The invention discloses a method for controlling quirk corrosion formative semi-conducting film thickness and a semiconductor structure. A measuring groove is formed at the first face of a semiconductor wafer, and a transparent protective layer is formed in the measuring groove, and therefore in the process of forming the semi-conducting film in follow-up corrosion, wafer material at the bottom portion of the measuring groove is corroded to show the transparent protective layer. Height difference of the transparent protective layer and the surface of the semi-conducting film is obtained according to a limited reference plane of the bottom portion of the transparent protective layer, current thickness of the semi-conducting film is obtained accurately according to depth of the measuring groove and the height difference, and therefore the semi-conducting film is obtained by further controlling corrosion parameter to corrode. Through the method for controlling quirk corrosion formative semi-conducting film thickness and the semiconductor structure, the problem that thickness of the semi-conducting film is difficult to monitor and measure caused by the semi-conducting wafer thickness error is overcome.