second interpenetrating zone incorporates a slat partially superposed on a rear surface of the back base plate where and with which this second interpenetrating zone forms a monoblock structure and from which the slat extends downwardly, beyond the rear surface of the back base plate.
US08680405B2
The present invention relates to a circuit board. The circuit board includes: a first path is routed on a first layer of the circuit board for transferring a first signal; a second path is routed on a second layer of the circuit board for transferring a second signal; a third path is routed on third layer of the circuit board; a first via is coupled to the first and third paths, and the first via is removed when the second signal is transferred by the second path; a second via is coupled to the second and third paths, and the second via is removed when the first signal is transferred by the first path.
US08680404B2
The present invention provides a printed circuit board including: a circuit pattern formed on a first insulating layer; a via pad disposed on the first insulating layer by being spaced apart from the circuit pattern, formed on a lower surface, where a via hole is formed, to have a cross section larger than that of the via hole, and having concavo-convex patterns; a second insulating layer formed on the via pad where the via hole is not formed and on the circuit pattern; and a copper foil layer formed on the second insulating layer and the via hole, and a method of manufacturing the same.
US08680402B2
A multi-layer Flexible Printed Circuit Board (FPCB) for an electronic device, in which a plurality of components are provided alternately on a top surface and a bottom surface of a base layer and the components are removed from the other region. The multi-layer FPCB includes a base layer, a first circuit pattern provided on a side region on a top surface of the base layer, a first adhesive layer provided in the first circuit pattern, a second circuit pattern provided on a bottom surface of the base layer and in an other-side region opposite to the side region, a second adhesive layer provided in the second circuit pattern, a first insulating/protecting layer provided on a top surface of the first adhesive layer, and a second insulating/protecting layer provided on a bottom surface of the second adhesive layer.
US08680398B2
A composition for a flame-retardant silane-crosslinked olefin resin, an insulated wire including the same, and a method for producing a flame-retardant silane-crosslinked olefin resin. The composition contains silane-grafted polyethylene made by graft polymerization of very low-density polyethylene having a density of 0.880 to 0.895 g/cm3 with a silane coupling agent, a polypropylene elastomer, metal hydroxide, and a silane crosslinking catalyst. The method includes the steps of kneading a batch containing silane-grafted polyethylene, a batch containing a polypropylene elastomer and metal hydroxide, and a batch containing an olefin resin and a silane crosslinking catalyst, molding a composition of the kneaded batches, and subjecting the molded composition to water crosslinking.
US08680395B2
A high speed video cable carries signals according to the High-Definition Multimedia Interface (HDMI), and includes a raw cable and may include a boost device. The raw cable includes coaxial lines which are covered by an outer metallic braid. Each of four high speed video signals is carried on the inner conductors of a pair of coaxial lines. Lower speed signals are carried on the galvanically or capacitively coupled shields of a pair of coaxial lines, as well as the braid of the cable.
US08680394B2
A cover plate assembly and an electrical box are provided for mounting one or more electrical wiring devices. The cover plate assembly can be modified to provide a single gang, double gang or triple gang assembly for mounting the wiring devices. The cover plate assembly includes a collar forming a mud ring having at least one removable portion which can be removed to form an open side of the collar. An adapter is attached to the cover plate assembly at the open side of the collar to enlarge the dimensions of the collar to receiving a plurality of electrical wiring devices.
US08680391B2
A solar concentrator comprises a pair of concentric reflectors having a spindle toroid geometry for focusing the collected solar radiation into a ring-shaped focal area, as opposed to the “point” or “line” focus of prior art configurations. In a preferred embodiment, each reflector is formed of a plurality of curved petals that are disposed in a contiguous, keystone arrangement that requires no additional fixturing to hold the petals in place. Such an arrangement reduces the weight, complexity and cost of the final solar concentrator structure.
US08680374B1
A novel soybean variety, designated XBP44003 is provided. Also provided are the seeds of soybean variety XBP44003, cells from soybean variety XBP44003, plants of soybean XBP44003, and plant parts of soybean variety XBP44003. Methods provided include producing a soybean plant by crossing soybean variety XBP44003 with another soybean plant, methods for introgressing a transgenic trait, a mutant trait, and/or a native trait into soybean variety XBP44003, methods for producing other soybean varieties or plant parts derived from soybean variety XBP44003, and methods of characterizing soybean variety XBP44003. Soybean seed, cells, plants, germplasm, breeding lines, varieties, and plant parts produced by these methods and/or derived from soybean variety XBP44003 are further provided.
US08680365B2
The present invention relates to novel brassica plants, in particular to novel cauliflower plants. In one embodiment, the novel cauliflower plants provided herein comprise a long stem and are suitable for mechanical harvesting. The application also further discloses seeds the cauliflower plants of the present invention and parts thereof, for example pollen, ovules and curds. The application also further discloses methods of using a plant of instant invention, such as methods of producing a cauliflower curd of the instant invention, and methods of harvesting the curds of plants of the instant invention.
US08680359B2
A reduced pressure tissue treatment system includes an applicator having an aperture, a first pad section, and a second pad section substantially covering the aperture and positioned substantially adjacent the first pad section. A fabric layer is located at least partially between the second pad section and the drape, and the fabric layer includes a woven or non-woven fabric made from a fiber material. A drape substantially covers the first pad section, the second pad section, the fabric layer, and the applicator. A reduced pressure source is in fluid communication with at least one of the first pad section and the fabric layer for providing reduced pressure to the aperture.
US08680358B1
A method for cross connecting the lean solvent supply lines between the liquid liquid extraction (LLE) and the extractive distillation (ED) processes thereby using the LLE column as the outlet for removing accumulated heavy hydrocarbons (HCs) and polymeric materials from the solvent loop of both processes to maintain their solvent performance. The unique capabilities of the LLE column in rejecting heavy HCs from the solvent into a raffinate product stream that leaves the system enable the removal of the accumulated heavy HCs and polymeric materials from the closed solvent loop of the ED process when their lean solvent loop are cross connected. Cross connection requires minimum equipment change. In the revamped system, the solvent recovery column (SRC) in LLE process supplies lean solvent for the extractive distillation column while the SRC of the ED process supplies lean solvent for LLE column.
US08680331B2
The objective of the present invention is to provide a process for production of (meth)acrylic acid with improved production efficiency by efficiently shifting from heating procedure to cooling procedure for a crystallizer. A process for production of (meth)acrylic acid according to the present invention is characterized in comprising the steps of crystallizing (meth)acrylic acid from a crude (meth)acrylic acid solution by using a batch type crystallizer, and melting the obtained (meth)acrylic acid crystal to obtain a (meth)acrylic acid melted liquid; wherein preliminary cooling of the crystallizer for the next crystallization step is started during transferring the (meth)acrylic acid melted liquid from the crystallizer.
US08680328B2
A process for producing an optically active cyclopropanecarboxylic acid ester compound represented by the formula (4): (wherein R5, R6 and * each represents the same meaning as defined below), comprising reacting a diazoacetic acid ester represented by the formula (2): N2CHCO2R5 (2) (wherein R5 represents an alkyl group having 1 to 15 carbon atoms or the like) with a compound represented by the formula (3): (wherein R6 represents an alkyl group having 1 to 15 carbon atoms or the like), in the presence of an asymmetric copper complex obtained by reacting a copper compound and an optically active salicylideneaminoalcohol compound represented by the formula (1): (wherein R1 represents an alkyl group having 1 to 4 carbon atoms or the like, R2 represents a hydrogen atom or the like, R3 and R4 independently represent a hydrogen atom or the like, and * represents an asymmetric center).
US08680310B2
New (E)-styryl-alkynylsubstituted silicon compounds having the generalized formula 1 and A new method of obtaining (E)-styryl-alkynylsubstituted silicon compounds having the generalized formula 1. A denotes: phenylmethylsilyl, 1,4-bis(dimethylsilyl)benzene, 1,2-bis(dimethylsilyl)ethane, 1,1,3,3-tetramethyldisilazane, 1,1,3,3-tetramethyldisiloxane, R′ denotes: tri(isopropyl)silyl, 1-pentyl, 2-(trimethylsiloxy)-2-butyl, 1-(trimethylsiloxy)-1-cyclohexyl, triethylgermyl, R′ denotes: H or Cl and when A denotes phenylmethylsilyl then R″ denotes also methyl or a methoxy group. A method of obtaining (E)-styrylalkynylsubstituted silicon compounds having the generalized formula 1 where A, R′ and R″ denote the same as stated above by way of a silylative coupling reaction between a suitable substituted styrene and a suitable vinyl-alkynylsubstituted silicon compound in the presence of a ruthenium(II) complex as catalyst.
