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发明公开
CN106128935A 一种改善镍退火机台晶圆均一性的方法 无效 - 驳回

一种改善镍退火机台晶圆均一性的方法
摘要：
本发明提供了一种改善镍退火机台晶圆均一性的方法，包括：第一步骤：在硅片表面生长镍金属沉积物以制造镍金属控片；第二步骤：由待监控的退火机台对镍金属控片进行第一次退火；第三步骤：测量镍金属控片第一次退火后的电阻值以检验镍金属控片的相变程度；第四步骤：根据所述电阻值检验出的相变程度获取反馈值，并采用所述反馈值来优化退火机台的机台参数；第五步骤：在优化退火机台的机台参数之后，由待监控的退火机台对镍金属控片进行第二次退火，以得到最终的金属硅化物。
摘要（英）：

The invention provides a method for improving wafer uniformity of a nickel annealing machine table. The method comprises the following steps of 1, growing a nickel metal sediment on a surface of a silicon wafer to fabricate a nickel metal control sheet; 2, performing first annealing on the nickel metal control sheet by the annealing machine table to be monitored; 3, measuring a resistance value of the nickel metal control sheet after the first annealing to detect the phase change degree of the nickel metal control sheet; 4, acquiring a feedback value according to the phase change degree detected through the resistance value, optimizing a machine table parameter of the annealing machine table according to the feedback value; and 5, performing second annealing on the nickel metal control sheet by the annealing machine table to be monitored after the machine table parameter of the annealing machine table is optimized so as to obtain a final metal silicide.

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