The invention relates to a maintenance method of plasma etching equipment, the corresponding relationship of the performance parameters of the products of the plasma etching equipment and the roughness of the inner surface of a reaction cavity body of the plasma etching equipment is firstly established; the performance parameters of the products of the plasma etching equipment are detected, the roughness of the inner surface of the reaction cavity body is judged whether to meet the process requirements according to the corresponding relationship, the reaction cavity body is replaced when the roughness does not meet the requirements. The replacement time of a vulnerable part of the plasma etching equipment can be predicted accurately relatively by the method, so as to replace the vulnerable part of the plasma etching equipment in time, ensure the processing quality of a silicon wafer, maintain the normal process of the silicon wafer, save the time and improve the efficiency.