US08680307B2
Novel group 6 organometallic compounds, supported on anions by means of at least one covalent metal-oxygen bond, are obtained by reaction of at least one borate or aluminate comprising at least one hydroxy group with at least one compound of a group 6 transition metal. These compounds are used in a catalytic composition utilized in an olefin metathesis method.
US08680302B2
Disclosed is a practical method for efficiently producing an alcohol compound by hydrogenating an aldehyde by using a homogeneous copper catalyst which is an easily-available low-cost metal species. Specifically disclosed is a method for producing an alcohol compound, which is characterized in that a hydrogenation reaction of an aldehyde compound is performed in the presence of a homogeneous copper catalyst and a diphosphine compound.
US08680294B2
Processes useful for the preparation of a Compound of Formula I: Formula (I). Intermediates useful for the preparation of the compound of Formula I, and processes useful for preparing said intermediates are disclosed.
US08680292B1
The invention demonstrates the synthesis of a new pyrazole-containing monomer by means of an easily implemented two-step process. This monomer can be electropolymerized to yield a stable n-doping polymer that may easily be electrochemically characterized. It is demonstrated that the electrochemical behavior of the polymer films produced is dependent upon the conditions applied during electrodeposition. Films deposited by cycling only at relatively positive potentials (0 to 2000 mV) show less intense n-doping responses than those films obtained by scanning the applied potential throughout a wider range (−2000 mV to 2000 mV).
US08680289B2
Metal imidazolate complexes are described where imidazoles ligands functionalized with bulky groups and their anionic counterpart, i.e., imidazolates are described. Compounds comprising one or more such polyalkylated imidazolate anions coordinated to a metal or more than one metal, selected from the group consisting of alkali metals, transition metals, lanthanide metals, actinide metals, main group metals, including the chalcogenides, are contemplated. Alternatively, multiple different imidazole anions, in addition to other different anions, can be coordinated to metals to make new complexes. The synthesis of novel compounds and their use to form thin metal containing films is also contemplated.
US08680283B2
The present invention relates to a process for the preparation of 5-substituted 1-alkyltetrazolyl oxime derivatives.
US08680279B2
Provided are compounds, pharmaceutical compositions and methods of treatment or prophylaxis of certain neurologic disorders, including disorders related to NMDA receptor activation, neuropsychiatric disorders, neurodegenerative disorders and other neurologic diseases, disorders and related conditions. The compounds are of the Formulas I and Ia-Ij as described herein.
US08680275B2
Disubstituted 3,8-diaza-bicyclo[4.2.0]octane and 3,6-diazabicyclo[3.2.0]heptane compounds are described, which are useful as orexin receptor modulators. Such compounds may be useful in pharmaceutical compositions and methods for the treatment of diseased states, disorders, and conditions mediated by orexin activity, such as insomnia.
US08680274B2
Stable, bent allenes, organometallic complexes of bent allenes are provided along with methods of conducting chemical processes such as olefin metathesis, comprising contacting an olefin substrate with an organometallic complex as described herein, under suitable conditions.
US08680272B2
The present invention provides 3-arylethynyl substituted quinazolinone compounds of formula (A) as potential anticancer agents against sixty human cancer cell lines. R1═H, OH, OCH3; R2═H, OH, CH3, OCH3, NO2; R3═H, OH, OCH3, F, Cl; R2+R3=—OCH2O—; R4═H, OH, CH3, OCH3; R5═H, OH, CH3, OCH3; R6═H, OCH3.
US08680271B2
A process for the preparation of the compound of Formula (I) is described.
US08680270B2
The presently disclosed subject matter is directed to metallo-oxidoreductase inhibitors having metal binding moities linked to a targeting moiety through a linking group or a direct bond, methods for screening for metallo-oxidoreductase inhibitors, and methods of treating an oxidoreductase related disorder by administering a metallo-oxidoreductase inhibitor to a subject in need of treatment thereof.
US08680265B2
Processes are disclosed for the preparation of a compound having the formula: (I) and intermediate compounds wherein M is a single-photon-emission tomography imageable radiometal and/or a paramagnetic metal, R is hydrogen or a halogen provided that at least one R is halogen and Y is selected from ortho, meta or para O(CH2)nC2HB9H10 or O(CH2)nC2HB10H10 wherein n is 0 or an integer from 1 to 20 and O(CH2)nC2HB9H10 is nido ortho-, meta- or para-carborane and O(CH2)nC2HB10H10 is ortho-, meta- or para-carborane.
US08680250B2
The present invention is one that, in a pollen protein extracting method, enables mass production, and while improving production efficiency, achieves a reduction in workload such as a reduction in man-hours, reductions in equipment cost and running cost, and an improvement of a work environment. Specifically, a pollen protein extracting method for extracting water-soluble protein from pollen is characterized by including: mixing the pollen and PBS; adding an aggregating agent including a natural inorganic component to a resultant mixed solution and performing stirring; and after formation of a pollen aggregate, performing filter filtration to perform solid-liquid separation.
US08680242B2
The invention relates to C9orf46 homolog, a novel murine membrane protein, and its orthologs in human, mouse and all other species, termed Plg-RKT, or analogs, thereof and the isolation method. The function of this molecule is to bind to plasminogen, plasminogen fragments such as angiostatin1 and other plasminongen fragments having angiostatic activity, tissue plasminogen activator and Lipoprotein(a). Plasminogen receptors function to modulate cell surface proteolysis and physiological and pathophysiological processes requiring cell migration, including, but not limited to, cell migration during inflammation, tissue remodeling, wound healing, tumor cell invasion and metastasis, skeletal myogenesis, neurite outgrowth. Plasminogen receptors also modulate apoptosis and cell death. The invention also relates to antibodies that inhibit plasminogen, plasminogen fragments such as angiostatin1 and other plasminongen fragments having angiostatic activity, tissue plasminogen activator or Lipoprotein(a) binding to Plg-RKT and/or immunoreact with Plg-RKT.
US08680239B2
The present invention relates to the use of a modulator of a polypeptide having or comprising an amino acid sequence as disclosed herein or of a functional fragment or derivative thereof or of a polynucleotide encoding said polypeptide or fragment or derivative for the preparation of a pharmaceutical composition for preventing, alleviating or treating diseases or conditions associated with the degeneration or injury of vertebrate nervous tissue, associated with seizures or associated with angiogenic disorders or disorders of the cardio-vascular system.
US08680231B2
The present invention relates to an alternating or statistical conjugated copolymer comprising: at least one benzotriazole unit B having general formula (Ia) or (Ib): wherein the group R is selected from alkyl, aryl, acyl or thioacyl groups, possibly substituted; at least one conjugated structural unit A, wherein each unit B is connected with at least one unit A in any of the positions 4, 5, 6 or 7, preferably in positions 4 or 7.
US08680228B2
Methods for making P4HB polymers and copolymers thereof that are useful for preparing controlled release systems, medical devices and as intermediates in chemical synthesis, have been developed. These methods avoid the use of organic solvents, and basic conditions that can cause transesterification reactions with polymer terminal end groups or elimination reactions. A preferred embodiment is a method for producing polymers of P4HB with weight average molecular weight less than 250,000, and more preferably, less than 100,000, and a Pd of less than 3, which are useful in controlled release. A particularly preferred embodiment utilizes aqueous acetic acid to hydrolyze pellets of P4HB polymers and copolymers while in suspension.
US08680225B1
The present invention is directed toward a series of polyglycerol polyesters that have silicone terminal groups with tunable ascetics and performance in cosmetic formulation. These novel silicone containing polyglycerol polyesters are designed to be multidimensional. Multidimensional is meant that the polymer contains a variety of groups containing different chemical and physical properties covalently bonded together. The physical properties of the current invention can be tuned rapidly by controlling the ratio of fatty groups, as well as the cross-linker used. Tuned here is meant the ability to adjust the physical properties to a desired value. The resulting polyglycerol polyesters have outstanding aesthetics and physical properties.
