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发明公开
CN101005011A 等离子体处理装置 失效 - 权利终止

等离子体处理装置
摘要：
在微波等离子体处理装置中，通过使正对被处理基片的喷盘或等离子体透过窗的、正对所述被处理基片的一侧成凹面状，从而，与所述被处理基片表面一致的平面和所述内表面之间的间隔沿着所述微波透过窗的径向向外呈多阶梯形地减小，由此来补偿被处理基片周围部分中的等离子体密度的降低。其结果，即使在进行蚀刻等低压下的等离子体处理时，也能在被处理基片表面附近维持稳定均匀的等离子体。此外，通过所述结构，还可以促进等离子体的点火。
摘要（英）：

In a microwave plasma-processing device, a shower plate or plasma penetration window opposed to a board to be processed is recessed on the side opposed to the board to be processed, whereby a decrease in plasma density in the peripheral region of the board to be processed is compensated. As a result, even when plasma processing at low pressure, such as etching, is effected, stabilized uniform plasma is maintained in the vicinity of the surface of the board to be processed. Further, such arrangement enhances ignition of plasma.

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