The present disclosure provides a PMOS device and method of fabricating the semiconductor device. The method includes forming a high-k dielectric layer over a semiconductor substrate, forming a capping layer over the high-k dielectric layer, forming a metal layer over the capping layer, forming a semiconductor layer over the metal layer, performing an implantation process on the semiconductor layer, the implantation process using a species including F, and forming a gate structure from the plurality of layers including the high-k dielectric layer, capping layer, metal layer, and semiconductor layer. The invention can increase the performance and reliability of the semiconductor device with NMOS and PMOS, easily be integrated with the current CMOS technology and semiconductor device and suitable and easy for the current semiconductor technology using the implantation process of the species including F and the annealing process for performing the activation.