US08680220B2
The present invention relates to a ligand and its use in a catalyst for the oligomerization of olefinic monomers, the ligand having the general formula (VI): (R9)(R10)P—N(R3)—P(R4) (VI) wherein: the R9 and R10 groups are independently selected from optionally substituted alkyl or heteroalkyl groups; the R3 group is selected from hydrogen, a hydrocarbyl group, a substituted hydrocarbyl group, a heterohydrocarbyl group, a substituted heterohydrocarbyl group, a silyl group or derivative thereof; the R4 group is an optionally substituted alkylenedioxy or alkylenedimercapto structure which is bound to the phosphorus atom through the two oxygen or sulphur atoms of the alkylenedioxy or alkylenedimercapto structure or an optionally substituted arylenedioxy or arylenedimercapto structure which is bound to the phosphorus atom through the two oxygen or sulphur atoms of the arylenedioxy or arylenedimercapto structure.
US08680211B2
A process for preparing a hybrid polyester-polyether polyol comprises contacting a carboxyl group-containing component and an epoxide, optionally in the presence of one or more of a double metal cyanide catalyst, a superacid catalyst, a metal salt of a superacid catalyst and/or a tertiary amine catalyst, under conditions such that a hybrid polyester-polyether polyol is formed. The hybrid polyester-polyether polyol offers the advantages of both ester and ether functionalities when used in a polyurethane formulation, thus enhancing physical properties. The process results in products having narrow polydispersity, a low acid number and unsaturation, and reduced byproduct formation, particularly when the double metal cyanide catalyst is employed.
US08680205B2
A method for improving flow of a two-component urethane system by adding a hydroxy-functional acrylic polymer.
US08680196B2
A halogen-free and phosphorus-free resin formulation, prepared by the following method, is provided. The method includes mixing a carboxy anhydride derivative, diisocyanate, a styrene maleic anhydride (SMA) copolymer derivative and a solvent to form a mixture, and heating the mixture to form a resin formulation. The disclosure also provides a halogen-free and phosphorus-free composite material with a low dielectric constant and flame resistance prepared from the resin formulation.
US08680195B2
The present invention relates to an elastomeric thermoplastic composition characterized in that it has compression resistance at temperatures between 20° C. and 100° C., comprising hydrogenated styrene-butadiene block copolymers, and to the copolymers that form said composition. Furthermore, the present invention relates to a product that has been obtained by means of the molding or extrusion of the composition described above.
US08680187B2
Embodiments of the present invention are directed to modified rosin mildly activated (RMA) fluxes and methods of soldering components on printed circuit boards. The modified RMA flux includes a RMA flux material and a randomizing additive. The randomizing additive causes misalignment of the hydrogen bonds between terpine polymer chains created from the RMA flux material during soldering. The resulting modified RMA flux performs as well as, or better than traditional RMA fluxes, but the flux residue remaining after soldering can be removed with a highly polar solvent, such as soapy water.
US08680167B2
The invention relates to a composition comprising (a) from 5 to 99 wt % of a modified polybutylene terephthalate random copolymer that (1) is derived from polyethylene terephthalate component selected from the group consisting of polyethylene terephthalate and polyethylene terephthalate copolymers and (2) has at least one residue derived from the polyethylene terephthalate component, and (b) at least 1 wt % of a filler component. In one embodiment, the invention relates to an article molded from the above-mentioned molding composition. In another embodiment, the invention relates to methods for making and methods for using the molding composition.
US08680157B2
The invention relates to the use of at least one amine oxidase inhibitor for modulating the activity of the lysine-specific demethylase (LSD1) in a mammal and to pharmaceutical compositions for controlling the androgen receptor-dependent gene expression, comprising an effective dose of at least one amine oxidase inhibitor suitable for modulating the activity of the lysine-specific demethylase (LSD1) in a mammal. The invention also relates to assay systems allowing to test LSD1 inhibitors for their ability to inhibit LSD1 function.
US08680153B2
The present invention relates to methods for the treatment of a disease or condition associated with lipid imbalance, comprising (a) decreasing arachidonic acid (AA) levels, (b) increasing docosahexaenoic acid (DHA) levels, (c) increasing DHA/AA ratio or (d) any combination of (a)-(c) in a subject using fenretinide. The invention also relates to diagnostic and screening methods based on the determination of lipid levels.
US08680147B2
The present invention relates to novel composition for the treatment, co-treatment or prevention of inflammatory disorders comprising an effective amount of carnosic acid 12-methylether.
US08680146B2
The present invention relates to salts, polymorphs and hydrates of 2-Amino-2-[2-(4-C2-20-alkyl-phenyl)ethyl]propane-1,3-diol, and to the use thereof, in particular in the treatment or prevention of various autoimmune conditions.
US08680144B2
The present disclosure relates to, inter alia, methods of treating mixed dyslipidemia with ethyl eicosapentaenoate.
US08680142B2
The combination of compounds of the hydroxytolan family with ascorbate plus naphthoquinone (Vitamin K3; VK3), or a quinone or semiquinone analogue of VK3, kill tumor cells, inhibit tumor growth and development, and treat cancer in subjects in need thereof.
US08680131B2
The present invention provides novel, diastereomeric pyrazolines that are useful as cannabinoid receptor blockers and pharmaceutical compositions thereof and methods of using the same for treating obesity, diabetes, inflammatory disorders, cardiometabolic disorders, hepatic disorders, and/or cancers.
US08680121B2
This document discloses molecules having the following formula (Formula One) and processes related thereto.
US08680116B2
The present invention is directed to quinolinone compounds which are useful as therapeutic agents for the treatment of central nervous system disorders associated with phosphodiesterase 2 (PDE2). The present invention also relates to the use of such compounds for treating neurological and psychiatric disorders, such as schizophrenia, psychosis or Huntington's disease, and those associated with striatal hypofunction or basal ganglia dysfunction.
US08680102B2
The subject of the invention is compounds of formula (I): in which R1-R10 are as defined within, the method of preparation and therapeutic application as cannabinoid CB1 receptor antagonists.
US08680099B2
Provided herein are PAK inhibitors and methods of utilizing PAK inhibitors for the treatment of CNS disorders.
US08680088B2
A gonadotropin is administered within a surprisingly effective narrow range for the purpose of treating chronic pain or other central sensitization sequelae. In one aspect, a recipient is provided with at least one of human chorionic gonadotropin (uHCG and/or rHCG), a pharmaceutically active HCG analogue, and a pharmaceutically active metabolite of the HCG or analogue at a dosage selected to provide, or be equivalent to, a human subcutaneous dosage of between 120 IU/day and 170 IU/day of HCG, and more preferably between 140 IU/day and 160 IU/day of HCG. A kit is also described, which includes a supply of the HCG-related drug, a delivery device, and a label that identifies chronic pain or central sensitization as an indication of the drug.
US08680087B2
Macrocyclic amide WH-21091 with antibacterial and antitumor activities, its analogs, preparation methods and uses thereof. The said macrocyclic amides are prepared by microbes of Xenorhabdus and Photorhabdus, or they can be prepared by other living beings through transgenic techniques. The compositions of the said macrocyclic amide and its analogs can be used as drugs and/or agricultural chemicals for treatment of microbial infections, especially for treatment of infectious diseases of Staphylococcus aureus with drug resistance. The said compositions can also be used as drugs for treatment of cancers of human beings or animals.
US08680081B2
The present invention provides methods and compositions for the prophylactic or targeted prophylactic treatment of migraine. In one embodiment a patient is regularly given a therapeutically effective amount of a combination of a cyclooxygenase-2 inhibitor and acetylsalicylic acid or active derivative, for prophylactic treatment of migraine. In another embodiment, a patient, at a time prior to a determined time window, is administered a therapeutically effective amount of a cyclooxygenase-2 inhibitor, either alone or in combination with acetylsalicylic acid or active derivative, to prevent or reduce migraine symptoms during the time window. Representative compositions include a cyclooxygenase-2 inhibitor and acetylsalicylic acid or salicylate salt.
US08680075B2
A method for inhibiting cellular proliferation of fibroblasts and/or glioma cells in a mammal includes administering a composition to a mammal wherein the composition includes an amount of an anionic polymer and an anti-platelet agent effective to inhibit cellular proliferation of fibroblasts and gliomas in the mammal.
US08680072B2
The invention provides a method for combating biofilm, said method comprising contacting a biofilm with an alginate oligomer. The biofilm may be on an animate or inanimate surface and both medical and non-medical uses and methods are provided. In one aspect the invention provides an alginate oligomer for use in the treatment or prevention of a biofilm infection in a subject. In another aspect the method can be used to combat biofilms, on abiotic surfaces, e.g., for disinfection and cleaning purposes.
