The present invention provides a method for improving non-crystal hatching layer in high-speed deposition microcrystal silicon material, and discloses a method for improving the initial non-crystal hatching layer in high-speed deposition intrinsic microcrystal silicon film, wherein the method comprises the following steps: placing a substrate into a vacuum chamber, adopting a plasma reinforcing chemical vapor deposition or hot filament chemical vapor deposition technique for depositing a high-speed intrinsic microcrystal silicon film; and adopting a method of changing the heating temperature in deposition process for changing the migration capability of reaction precursor on the surface of substrate for furthermore changing the non-crystal hatching layer at the beginning period of high-speed material. The invention has a beneficial effect that the control to the migration time of reaction precursor on the surface of substrate is obtained through changing the heating temperature when the high-speed microcrystal silicon material is changed. Furthermore the effect of improving the thickness of non-crystal silicon hatching layer of material is obtained.