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发明授权
CN103811296B 关键尺寸控制系统 有权

关键尺寸控制系统
摘要：
本发明涉及一种关键尺寸控制系统以及等离子体处理装置，包括如第一温控装置和/或第二温控装置，第一温控装置与气体喷淋头接触，用于检测并调控气体喷淋头的温度，第二温控装置与接地环接触，用于检测并调控接地环的温度；以及控制单元，对应于第一温控装置和/或第二温控装置而生成如下控制信号中的至少一种：第一控制信号，用于控制第一温控装置调节气体喷淋头的温度；第二控制信号，用于控制第二温控装置调节接地环的温度。其通过对气体喷淋头和接地环的温度控制，实现了对晶圆不同区域的关键尺寸的调控，实现代价小，易于扩展应用。
摘要（英）：

The invention relates to a critical size control system and a plasma processing device. The critical size control system comprises a first temperature control device and/ or a second temperature control device and a control unit; the first temperature control device which is in contact with a gas spraying head is used for detecting, adjusting and controlling the temperature of the gas spraying head; the second temperature control device which is in contact with a grounding ring is used for detecting, adjusting and controlling the temperature of the grounding ring; the control unit which is corresponding to the first temperature device and /or the second temperature control device generates at least one type of the following control signals which comprise a first control signal which is used for controlling the first temperature control device to adjust the temperature of the gas spraying head and a second control signal which is used for controlling the second temperature device to adjust the temperature of the grounding ring. The critical size control system has the advantages of achieving adjusting and controlling of the critical size of different areas of wafers and being low in achieving costs and easy to expand and apply due to the temperature control of the gas spraying head and the grounding ring.

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