US08680065B2
Described herein are oligonucleotides that target the human endogenous retrovirus-9 (ERV-9) long terminal repeat (LTR). The ERV-9 LTR oligonucleotides specifically hybridize with either the coding strand or non-coding strand of ERV-9 LTR. It is disclosed herein that ERV-9 LTR oligonucleotides inhibit the proliferation of cancer cells, including breast cancer, liver cancer, prostate cancer, fibrosarcoma and myeloid cancer cells. Also described herein are methods of treating a subject diagnosed with cancer comprising administering to the subject an ERV-9 LTR oligonucleotide. In some examples, the methods further comprise administering a second therapeutic agent, such as an antisense compound or a chemotherapeutic agent.
US08680060B2
Biosurfactants produced by microbes are used to control pests. The biosurfactants can be produced by cultivating a biosurfactant-producing microbe, producing a fermentation broth, and obtaining the biosurfactant from the fermentation broth. Alternately, the biosurfactants can be produced in situ in the environment of the pests by applying a carbon substrate to the pests' environment, which permits naturally-occurring biosurfactant-producing microbes to grow and to generate the biosurfactants. The biosurfactants have pesticidal qualities, and can be used to control a variety of pests, while being biodegradable and otherwise avoiding adverse environmental effects that have often been associated with conventional synthetic pesticides.
US08680055B2
The present invention discloses compositions and methods for treating diseases such as cancer by targeting luteinizing hormone (LH) or its receptor (LHR) involved in androgen synthesis or testosterone production.
US08680052B1
Methods of treating, reducing the incidence of, and/or preventing an ischemic event in a patient undergoing percutaneous coronary intervention (PCI), comprising administering to the patient a pharmaceutical composition comprising cangrelor. The method may further comprise administering an additional therapeutic agent to the patient, the additional therapeutic agent comprising a P2Y12 inhibitor. Pharmaceutical compositions useful for treating, reducing the incidence of, and/or preventing an ischemic event in a patient undergoing PCI. The pharmaceutical compositions comprise cangrelor. Methods of preparing a pharmaceutical composition for treating, reducing the incidence of, and/or preventing an ischemic event in a patient undergoing PCI, comprising admixing cangrelor with one or more pharmaceutically acceptable excipients. An ischemic event may include stent thrombosis, myocardial infarction, ischemia-driven revascularization, and mortality.
US08680050B2
The present invention relates to compositions comprising growth hormone linked to extended recombinant polypeptide (XTEN), isolated nucleic acids encoding the compositions and vectors and host cells containing the same, and methods of making and using such compositions in administration to animals.
US08680043B2
The present invention refers to compounds of formula (I) as useful melanoma vaccines' active ingredients. As a matter of fact, compounds of formula (1) are immunogenic artificial antigens, mimetics of GM3 and GM3 lactone, well known tumor associated antigens (TAAs). In addition, the present invention refers to specific antibodies for compounds of formula (I) which are able to bind to the TAAs. The hereinabove reported compounds and antibodies are therefore potentially useful respectively for the active and passive immunization against tumors over-expressing GM3 ganglioside, in a preferred embodiment melanoma and colon cancer, and for their diagnosis and prognosis.
US08680040B2
Silicic acid esters to which fragrances are bound, preferably as 1-aza-3,7-dioxabicyclo[3,3,0]octane compounds or as monocyclic oxazolidines and that are suitable for adding fragrance to detergents and cleaning agents because they release the bound fragrances in hydrolysis.
US08680039B2
The present invention relates to a method of preparing a fabric softener and to a fabric softener prepared thereby, and more particularly, to a method of preparing a fabric softener containing an esterquat by performing a two-step transesterification reaction on oil and tertiary hydroxyalkyl amine at a low temperature in a high vacuum state under specific conditions, and then quaternizing the resultant product. The method of preparing a fabric softener containing an esterquat according to the present invention can reduce the content of unconverted glyceride, glyceryl ester, or a mixture thereof, and can provide a fabric softener with excellent long-term stability.
US08680038B2
The present invention provides a new copolymer comprising zwitterionic units and other units, a new composition comprising the copolymer, and the use of the copolymer or the compositions for treating or modifying surfaces.
US08680031B1
Exfoliating compositions, such as soaps, scrubs, and muds, for conditioning skin. The compositions include a carrier and particles that are insoluble in the carrier. The carrier may include one of more of a surfactant and an emollient, among other ingredients. The particles preferably include calcium carbonate, one or more phyllosilicates, and a quartz group tectosilicate, preferably have a calcium carbonate equivalent of less than 90%, and preferably embody a schistose texture. The exfoliating compositions with such particles have unexpected moisturizing and skin-conditioning properties.
US08680028B2
A method for the treatment of rock formations which may or may not be underground and, more particularly, of oil or gas production wells, water-injection wells intended to flood hydrocarbon (oil or gas) reservoirs or gas mines or gas storage wells includes a step of injecting, into the rock formation or well, a microgel obtained by dilution in water of a self-invertible inverse latex or of a self-invertible inverse microlatex of a crosslinked polyelectrolyte, obtained by copolymerization, in the presence of a crosslinking agent of partially- or totally-salified free 2-methyl-2-[(1-oxo-2-propenyl)amino]-1-propanesulfonic acid, with at least one cationic monomer chosen from: 2,N,N,N-tetramethyl-2-[(1-oxo-2-propenyl)amino]propanammonium chloride; N,N,N-trimethyl-3-[(1-oxo-2-propenyl)amino]propanammonium chloride; diallyldimethylammonium chloride; N,N,N-trimethyl-2-[(1-oxo-2-propenyl)]ethanammonium chloride; N,N,N-trimethyl-2-[(1-oxo-2-methyl-2-propenyl)]ethanammonium chloride; or N,N,N-trimethyl-3-[(1-oxo-2-methyl-2-propenyl)amino]propanammonium chloride; and with at least one neutral monomer chosen from: acrylamide; N,N-dimethylacrylamide; N-[2-hydroxy-1,1-bis(hydroxymethyl)-ethyl]propenamide; or 2-hydroxyethyl acrylate.
US08680018B2
The present invention concerns a method for the selection of a virus comprising the steps of: (a) providing a virus encoding and displaying a fusion polypeptide, said fusion polypeptide comprising a heterologous polypeptide inserted into the sequence of a viral coat protein polypeptide, wherein said virus comprises a cleavable site located within a displayed polypeptide; (b) exposing the virus to a cleaving agent; (c) propagating the virus comprising intact fusion protein.
US08680014B2
Disclosed herein are methods for improving fruit production or fruit quality in fruit trees, such as decreasing cold damage, increasing fruit size, increasing fruit quality, and/or increasing fruit set. In some embodiments, the disclosed methods include methods of decreasing cold damage to a fruit tree including applying an effective amount of a composition including DL-β-aminobutyric acid to the fruit tree, thereby decreasing cold damage, for example as compared to a control. In other embodiments, the disclosed methods include methods of increasing fruit size or fruit quality of fruit from a fruit tree, including applying an effective amount of a composition including prohexadione-calcium to the fruit tree after anthesis, thereby increasing fruit size or fruit quality, for example as compared to a control. In further embodiments, the disclosed methods include methods of increasing fruit size of fruit from a fruit tree or increasing fruit set of a fruit tree including applying an effective amount of a composition including 4-chlorophenoxyacetic acid to the fruit tree, thereby increasing fruit size or fruit set, for example as compared to a control.
US08680012B2
Pyrandione, thiopyrandione and cyclohexanetrione compounds, which are suitable for use as herbicides.
US08680001B2
The present invention relates to a process for preparing a catalyst solid for olefin polymerization, comprising a finely divided support, an aluminoxane and a metallocene compound, which comprises: a) firstly combining the finely divided support with the aluminoxane and subsequently b) adding the reaction product of a metallocene compound with at least one organometallic compound to the modified support, catalyst solids obtainable by this process, catalyst systems comprising these catalyst solids, their use for the polymerization of olefins and a process for the polymerization of olefins.
US08679995B1
The present application is directed to a zirconia toughened alumina body and process for making the body. The process involves combining tetragonally stabilized ZrO2 nanoparticles, Mg(OH)2 particles and alumina powder into a mixture. All particles of the mixture are milled, formed into a green compact and then sintered. The final composition of the body includes α-Al2O3 toughened with 0.5 to 2.5 weight percent ZrO2 in a stabilized tetragonal form and 0.03 to 0.10 weight percent MgO. The composition results in an Al2O3 body with a density less than 4.0 g/cc and strength greater than 50 kpsi.
