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发明授权
CN101246942B 发光二极管和激光器制作方法及发光二极管和激光器 失效 - 权利终止

发光二极管和激光器制作方法及发光二极管和激光器
摘要：
一种发光二极管和激光器制作方法及发光二极管和激光器，方法是将发光二极管和激光器直接外延生长在单晶硅薄膜石英衬底上或外延生长在沉积有缓冲层的单晶硅薄膜石英衬底上。半导体发光二极管结构有与石英衬底键合单晶硅薄膜；形成在石英衬底上的单晶硅电极层；外延生长在单晶硅电极层上的LED的N层；位于LED的N层上的LED发光层；位于LED的发光层上的LED的P层；形成在P层上的LED顶部电极。半导体激光器结构有与石英衬底键合单晶硅薄膜；形成在石英衬底上的单晶硅电极层；外延生长在单晶硅电极层上的LD的N层；位于LD的N层之上的LD的有源层；位于LD的有源层之上的LD的P层；形成在LD的P层之上的LD的顶部电极。本发明可实现LED和LD器件的底发光，可提高LED和LD的发光效率。
摘要（英）：

The present invention provides a LBD, a laser and a producing method thereof. Epitaxial growth of LBD and laser on single crystal silicon film quartz substrate or single crystal silicon film quartz substrate deposited buffer layer. Semiconductor LBD structure comprises of single crystal silicon film bonded quartz substrate, single silicon film electrode layer formed on quartz substrate, N layer epitaxial grown on LED of single silicon electrode layer and LED top electrode formed on P layer. Semiconductor laser structure comprises of single crystal silicon bonded quartz substrate, single crystal silicon electrode layer formed on quartz substrate, N layer epitaxial grown on LD of single crystal silicon electrode layer, active layer of LD on N layer, P layer of LD on LD active layer and top electrode of LD on P layer of LD. The present invention can realize bottom luminescence of LED and LD elements, improve luminescence efficiency of LED and LD.

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