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发明公开
CN101277580A 基板的等离子处理装置以及等离子处理方法 有权 转让

基板的等离子处理装置以及等离子处理方法
摘要：
本发明提供一种在平行平板型等离子处理装置中具有适于基板加工的离子能量，还可使该离子能量宽度减小来精细控制加工形状的基板的等离子处理装置以及等离子处理方法。等离子处理装置构成为包括：内部保持真空的室；配置于其内部、并构成为在主面上保持要处理的基板的RF电极；以及与该RF电极相对配置的对置电极；用于对所述RF电极外加规定频率的RF电压的RF电压外加装置；以及用于对所述RF电极外加规定的脉冲电压以便其与所述RF电压叠加的脉冲电压外加装置。所述脉冲电压外加装置具有调整所述脉冲电压的所述外加的定时、并设定不外加所述脉冲电压的停止时间的控制机构。
摘要（英）：

A plasma processing apparatus and a plasma processing method includes a chamber of which an interior is evacuated under a predetermined vacuum condition; an RF electrode which is disposed in the chamber and configured so as to hold a substrate to be processed on a main surface thereof; an opposing electrode which is disposed opposite to the RF electrode in the chamber; an RF voltage applying device for applying an RF voltage with a predetermined frequency to the RF electrode; and a pulsed voltage applying device for applying a pulsed voltage to the RF electrode so as to be superimposed with the RF voltage and which includes a controller for controlling a timing in application of the pulsed voltage and defining a pause period of the pulsed voltage.

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