US08679987B2
Embodiments described herein relate to a method for processing a substrate. In one embodiment, the method includes introducing a gas mixture comprising a hydrocarbon source and a diluent gas into a deposition chamber located within a processing system, generating a plasma from the gas mixture in the deposition chamber at a temperature between about 200° C. and about 700° C. to form a low-hydrogen content amorphous carbon layer on the substrate, transferring the substrate into a curing chamber located within the processing system without breaking vacuum, and exposing the substrate to UV radiation within the curing chamber at a curing temperature above about 200° C.
US08679984B2
An example embodiment relates to a method of manufacturing an array of electric devices that includes attaching a platform including a micro-channel structure to a substrate. The method includes injecting first and second solutions into the micro-channel structure to form at least three liquid film columns, where the first and second solutions include different solvent composition ratios and the liquid columns each, respectfully, include different solvent composition ratios. The method further includes detaching the platform the substrate, removing solvent from the liquid film columns to form thin film columns, and treating the thin film columns under different conditions along a length direction of the thin film columns. The solvent is removed from the thin film columns and the thin film columns are treated under different conditions along a length direction of the thin film columns.
US08679980B2
(A) solid polymer particles being finely dispersed in the aqueous phase and containing pendant functional groups (a1) capable of strongly interacting and forming strong complexes with the metal of the surfaces to be polished, and pendant functional groups (a2) capable of interacting less strongly with the metal of the surfaces to be polished than the functional groups (a1); and (B) an organic non-polymeric compound dissolved in the aqueous phase and capable of interacting and forming strong, water-soluble complexes with the metal of the surfaces to be polished and causing an increase of the material removal rate MRR and the static etch rate SER of the metal surfaces to be polished with increasing concentration of the compound (B); a CMP process comprising selecting (A) and (B) and the use of the CMP agent and process for polishing wafers with ICs.
US08679979B2
A method of controlling the polishing of a substrate includes polishing a substrate on a first platen using a first set of parameters, obtaining first and second sequences of measured spectra from first and second regions of the substrate with an in-situ optical monitoring system, generating first and second sequences of values from the first and second sequences of measured spectra, fitting first and second linear functions to the first and second sequences of values, determining a difference between the first linear function and the second linear function, adjusting at least one parameter of a second set of parameters based on the difference, and polishing the substrate on a second platen using the adjusted parameter.
US08679964B2
In using Ni(P) and Sn-rich solders in Pb free interconnections, the prevention and control of the formation of intermetallic compound inclusions, can be achieved through a reaction preventive or control layer that is positioned on top of an electroless Ni(P) metallization, such as by application of a thin layer of Sn on the Ni(P) or through the application of a thin layer of Cu on the Ni(P).
US08679963B2
A chip scale package has a semiconductor die having an array of die bond pads arranged with a bond pad density per unit area, embedded in a molded die support body having a surface supporting an array of conducting contacts, each of the contacts connected by an electrical lead to a corresponding one of the die bond pads.
US08679959B2
The present invention relates generally to methods for high throughput and controllable creation of high performance semiconductor substrates for use in devices such as high sensitivity photodetectors, imaging arrays, high efficiency solar cells and the like, to semiconductor substrates prepared according to the methods, and to an apparatus for performing the methods of the invention.
US08679955B2
A method for forming an epitaxial wafer is provided as one enabling growth of a gallium nitride based semiconductor with good crystal quality on a gallium oxide region. In step S107, an AlN buffer layer 13 is grown. In step S108, at a time t5, a source gas G1 containing hydrogen, trimethylaluminum, and ammonia, in addition to nitrogen, is supplied into a growth reactor 10 to grow the AlN buffer layer 13 on a primary surface 11a. The AlN buffer layer 13 is so called a low-temperature buffer layer. After a start of film formation of the buffer layer 13, in step S109 supply of hydrogen (H2) is started at a time t6. At the time t6, H2, N2, TMA, and NH3 are supplied into the growth reactor 10. A supply amount of hydrogen is increased between times t6 and t7, and at the time t7 the increase of hydrogen is terminated to supply a constant amount of hydrogen. At the time t7, H2, TMA, and NH3 are supplied into the growth reactor 10.
US08679954B2
A schottky diode includes a SiC substrate which has a first surface and a second surface facing away from the first surface, a semiconductor layer which is formed on the first surface of the SiC substrate, a schottky electrode which is in contact with the semiconductor layer, and an ohmic electrode which is in contact with the second surface of the SiC substrate. The first surface of the SiC substrate is a (000-1) C surface, upon which the semiconductor layer is formed.
US08679952B2
A method is provided in order to manufacture a silicon carbide epitaxial wafer whose surface flatness is very good and has a very low density of carrot defects and triangular defects arising after epitaxial growth. The silicon carbide epitaxial wafer is manufactured by a first step of annealing a silicon carbide bulk substrate that is tilted less than 5 degrees from <0001> face, in a reducing gas atmosphere at a first temperature T1 for a treatment time t, a second step of reducing the temperature of the substrate in the reducing gas atmosphere, and a third step of performing epitaxial growth at a second temperature T2 below the annealing temperature T1 in the first step, while supplying at least a gas including silicon atoms and a gas including carbon atoms.
US08679948B2
An improved method for singulation of electronic substrates into dice uses a laser to first form cuts in the substrate and then chamfers the edges of the cuts by altering the laser parameters. The chamfers increase die break strength by reducing the residual damage and removes debris caused by the initial laser cut without requiring additional process steps, additional equipment or consumable supplies.
US08679942B2
Composite substrates are produced that include a strained III-nitride material seed layer on a support substrate. Methods of producing the composite substrate include developing a desired lattice strain in the III-nitride material to produce a lattice parameter substantially matching a lattice parameter of a device structure to be formed on the composite substrate. The III-nitride material may be formed with a Ga polarity or an N polarity. The desired lattice strain may be developed by forming a buffer layer between the III-nitride material and a growth substrate, implanting a dopant in the III-nitride material to modify its lattice parameter, or forming the III-nitride material with a coefficient of thermal expansion (CTE) on a growth substrate with a different CTE.
US08679925B2
Methods of manufacturing semiconductor devices and transistors are disclosed. In one embodiment, a method of manufacturing a semiconductor device includes providing a workpiece comprising a plurality of fins, and forming a semiconductive material over a top surface of the plurality of fins. An etch stop layer is formed over the semiconductive material, and an insulating material is disposed over the etch stop layer. The insulating material and a portion of the etch stop layer are removed from over the plurality of fins. Forming the semiconductive material or forming the etch stop layer are controlled so that removing the portion of the etch stop layer does not remove the etch stop layer between a widest portion of the semiconductive material over the plurality of fins.
US08679922B2
The method includes a step of forming a mask having an opening, for forming an opening in multiple insulating films, above a semiconductor substrate on which a member becoming a first insulating film, a member becoming a second insulating film being different from the member becoming the first insulating film, a member becoming a third insulating film, and a member becoming a fourth insulating film being different from the member becoming the third insulating film are stacked in this order; a first step of continuously removing the member becoming the fourth insulating film and the member becoming the third insulating film at a portion corresponding to the opening of the mask; and a second step of removing the member becoming the second insulating film, after the first step, at a portion corresponding to the opening of the mask.
US08679918B2
Disclosed is a multiple-gate transistor that includes a channel region and source and drain regions at ends of the channel region. A gate oxide is positioned between a logic gate and the channel region and a first insulator is formed between a floating gate and the channel region. The first insulator is thicker than the gate oxide. The floating gate is electrically insulated from other structures. Also, a second insulator is positioned between a programming gate and the floating gate. Voltage in the logic gate causes the transistor to switch on and off, while stored charge in the floating gate adjusts the threshold voltage of the transistor. The transistor can comprise a fin-type field effect transistor (FinFET), where the channel region comprises the middle portion of a fin structure and the source and drain regions comprise end portions of the fin structure.
US08679916B2
In device isolation trenches, a first device-isolation insulator film is formed to have recesses thereon and a second device-isolation insulator film is formed in the recesses. The uppermost portions at both ends of the first device-isolation insulator film are located higher than the uppermost portions at both ends of the second device-isolation insulator film.
