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发明授权
CN107039276B 半导体器件及其形成方法 有权

半导体器件及其形成方法
摘要：
半导体器件包括衬底、至少一个半导体鳍和至少一个外延结构。半导体鳍存在于衬底上。半导体鳍上具有至少一个凹槽。外延结构存在于半导体鳍的凹槽中。外延结构的最顶位置的n‑型杂质浓度低于位于最顶位置下方的外延结构的位置的n‑型杂质浓度。本发明的实施例还涉及半导体器件的形成方法。
摘要（英）：

A semiconductor device includes a substrate, at least one semiconductor fin, and at least one epitaxy structure. The semiconductor fin is present on the substrate. The semiconductor fin has at least one recess thereon. The epitaxy structure is present in the recess of the semiconductor fin. A topmost location of the epitaxy structure has an n-type impurity concentration lower than an n-type impurity concentration of a location of the epitaxy structure below the topmost location.

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