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发明公开
CN101133364A 抗蚀剂下层膜用组合物及其制造方法 有权 复审申请

抗蚀剂下层膜用组合物及其制造方法
摘要：
本发明的课题是提供一种抗蚀剂下层膜用组合物，可形成与抗蚀剂膜的密合性优异，提高抗蚀剂图案再现性和对在显影等中使用的碱液及除去抗蚀剂时的氧灰化具有耐受性的抗蚀剂下层膜，并且该组合物保存稳定性优异。本发明涉及的抗蚀剂下层膜用组合物的特征在于含有下述通式(A)表示的硅烷化合物的水解物和/或其缩合物。Rb1Rc2Si(OR3)4－a...(A)[式中，R1表示具有至少一个不饱和键的1价有机基团，R2独立地表示氢原子、卤素原子或1价的有机基团，R3独立地表示1价有机基团，R1为OR3基以外的基团，a表示1～3的整数，b表示1～3的整数，c表示0～2的整数，且a＝b+c]。
摘要（英）：

A composition for a resist underlayer film is provided. The composition has excellent storage stability and can form a resist underlayer film which has excellent adhesion to a resist film, can improve reproducibility of a resist pattern and is resistant to an alkaline liquid used in development and to oxygen ashing during the removal of a resist. The composition comprises a hydrolyzate and/or a condensate of a silane compound of the following formula (A), R<1>bR<2>cSi(OR<3>)[4-a]?- (A), wherein R<1> is a monovalent organic group having at least one unsaturated bond, R<2> individually represents a hydrogen atom, a halogen atom or a monovalent organic group, R 3 individually represents a monovalent organic group, R<1> is a group other than OR<3>, a is an integer of 1 to 3, b is an integer of 1 to 3, and c is an integer of 0 to 2, provided that a=b+c.

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