The present invention provides a trench gate type semiconductor device that reduces the feedback capacitance generated at the bottom of the trough. The semiconductor device has a drift region (10); the base region (20), its configuration in the drift region (10); the emission region (30), its configuration in the base region (20); the inner wall of the insulating film (40), the configuration in the tank wall, the groove from the emitter region (30) on the surface and extends through the launch area (30) and the base (20); a gate electrode (50), and the base region (20) side of the insulating film on the inner wall of the side of the groove in the allocation of land (40); the bottom surface of the electrode (150), and the gate electrode (50) insulation the separation configuration of bottomgroove of the inner wall of the insulating film (40); and an interlayer insulating film (70), (50) arranged on the gate electrode and the bottom electrode (150) between the gate electrode (50), fromthe surface to at least a portion of the slot The distance between the bottom and the bottom is longer than at least a part of the lower surface of the bottom surface electrode (150) to the bottom ofthe groove.