US08679914B2
A method of forming a chalcogenide material on a surface of a substrate comprising exposing a surface of a substrate to ionized gas clusters from a source gas, the ionized gas clusters comprising at least one chalcogen and at least one electropositive element. A method of forming a resistive random access memory device is also disclosed. The method comprises forming a plurality of memory cells wherein each cell of the plurality of memory cells is formed by forming a metal on a first electrode, forming a chalcogenide material on the metal by a gas cluster ion beam process, and forming a second electrode on the chalcogenide material. A method of forming another resistive random access memory device and a random access memory device including the chalcogenide material are also disclosed.
US08679912B2
A method for forming a semiconductor device includes forming a first plurality of nanocrystals over a surface of a substrate having a first region and a second region, wherein the first plurality of nanocrystals is formed in the first region and the second region and has a first density; and, after forming the first plurality of nanocrystals, forming a second plurality of nanocrystals over the surface of the substrate in the second region and not the first region, wherein the first plurality of nanocrystals together with the second plurality of nanocrystals in the second region result in a second density, wherein the second density is greater than the first density.
US08679907B2
A method of manufacturing a thin-film transistor array includes: forming a gate insulating layer on gate electrodes; forming an amorphous silicon layer on the gate insulating layer; generating a crystalline silicon layer by crystallizing the amorphous silicon layer; and forming source electrodes and drain electrodes. The thicknesses of the gate insulating layer on the gate electrode is within a range in which there is a positive correlation between light absorbances of the amorphous silicon layer above the gate electrodes for the laser light and equivalent oxide thicknesses of the gate insulating layer on the gate electrodes. The thicknesses of the amorphous silicon layer above the gate electrodes is within a range in which variation of the light absorbances according to variation of the thicknesses of the amorphous silicon layer is within a predetermined range from a first standard.
US08679903B2
A method is provided for fabricating a vertical insulated gate transistor. A horizontal isolation region is formed in a substrate to separate and electrically isolate upper and lower portions of the substrate. A vertical semiconductor pillar with one or more flanks and a cavity is formed so as to rest on the upper portion, and a dielectrically isolated gate is formed so as to include an internal portion within the cavity and an external portion resting on the flanks and on the upper portion. One or more internal walls of the cavity are coated with an isolating layer and the cavity is filled with a gate material so as to form the internal portion of the gate within the cavity and the external portion of the gate that rests on the flanks, and to form two connecting semiconductor regions extending between source and drain regions of the transistor.
US08679892B2
The present invention relates to a method for manufacturing silicon thin-film solar cells, including: providing a substrate; forming a first electrode on the substrate; forming a first doped semiconductor layer on the first electrode by chemical vapor deposition; forming an intrinsic layer on the first doped semiconductor layer by chemical vapor deposition, where the intrinsic layer includes a plurality of amorphous/nanocrystalline silicon layers, and the intrinsic layer has various energy bandgaps formed by varying average grain sizes of the amorphous/nanocrystalline silicon layers; forming a second doped semiconductor layer on the intrinsic layer by chemical vapor deposition, where one of the first doped semiconductor layer and the second doped semiconductor layer is a p-type amorphous silicon layer and the other is an n-type amorphous/nano-microcrystalline silicon layer; and forming a second electrode on the second doped semiconductor layer. Accordingly, the present invention can achieve broadband absorption in a single junction structure.
US08679881B1
A growth method for reducing defect density of GaN includes steps of: sequentially forming a buffer growth layer, a stress release layer and a first nanometer cover layer on a substrate, wherein the first nanometer cover layer has multiple openings interconnected with the stress release layer; growing a first island in each of the openings; growing a first buffer layer and a second nanometer cover layer on the first island; and growing a second island to form a dislocated island structure. Thus, through the first nanometer cover layer and the second nanometer cover layer, multiple dislocated island structures can be directly formed to reduce manufacturing complexity as well as increase yield rate by decreasing manufacturing environment variation. Further, the epitaxial lateral over growth (ELOG) approach also effectively enhances characteristics of GaN optoelectronic semiconductor elements.
US08679874B2
This invention provides an optoelectronic semiconductor device having a rough surface and the manufacturing method thereof. The optoelectronic semiconductor device comprises a semiconductor stack having a rough surface and an electrode layer overlaying the semiconductor stack. The rough surface comprises a first region having a first topography and a second region having a second topography. The method comprises the steps of forming a semiconductor stack on a substrate, forming an electrode layer on the semiconductor stack, thermal treating the semiconductor stack, and wet etching the surface of the semiconductor stack to form a rough surface.
US08679866B2
A light emitting device comprises: an LED chip having a quantum well structure and a light emitting layer made of a gallium nitride compound semiconductor; a first transparent material covering the LED chip; a second transparent material for protecting the LED chip and the first transparent material; and a phosphor for absorbing a part of the light from the LED chip and emitting a light having a wavelength different from the light from the LED chip; wherein the phosphor is included in second transparent material, and the light from the LED chip and the light from said phosphor are mixed to make a white light.
US08679865B2
A resin application apparatus includes: an optical property measurement unit measuring an optical property of light emitted from a light emitting diode (LED) chip which is mounted on a package body and to which transparent resin is not applied; and a resin application unit applying light conversion material-containing transparent resin to the LED chip in accordance with a resin application amount which is decided depending on the optical property measured by the optical measurement unit.
US08679852B2
A particulate matter generator implemented as a “mini-burner”, and used in conjunction with a larger test system for the specific purpose of enhancing the particulate matter content of exhaust gas. The exhaust stream of the larger system is supplemented with exhaust from the mini-burner to produce exhaust with desired particulate matter characteristics. The exhaust gas may then be used for various test purposes, such as testing emissions control devices.
US08679850B2
The present invention concerns a method of detecting cationic polymers comprising: obtaining a target water sample containing a cationic polymer; adding a polymer dispersant solution and a phosphate solution to the target water sample, the polymer dispersant solution is comprised of a polymer dispersant with calcium and magnesium hardness and the phosphate solution is comprised of a phosphate; standing the target water sample; and measuring the turbidity of the target water sample; comparing the turbidity of said target water sample with a calibration curve of the turbidity of samples containing known concentrations of cationic polymers to determine the concentration of cationic polymers in said target water sample.
US08679848B2
A collection device for use in connection with off-device testing of collected samples. The device includes a first panel having one or more apertures for receiving samples, a second panel opposite the first panel, and a removable tab having a first portion and a second portion. The first portion is aligned with at least one of apertures on the first panel and constructed such that depositing the sample through the at least one aperture causes the sample to be directly deposited on the first portion of the tab, and the second portion includes a sample-free grasping area accessible from an exterior of the device for removing the tab. A method of obtaining a sample is also disclosed.
US08679845B2
The present invention relates generally to mutagenesis of target genes that takes advantage of the natural mutagenic capabilities of B cells, and enhances those capabilities by bringing the process of diversification under control. The invention provides a method for rapidly and inducibly generating point mutations and other types of diversification in expressed genes, such as antibody genes. This method can be coupled with selection to identify B cell clones that produce, for example, antibodies of high affinity or specificity. The diversification process can be modulated, accelerated, halted, switched between methods of mutagenesis and the like. The modulation of diversification in accordance with the invention is both inducible and reversible. The invention provides a means of rapid and feasible development of a repertoire of variant immunoglobulins and other polypeptides.
US08679843B2
A microfluidic cell culture apparatus includes a cell retention chamber and a perfusion channel. The cell retention chamber has a structured surface. The structured surface includes a major surface from which a plurality of projections extends into the chamber. The plurality of projections are arranged to suspend cells cultured in the chamber above the major surface. The first perfusion channel is configured to provide laminar flow of a fluid through the channel and forms a plurality of openings in communication with the cell retention chamber. The openings are configured to prevent cells from the retention chamber from entering the perfusion channel.
US08679840B2
The invention relates to a method for in vitro maturation of at least one immature dendritic cell, comprising stimulating said immature dendritic cell with TNFα, IL- 1β, IFNγ, a TLR7/8 agonist and prostaglandin E2 (PG). Furthermore, the invention relates to a composition comprising these factors as well as to mature dendritic cells produced by a method of the invention.
US08679836B2
This disclosure relates to fluorescent cell lines and to the use of such cell lines in monitoring cellular activity, such as angiogenesis. This disclosure further relates to the use of such cell lines in a three-dimensional cell culture to monitor angiogenic and metastatic potential of tumor cells and selecting personalized therapeutics for treatment of cancer.
