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发明公开
CN104134686A 基于补偿结构的超结结构半导体器件 失效 - 权利终止

基于补偿结构的超结结构半导体器件
摘要：
本发明公开了一种形成于超结结构器件中半导体部分中的超结结构。该超结结构包括具有第一导电型的第一补偿层和具有互补的第二导电型的第二补偿层的补偿结构。该补偿结构对补偿沟槽的至少侧壁部分加衬，补偿沟槽沿垂直于该半导体部分的第一表面的垂直方向延伸。在该超结结构和邻接该超结结构的基座层中，横向补偿率的符号沿该垂直方向变化导致局部垂直电场梯度峰值并从而改进雪崩强度。
摘要（英）：

The invention discloses a super junction structure that is formed in a semiconductor portion of a super junction semiconductor device. The super junction structure includes a compensation structure with a first compensation layer of a first conductivity type and a second compensation layer of a complementary second conductivity type. The compensation structure lines at least sidewall portions of compensation trenches that extend between semiconductor mesas along a vertical direction perpendicular to a first surface of the semiconductor portion. Within the super junction structure and a pedestal layer that may adjoin the super junction structure, a sign of a lateral compensation rate changes along the vertical direction, results in a local peak of a vertical electric field gradient, and improves avalanche ruggedness.

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