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CN106282974A 等离子化学气相沉积装置 有权

等离子化学气相沉积装置
摘要：
等离子化学气相沉积装置包括腔室(12)、具有伸长形状的第一导体(20)、具有管状形状的第二导体(30)、高频输出装置(45)和直流电源的第一连接部(23)以及第一导体(20)的与直流电源(46)连接的第二连接部(24)均被放置在腔室(12)的外侧。从第一导体(20)的一端到第一连接部(23)的距离短于从第一导体(20)的所述一端到第二连接部(24)的距离。在第一导体(20)中在第一连接部(23)和第二连接部(24)之间设置阻抗变化部(25)，阻抗变化部具有的阻抗不同于在第一导体(20)的所述一端与第一连接部(23)之间的阻抗。(46)。第一导体(20)的与高频输出装置(45)连接
摘要（英）：

A plasma chemical vapor deposition device includes a chamber (12), a first conductor (20) having an elongated shape, a second conductor (30) having a tubular shape, a high-frequency output device (45), and a direct-current power supply (46). A first connecting portion (23) of the first conductor (20) with the high-frequency output device (45) and a second connecting portion (24) of the first conductor (20) with the direct-current power supply (46) are both placed outside the chamber (12). A distance from one end of the first conductor (20) to the first connecting portion (23) is shorter than a distance from the one end of the first conductor (20) to the second connecting portion (24). An impedance change portion (25) is provided between the first connecting portion (23) and the second connecting portion (24) in the first conductor (20), the impedance change portion having an impedance different from an impedance between the one end of the first conductor (20) and the first connecting portion (23).

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