US08679831B2
A microfluidic device includes an input port for inputting a particle-containing liquidic samples into the device, a retention member, and a pressure actuator. The retention member is in communication with the input port and is configured to spatially separate particles of the particle-containing liquidic sample from a first portion of the liquid of the particle containing fluidic sample. The pressure actuator recombines at least some of the separated particles with a subset of the first portion of the liquid separated from the particles. The device can also include a lysing chamber that receives the particles and liquid from the retention member. The lysing chamber thermally lyses the particles to release contents thereof.
US08679828B2
The sample container has a two-layer membrane filter comprising a first layer as an upper layer serving as a hydrophilic membrane filter and a hydrophobic membrane filter as an underlying second layer capable of filtering an aqueous solution without the use of a wetting agent and by means of a formed negative pressure. Using this sample container, a large amount of an aqueous sample solution is filtered by means of a negative pressure formed by a suction portion to capture microbes in the aqueous sample solution by the hydrophilic membrane filter. Then, the negative pressure is restored to normal pressure, and a microbial dissolution solution is then added to the membrane filter to retain the microbial dissolution solution for a given time on the hydrophobic membrane filter. Then, the microbial dissolution solution is dispensed to a reaction container containing a luminescent reagent, and luminescence is detected to detect the microbes.
US08679826B2
A method for recycling a paper product sized, coated, or both sized and coated with a polymer, including: pulping an aqueous wastepaper suspension including a paper product in the presence of a hydrolase, the paper product being a paper product sized and/or coated with a polyester to obtain an aqueous solution, which is a waste paper suspension including a mixture of paper fibers and the polyester, and separating the polyester from the wastepaper suspension to recycle the paper fibers of the paper product, wherein the polyester is a polyester having a melt flow rate according to EN ISO 1133 (190° C., 2.16 kg weight) of from 2 to 50 cm3/10 min, and the hydrolase includes at least one of a carboxyesterase [3.1.1.1], a lipase [3.1.1.3], and a cutinase [3.1.1.74].
US08679821B2
Compositions and methods for protection against bacterial contamination are disclosed Antibacterial proteins and methods of use thereof are also disclosed.
US08679819B2
The invention provides cells useful to propagate influenza virus mutants having reduced sialidase activity.
US08679817B2
Described herein are variants of H. jecorina CBH I, a Cel7 enzyme. The present invention provides novel cellobiohydrolases that have improved thermostability and reversibility.
US08679816B2
The present disclosure relates to cellulase variants. In particular the present disclosure relates to cellulase variants having improved expression, activity and/or stability. Also described are nucleic acids encoding the cellulase variants, compositions comprising the cellulase variants, and methods of use thereof.
US08679815B2
The present invention relates to filamentous fungal host cells and particularly Trichoderma host cells useful for the production of heterologous granular starch hydrolyzing enzymes having glucoamylase activity.
US08679814B2
A method of preparing a cold adapted xylanase by use of recombinant DNA techniques. A nucleic acid and corresponding amino acid sequences of a cold adapted xylanase, isolated from antarctic marine origin, preferably from an Antarctic bacteria (Psychrobacter sp.) are provided. These can be used in a variety of industrial contexts and for a variety of commercial purposes including more complete hydrolysis of lignocellulosic biomass into simple sugars that can then be fermented to products, such as liquid fuels and chemical feedstocks. The enzymes are also useful in the production methods of other industries, such as the animal feed, baking, and paper industries. Nucleic acids, corresponding amino acid sequences, constructs, expression vectors or integration vectors containing the DNA molecule, and host cells comprising the polynucleotides as well as methods for producing and using the polypeptides for producing and using the Psychrobacter-derived cold adapted family GH10 xylanase-like protein are also described.
US08679811B2
The present invention generally relates to treatments involving glutaredoxins. In one aspect, systems and methods of the invention can be used to treat a subject having an oxidative stress condition, for example, airway inflammation or asthma. In some embodiments, a glutaredoxin may be used to treat a subject. Also provided in certain aspects of the present invention are kits for therapies involving glutaredoxins, methods for promoting such therapies, and the like.
US08679809B2
A method has been developed to produce stable cell-matrix microspheres with up to 100% encapsulation efficiency and high cell viability, using matrix or biomaterial systems with poor shape and mechanical stability for applications including cell therapeutics via microinjection or surgical implantation, 3D culture for in vitro expansion without repeated cell splitting using enzymatic digestion or mechanical dissociation and for enhanced production of therapeutic biomolecules, and in vitro modeling for morphogenesis studies. The modified droplet generation method is simple and scalable and enables the production of cell-matrix microspheres when the matrix or biomaterial system used has low concentration, with slow phase transition, with poor shape and mechanical stability.
US08679807B2
There is provided a method for covalent immobilization of at least one molecule comprising at least one amino group, said method comprising the sequential steps of: a) providing a surface comprising —SH groups, b) oxidizing the surface comprising —SH groups using redox reactions in the presence of noble metal ions, and c) contacting the surface with at least one molecule comprising at least one amino group to obtain a covalent binding of the at least one molecule to the surface, wherein said at least one amino group is involved in obtaining said covalent bond. The immobilized molecules are immobilized via stable covalent bonds. The method is more versatile since it can be performed as a one step method. All reaction steps are performed in aqueous solution. All steps can be performed at room temperature. The chemicals used are less expensive and less toxic compared to the prior art.
US08679804B2
The present invention relates to a modified yeast strain which is prepared by introducing a vector that expresses HMG-CoA reductase (hydroxymethylglutaryl CoA reductase) and farnesyl pyrophosphate synthase, and a method for producing squalene using the same. More particularly, the present invention relates to Saccharomyces cerevisiae Y2805 modified yeast strain that is transformed with a vector including the HMG1 gene, and ispA or Erg20 gene, and a method for producing squalene with high efficiency by culturing the modified yeast strain.
US08679803B2
The present invention is directed to the enhanced production of ethanol from fermentation using an ethanol producing microorganism. In particular, the present invention provides a process for the enhanced growth and metabolism of an ethanol producing microorganism (e.g., yeast), for the purpose of increasing or enhancing ethanol production, both in terms of total ethanol produced and in terms of the time required for ethanol producing microorganisms to convert carbohydrates and/or sugars to end products (i.e., ethanol). In accordance with this invention bicarbonate ions are used to enhance ethanol fermentation and/or reduce the time required for ethanol producing microorganisms to convert carbohydrates and/or sugars to end products, i.e., ethanol. The present invention can also be used for enhancing fermentation end products in, for example, the fuel ethanol, industrial, cheese, brewing, and wine making industries.
US08679800B2
The present invention provides: a lactic acid-producing Escherichia coli comprising at least one gene of a sucrose non-PTS gene group, including at least a sucrose hydrolase gene, provided that a combination of a repressor protein (cscR), a sucrose hydrolase (cscA), a fructokinase (cscK) and a sucrose permease (cscB) and a combination of a sucrose hydrolase (cscA), a fructokinase (cscK) and a sucrose permease (cscB) are excluded, wherein the lactic acid-producing Escherichia coli comprises a lactic acid production enhancing system provided by genetic recombination; and a lactic acid production method including producing lactic acid from a plant-derived sucrose-containing raw material by using the lactic acid-producing Escherichia coli.
US08679797B2
The present invention provides a method for extracting glucan and mannan from the cell wall of a microorganism. Specifically, the method of the present invention in one embodiment comprises the steps of: a) treating the cells of the microorganism with an alkaline protease and an mannanase; b) separating the mixture from step a) into a heavy phase and a light phase; c) drying the heavy phase obtained from step b), obtaining the glucan preparation; and d) drying the light phase obtained from step b), obtaining the mannan preparation. Optionally, in the step c), the heavy phase obtained from step b) may be treated sequentially with an alkali and an acid, and separated again into a heavy phase and a light phase. The heavy phase is dried, obtaining the glucan preparation. The present invention further relates to the glucan preparation and mannan preparation produced thereby, and the uses thereof.
US08679795B2
The present invention relates to polypeptides having xylanase activity and nucleic acid sequences encoding such polypeptides. The invention also relates to nucleic acid constructs, vectors, and host cells comprising the nucleic acid constructs as well as methods for producing and using the polypeptides. One specific application of the xylanase is the selective hydrolysis of pentose sugar components of hemicellulose-containing plant biomass. The nucleotide sequence may be used for the production of the xylanase or optimized mutants thereof.
