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发明公开
CN102645847A 测量方法、测量设备、光刻设备及器件制造方法 无效 - 撤回

测量方法、测量设备、光刻设备及器件制造方法
摘要：
本发明公开了一种测量方法、测量设备、光刻设备以及器件制造方法。设备(AS)测量光刻衬底(W)上的标记(202)的位置。测量光学系统包括用于使用辐射斑(206)照射标记的照射子系统(504)和用于检测被所述标记衍射的辐射的检查子系统(580)。衬底和测量光学系统相对于彼此以第一速度(vW)的移动以便扫描所述标记，同时同步地以第二速度(VSPOT)相对于测量光学系统的参照框架(RF)移动辐射斑。辐射斑以第三速度(VEFF)扫描标记，第三速度低于第一速度以便允许获得更多的时间来用于精确的位置测量。在一个实施例中，物镜(524)相对于参照框架保持固定，同时移动光学元件(562)施加辐射斑相对于参照框架的移动。
摘要（英）：

The present invention discloses a measuring method, a measuring device, a lithographic device and a device Manufacturing Method. An apparatus (AS) measures positions of marks (202) on a lithographic substrate (W). A measurement optical system comprises illumination subsystem (504) for illuminating the mark with a spot of radiation (206) and a detecting subsystem (580) for detecting radiation diffracted by the mark. The substrate and the measurement optical system move relative to each other at a first speed (vW) so as to scan the marks, and the spot of radiation is simultaneously and synchronously moved relative to the reference framework (RF) of the measurement optical system at a second speed (VSPOT). The spot of radiation scans marks at a third speed (VEFF), and the third speed is lower than the first speed so as to obtain more time for accurate position measurement. In one embodiment, an objective lens (524) is fixed relative to a reference framework, and simultaneously an optical element (562) is moved to apply the moving of the spot of radiation relative to the reference framework.

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