The invention is used in the technical field of semiconductor photoelectron information, specifically relates to a jogging element-based infrared detector for modulating GaN HEMT (High Electron Mobility Transistor) channel current. The infrared detector is characterized by orderly comprising a GaN/AlGan HEMT device, a jogging element, a light wave absorption auxiliary layer, a gas-filled chamber, a substrate, a light wave absorption gas and a window layer. The jogging element is connected with the HEMT channel, after the light wave absorption gas in the gas-filled chamber and the light wave absorption auxiliary layer absorb the light wave, the gas-filled chamber deforms, the deformation drives the jogging element to move, and the movement of the jogging element induces the variation of the GaN HEMT channel current, thus, a light wave signal is converted into an electric signal to be detected. According to the invention, high sensitivity and high reliability of a GaN-based electro-mechanical coupling infrared detector are realized.