US08679789B2
This invention relates to oligonucleotides comprising a molecular switch which may exist in an “open” or “closed” position. The molecular switch portion of the probe is particularly sensitive to the identity of sequences complementary to the molecular switch. Oligonucleotides containing a molecular switch are applicable to all kinds of hybridization processes. Due to the sensitivity of the switch domain of the oligonucleotide, probes containing a molecular switch are particularly useful in the identification of single point mismatches. More specifically, a portion, but not all, of the oligonucleotide becomes unbound from a mismatched target. The invention further relates to methods of using said oligonucleotides for research reagents, and clinical diagnostics. An exemplary oligonucleotide comprises a first hybridizable domain, a second bridging block domain, and a third binding domain.
US08679782B2
The invention relates to production of triacylglycerols in cells.
US08679781B2
The invention provides a method for making in vitro peptide expression libraries, and for the isolation of nucleotide sequences encoding peptides of interest, wherein the peptides or proteins are specifically associated with the DNA encoding them through non-covalent protein:DNA binding. The method describes ways of making the library itself, DNA molecules encoding the library and uses of the expression library.
US08679779B2
The present invention relates to a method of forming an implantable medical device comprising: culturing polymer-producing bacteria preferably Acetobacter xylinum in the presence of a degradable support; and removing the degradable support to recover an implant having pores of a configuration determined at least in part by the configuration of the degradable support. The invention also relates to a medical device obtained by such a method.
US08679768B2
The present inventors screened peptides having a specific sequence specifically binding to amyloid-beta antibody and accordingly confirmed that Aβ22(pE)-42 peptide showed higher reactivity to amyloid-beta antibody in serum of Alzheimer's disease patients. Therefore, the said Aβ22(pE)-42 peptide can be used as an active ingredient for the kit for diagnosing dementia and thus it can be said that the peptide can be effectively used for the diagnosis of dementia whose early diagnosis is hardly possible.
US08679767B2
Methods are disclosed to detect, characterize, measure, and quantitate human and humanized antibodies, and their conjugates, present in pre-clinical animal biological samples, including plasma/serum and tissue samples.
US08679758B2
The presently claimed invention provides for novel methods and kits for analyzing a collection of target sequences in a nucleic acid sample. A sample is amplified under conditions that enrich for a subset of fragments that includes a collection of target sequences. The invention further provides for analysis of the above sample by hybridization to an array, which may be specifically designed to interrogate the collection of target sequences for particular characteristics, such as, for example, the presence or absence of one or more polymorphisms.
US08679757B2
This disclosure relates to methods of determining the presence and position of AGG or interruptor elements within a trinucleotide (for example, CGG) repeat region, and to methods of determining the number of repeats present in this region, by amplifying a set of products with a set of primers of which at least one comprises a portion of the CGG repeat region, and resolving the products to produce a representation of product size and abundance.
US08679748B2
This disclosure features, inter alia, methods for determining at least one property of a nucleic acid. The methods include: (a) fixing the nucleic acid on a planar surface; (b) digesting the nucleic acid into fragments with at least one enzyme; (c) imaging the nucleic acid; and (d) analyzing the imaged nucleic acid to determine the property of the nucleic acid, wherein no internal nucleic acid standard is added during the method.
US08679744B2
The present invention relates to a method for cleaning and isolating nucleic acids using cationic detergents with the general formula (I): Y+R1R2R3R4X− (I) where Y can represent nitrogen or phosphorus R1, R2, R3 and R4 can represent independently from one another an unbranched or branched C1-C20-alkyl residue, C3-C6-alkenyl residue, C3-C6-alkinyl residue and/or a C6-C20-aryl residue as well as a C6-C26-aralkyl residue, and X— can represent an anion of an inorganic or organic single or multi-basic acid.
US08679743B2
This document relates to the activity of interferon regulatory factor 4 (IRF4) in T-cell lymphomas. For example, methods and materials involved in reducing the expression of an IRF4 polypeptide in T-cell lymphoma cells and identifying agents having the ability to reduce expression of an IRF4 polypeptide in T-cell lymphoma cells are provided. This document also relates to reducing DUSP22 or FLJ43663 polypeptide activity in T-cell lymphomas. For example, methods and materials involved in reducing the expression of DUSP22 polypeptides and/or FLJ43663 polypeptides in T-cell lymphoma cells and identifying agents having the ability to reduce expression of DUSP22 polypeptides and/or FLJ43663 polypeptides in T-cell lymphoma cells are provided.
US08679741B2
Provided herein are methods, compositions and kits to extract and relatively enrich by physical separation or amplification short base pair nucleic acid in the presence of a high background of genomic material (e.g., host or maternal nucleic acids).
US08679739B2
A method for diagnostic analysis, in particular to identify pathogens, such as viruses, bacteria or other micro-organisms present in a biological sample, comprises a first step of measuring and continuously monitoring the turbidity and/or the concentration of the pathogens, by means of an instrumental reading technique, of a liquid culture medium into which the sample to be analyzed has been inoculated and in which the replication of the pathogens possibly present occurs, said measuring and monitoring being carried out dynamically during the replication of the pathogens growing in the culture medium; and a second step of identifying the pathogens, carried out by taking at least an aliquot of the liquid culture medium containing the biological sample directly obtained from the first step, which has reached a desired value of turbidity according to a standardized value scale, such as the McFarland turbidity scale, and/or of concentration of the pathogens, and using said aliquot directly in mass spectrophotometric identification means (15) in order to identify the pathogens, which means are calibrated in their functioning depending on the measurement results of the first step. The desired values of turbidity and/or of concentration of the pathogens are preliminarily selected, during the first step, on the basis of the specific needs which, on each occasion, are identified in order to carry out the second identification step.
US08679737B2
A microfluid device for producing diffusively built gradients comprising a bottom plate and a cover plate, wherein the cover plate has recesses and is connected to the bottom plate in a liquid-tight manner so that the recesses form at least two reservoirs and one observation chamber, which connects the reservoir, a reservoir can be filled particularly through an inlet/outlet through the cover plate, and the cross-sectional surface of the observation chamber is at least 5 times, preferably at least 200 times smaller at the aperture of the observation chamber into one of the reservoirs than the maximum cross-sectional surface of the reservoir in parallel to this cross-sectional surface of the observation chamber.
US08679730B2
The invention relates azide functionalized poly(3-hexylthiophene)s. Various azide functionalized poly(3-hexylthiophene)s and intermediates are disclosed and described, as well as method for making novel monomers that are synthesized and transformed into P3HT-Nmp for use as organic conducting polymers in organic photovoltaic devices.
US08679726B2
Negative-working lithographic printing plate precursor a negative-working imagable layer and an outermost water-soluble overcoat layer that is disposed directly on the negative-working imagable layer. The outermost water-soluble overcoat layer comprises: (1) one or more film-forming water-soluble polymeric binders, and (2) organic wax particles dispersed therein. The organic wax particles have an average largest dimension of at least 0.05 μm and up to and including 0.7 μm, as determined from a scanning electron micrographic of the dried outermost water-soluble overcoat layer. Useful organic wax particles include fluorinated or non-fluorinated hydrocarbon wax particles.
US08679705B2
An electrode for fuel cells including a catalyst layer containing a benzoxazine monomer, a catalyst and a binder, and a fuel cell employing the electrode. The electrode for the fuel cells contains an even distribution of benzoxazine monomer, which is a hydrophilic (or phosphoric acidophilic) material and dissolves in phosphoric acid but does not poison catalysts, thereby improving the wetting capability of phosphoric acid (H3PO4) within the electrodes and thus allowing phosphoric acid to permeate first into micropores in electrodes. As a result, flooding is efficiently prevented. That is, liquid phosphoric acid existing in large amount within the electrodes inhibits gas diffusion which; this flooding occurs when phosphoric acid permeates into macropores in the electrodes. This prevention of flooding increases the three-phase interfacial area of gas (fuel gas or oxidized gas)-liquid (phosphoric acid)-solid (catalyst). Therefore, the fuel cell employing the electrode can operate under conditions of high-temperature and a dry environment and demonstrate improved cell performance.
US08679701B2
A liquid electrolyte fuel cell comprises means to define an electrolyte chamber, and electrodes on opposite sides of the electrolyte chamber. The electrode comprises an electrically conductive sheet (10) through which are defined a multiplicity of through-pores or holes (14). These may be formed by laser drilling through the sheet. The electrode would normally also include a layer (16) of catalytic material. The margin (15) of the sheet is not perforated or porous, to simplify sealing.